DE69416767T2 - Verfahren zur Herstellung eines Si-O beinhaltenden Überzuges - Google Patents

Verfahren zur Herstellung eines Si-O beinhaltenden Überzuges

Info

Publication number
DE69416767T2
DE69416767T2 DE69416767T DE69416767T DE69416767T2 DE 69416767 T2 DE69416767 T2 DE 69416767T2 DE 69416767 T DE69416767 T DE 69416767T DE 69416767 T DE69416767 T DE 69416767T DE 69416767 T2 DE69416767 T2 DE 69416767T2
Authority
DE
Germany
Prior art keywords
coating
silsesquioxane resin
hydrogen silsesquioxane
hydrogen
hydrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69416767T
Other languages
German (de)
English (en)
Other versions
DE69416767D1 (de
Inventor
David Stephen Ballance
Robert Charles Camilletti
Diana Kay Dunn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69416767D1 publication Critical patent/DE69416767D1/de
Application granted granted Critical
Publication of DE69416767T2 publication Critical patent/DE69416767T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paper (AREA)
DE69416767T 1993-09-22 1994-09-16 Verfahren zur Herstellung eines Si-O beinhaltenden Überzuges Expired - Fee Related DE69416767T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/124,529 US5441765A (en) 1993-09-22 1993-09-22 Method of forming Si-O containing coatings

Publications (2)

Publication Number Publication Date
DE69416767D1 DE69416767D1 (de) 1999-04-08
DE69416767T2 true DE69416767T2 (de) 1999-11-11

Family

ID=22415405

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416767T Expired - Fee Related DE69416767T2 (de) 1993-09-22 1994-09-16 Verfahren zur Herstellung eines Si-O beinhaltenden Überzuges

Country Status (7)

Country Link
US (2) US5441765A (enExample)
EP (1) EP0647965B1 (enExample)
JP (2) JP3701700B2 (enExample)
KR (1) KR100300801B1 (enExample)
CA (1) CA2117593A1 (enExample)
DE (1) DE69416767T2 (enExample)
TW (1) TW297786B (enExample)

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EP0686680A4 (en) 1993-12-27 1996-07-24 Kawasaki Steel Co INSULATING FILM FOR SEMICONDUCTOR DEVICES, COATING FLUID USED TO FORM THE FILM, AND PROCESS FOR PRODUCING SAID FILM
US5534731A (en) * 1994-10-28 1996-07-09 Advanced Micro Devices, Incorporated Layered low dielectric constant technology
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5656555A (en) * 1995-02-17 1997-08-12 Texas Instruments Incorporated Modified hydrogen silsesquioxane spin-on glass
US6652922B1 (en) 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
JP3760493B2 (ja) * 1995-09-21 2006-03-29 東亞合成株式会社 固体状シリカ誘導体およびその製造方法
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
KR100202231B1 (ko) * 1996-04-08 1999-06-15 구자홍 액정표시장치의 제조방법 및 액정표시장치의 구조
TW408192B (en) * 1996-10-02 2000-10-11 Winbond Electronics Corp Method for forming a film over a spin-on-glass layer by means of plasma-enhanced chemical-vapor deposition
US5973385A (en) * 1996-10-24 1999-10-26 International Business Machines Corporation Method for suppressing pattern distortion associated with BPSG reflow and integrated circuit chip formed thereby
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
US5866945A (en) * 1997-10-16 1999-02-02 Advanced Micro Devices Borderless vias with HSQ gap filled patterned metal layers
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6420278B1 (en) * 1998-06-12 2002-07-16 Advanced Micro Devices, Inc. Method for improving the dielectric constant of silicon-based semiconductor materials
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
US6436824B1 (en) 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6764809B2 (en) 2000-10-12 2004-07-20 North Carolina State University CO2-processes photoresists, polymers, and photoactive compounds for microlithography
JP3913638B2 (ja) * 2001-09-03 2007-05-09 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US7368804B2 (en) * 2003-05-16 2008-05-06 Infineon Technologies Ag Method and apparatus of stress relief in semiconductor structures
JP4796498B2 (ja) * 2003-05-23 2011-10-19 ダウ コーニング コーポレーション 高い湿式エッチング速度を持つシロキサン樹脂系反射防止被覆組成物
US7151315B2 (en) * 2003-06-11 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of a non-metal barrier copper damascene integration
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
DE602005008100D1 (de) 2004-12-17 2008-08-21 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
CN101371196B (zh) 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
WO2009088600A1 (en) 2008-01-08 2009-07-16 Dow Corning Toray Co., Ltd. Silsesquioxane resins
CN101910253B (zh) * 2008-01-15 2013-04-10 陶氏康宁公司 倍半硅氧烷树脂
JP5581225B2 (ja) * 2008-03-04 2014-08-27 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
CN101970540B (zh) * 2008-03-05 2014-07-23 陶氏康宁公司 倍半硅氧烷树脂
EP2373722A4 (en) 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
EP2376584B1 (en) * 2008-12-10 2014-07-16 Dow Corning Corporation Wet-etchable antireflective coatings
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
TWI521248B (zh) 2014-08-07 2016-02-11 光興國際股份有限公司 光學收發器
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング

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US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US3943014A (en) * 1974-02-07 1976-03-09 Sanken Electric Company Limited Process for the fabrication of silicon transistors with high DC current gain
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4999397A (en) * 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
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US5063267A (en) * 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
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US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
US5468561A (en) * 1993-11-05 1995-11-21 Texas Instruments Incorporated Etching and patterning an amorphous copolymer made from tetrafluoroethylene and 2,2-bis(trifluoromethyl)-4,5-difluoro-1,3-dioxole (TFE AF)
US5471093A (en) * 1994-10-28 1995-11-28 Advanced Micro Devices, Inc. Pseudo-low dielectric constant technology

Also Published As

Publication number Publication date
DE69416767D1 (de) 1999-04-08
CA2117593A1 (en) 1995-03-23
JP2005320239A (ja) 2005-11-17
EP0647965A1 (en) 1995-04-12
TW297786B (enExample) 1997-02-11
US5441765A (en) 1995-08-15
JPH07187640A (ja) 1995-07-25
KR950008433A (ko) 1995-04-17
JP3701700B2 (ja) 2005-10-05
US5523163A (en) 1996-06-04
KR100300801B1 (ko) 2001-10-22
EP0647965B1 (en) 1999-03-03

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee