DE69807770T2 - Zusammensetzung und Verfahren zum Bilden von elektrisch isolierenden Dünnschichten - Google Patents

Zusammensetzung und Verfahren zum Bilden von elektrisch isolierenden Dünnschichten

Info

Publication number
DE69807770T2
DE69807770T2 DE69807770T DE69807770T DE69807770T2 DE 69807770 T2 DE69807770 T2 DE 69807770T2 DE 69807770 T DE69807770 T DE 69807770T DE 69807770 T DE69807770 T DE 69807770T DE 69807770 T2 DE69807770 T2 DE 69807770T2
Authority
DE
Germany
Prior art keywords
composition
electrically insulating
thin films
insulating thin
forming electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69807770T
Other languages
English (en)
Other versions
DE69807770D1 (de
Inventor
Akihiko Kobayashi
Katsutoshi Mine
Takashi Nakamura
Motoshi Sasaki
Kiyotaka Sawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Silicone Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14166109&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69807770(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dow Corning Toray Silicone Co Ltd filed Critical Dow Corning Toray Silicone Co Ltd
Publication of DE69807770D1 publication Critical patent/DE69807770D1/de
Application granted granted Critical
Publication of DE69807770T2 publication Critical patent/DE69807770T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Organic Insulating Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69807770T 1997-03-31 1998-03-30 Zusammensetzung und Verfahren zum Bilden von elektrisch isolierenden Dünnschichten Expired - Fee Related DE69807770T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09647697A JP3415741B2 (ja) 1997-03-31 1997-03-31 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法

Publications (2)

Publication Number Publication Date
DE69807770D1 DE69807770D1 (de) 2002-10-17
DE69807770T2 true DE69807770T2 (de) 2003-05-22

Family

ID=14166109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69807770T Expired - Fee Related DE69807770T2 (de) 1997-03-31 1998-03-30 Zusammensetzung und Verfahren zum Bilden von elektrisch isolierenden Dünnschichten

Country Status (7)

Country Link
US (2) US6074695A (de)
EP (1) EP0869516B1 (de)
JP (1) JP3415741B2 (de)
KR (1) KR19980080834A (de)
DE (1) DE69807770T2 (de)
SG (1) SG74621A1 (de)
TW (1) TW419750B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140558A (ja) * 1997-07-22 1999-02-12 Sony Corp 誘電体膜の製造方法
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
EP1083775B1 (de) * 1999-03-29 2010-10-13 Seiko Epson Corporation Zusammensetzung mit einem organischen elektrolumineszierenden Material
JP2001214127A (ja) 2000-01-31 2001-08-07 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
JP2001247819A (ja) * 2000-03-03 2001-09-14 Dow Corning Toray Silicone Co Ltd 電気絶縁性架橋薄膜形成性有機樹脂組成物、および電気絶縁性架橋薄膜の形成方法
JP2001291427A (ja) 2000-04-06 2001-10-19 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
US6605993B2 (en) 2000-05-16 2003-08-12 Fujitsu Limited Operational amplifier circuit
US6271273B1 (en) * 2000-07-14 2001-08-07 Shipley Company, L.L.C. Porous materials
WO2002031596A1 (en) 2000-10-12 2002-04-18 University Of North Carolina At Chapel Hill Co2-processes photoresists, polymers, and photoactive compounds for microlithography
US6740685B2 (en) * 2001-05-30 2004-05-25 Honeywell International Inc. Organic compositions
JP3886779B2 (ja) 2001-11-02 2007-02-28 富士通株式会社 絶縁膜形成用材料及び絶縁膜の形成方法
EP1466356A2 (de) * 2002-01-15 2004-10-13 Honeywell International Inc. Organische zusammensetzungen
JP4092220B2 (ja) * 2003-01-31 2008-05-28 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP2005268405A (ja) * 2004-03-17 2005-09-29 Dow Corning Toray Co Ltd 光学装置用金属ベース回路基板およびその製造方法
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
JP2009060007A (ja) * 2007-09-03 2009-03-19 Sekisui Chem Co Ltd シルセスキオキサン系絶縁膜の製造方法
US20100243960A1 (en) * 2007-11-16 2010-09-30 Sumitomo Chemical Company, Limited Coating solution for application method of discharging coating solution through slit-like discharge port
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS59189126A (ja) * 1983-04-13 1984-10-26 Fujitsu Ltd ポリジハイドロジエンシロキサンの製造方法
JPS6042426A (ja) * 1983-08-19 1985-03-06 Fujitsu Ltd ポリジハイドロジェンシロキサンの製法
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US5380553A (en) * 1990-12-24 1995-01-10 Dow Corning Corporation Reverse direction pyrolysis processing
US5840774A (en) * 1991-02-28 1998-11-24 Research Foundation Of State University Of New York Low density microporous polymers and process
US5238787A (en) * 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
JP3153367B2 (ja) * 1992-11-24 2001-04-09 ダウ・コ−ニング・コ−ポレ−ション ポリハイドロジェンシルセスキオキサンの分子量分別方法
US5548159A (en) * 1994-05-27 1996-08-20 Texas Instruments Incorporated Porous insulator for line-to-line capacitance reduction
US5618878A (en) * 1995-04-07 1997-04-08 Dow Corning Corporation Hydrogen silsesquioxane resin coating composition
TW367273B (en) * 1996-12-20 1999-08-21 Dow Corning Method of producing low dielectric ceramic-like materials

Also Published As

Publication number Publication date
KR19980080834A (ko) 1998-11-25
JPH10283843A (ja) 1998-10-23
EP0869516B1 (de) 2002-09-11
DE69807770D1 (de) 2002-10-17
US6149966A (en) 2000-11-21
TW419750B (en) 2001-01-21
JP3415741B2 (ja) 2003-06-09
US6074695A (en) 2000-06-13
EP0869516A1 (de) 1998-10-07
SG74621A1 (en) 2000-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee