DE69328985T2 - Gate-gesteuerte Diode und Verfahren zur Herstellung derselben - Google Patents

Gate-gesteuerte Diode und Verfahren zur Herstellung derselben

Info

Publication number
DE69328985T2
DE69328985T2 DE69328985T DE69328985T DE69328985T2 DE 69328985 T2 DE69328985 T2 DE 69328985T2 DE 69328985 T DE69328985 T DE 69328985T DE 69328985 T DE69328985 T DE 69328985T DE 69328985 T2 DE69328985 T2 DE 69328985T2
Authority
DE
Germany
Prior art keywords
making
same
gate controlled
controlled diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69328985T
Other languages
English (en)
Other versions
DE69328985D1 (de
Inventor
Tomohide Terashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69328985D1 publication Critical patent/DE69328985D1/de
Publication of DE69328985T2 publication Critical patent/DE69328985T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
DE69328985T 1992-03-30 1993-03-01 Gate-gesteuerte Diode und Verfahren zur Herstellung derselben Expired - Lifetime DE69328985T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4073709A JP2810821B2 (ja) 1992-03-30 1992-03-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69328985D1 DE69328985D1 (de) 2000-08-17
DE69328985T2 true DE69328985T2 (de) 2001-03-01

Family

ID=13526018

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328985T Expired - Lifetime DE69328985T2 (de) 1992-03-30 1993-03-01 Gate-gesteuerte Diode und Verfahren zur Herstellung derselben

Country Status (4)

Country Link
US (2) US5309002A (de)
EP (1) EP0564094B1 (de)
JP (1) JP2810821B2 (de)
DE (1) DE69328985T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5581100A (en) * 1994-08-30 1996-12-03 International Rectifier Corporation Trench depletion MOSFET
JP3307785B2 (ja) * 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
DE19500588A1 (de) * 1995-01-11 1996-07-18 Abb Management Ag Bipolartransistor mit isolierter Steuerelektrode (IGBT) und dreidimensionaler MOS Struktur
US6693310B1 (en) * 1995-07-19 2004-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JP3850054B2 (ja) * 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US5940689A (en) * 1997-06-30 1999-08-17 Harris Corporation Method of fabricating UMOS semiconductor devices using a self-aligned, reduced mask process
DE19727676A1 (de) * 1997-06-30 1999-01-07 Asea Brown Boveri MOS gesteuertes Leistungshalbleiterbauelement
US6855983B1 (en) 1998-11-10 2005-02-15 Toyota Jidosha Kabushiki Kaisha Semiconductor device having reduced on resistance
US6936908B2 (en) 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
JP3908572B2 (ja) * 2002-03-18 2007-04-25 株式会社東芝 半導体素子
DE102004042758B4 (de) 2004-09-03 2006-08-24 Infineon Technologies Ag Halbleiterbauteil
JP2007134441A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置及びその製造方法
JP2006086548A (ja) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ
CN114551601B (zh) * 2022-04-26 2022-07-15 成都蓉矽半导体有限公司 高抗浪涌电流能力的集成栅控二极管的碳化硅mosfet
CN114551586B (zh) * 2022-04-27 2022-07-12 成都蓉矽半导体有限公司 集成栅控二极管的碳化硅分离栅mosfet元胞及制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60955B2 (ja) * 1978-02-07 1985-01-11 三菱電機株式会社 静電誘導サイリスタおよびその製造方法
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS6232646A (ja) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタの製造方法
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
JPS6269556A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp アノ−ド短絡型ゲ−トタ−ンオフサイリスタの製造方法
JPH0783115B2 (ja) * 1986-03-20 1995-09-06 松下電子工業株式会社 絶縁ゲ−ト型電界効果トランジスタ
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors
CH670334A5 (de) * 1986-09-16 1989-05-31 Bbc Brown Boveri & Cie
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US5173435A (en) * 1987-11-11 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
IT1218200B (it) * 1988-03-29 1990-04-12 Sgs Thomson Microelectronics Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
US5223442A (en) * 1988-04-08 1993-06-29 Kabushiki Kaisha Toshiba Method of making a semiconductor device of a high withstand voltage
US4963950A (en) * 1988-05-02 1990-10-16 General Electric Company Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
US5248622A (en) * 1988-10-04 1993-09-28 Kabushiki Kashiba Toshiba Finely controlled semiconductor device and method of manufacturing the same
US4994883A (en) * 1989-10-02 1991-02-19 General Electric Company Field controlled diode (FCD) having MOS trench gates
JPH0795596B2 (ja) * 1989-10-23 1995-10-11 三菱電機株式会社 サイリスタ及びその製造方法
US5194394A (en) * 1989-10-23 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of manufacturing the same
JPH0795597B2 (ja) * 1990-08-18 1995-10-11 三菱電機株式会社 サイリスタおよびその製造方法
JP3297060B2 (ja) * 1990-09-17 2002-07-02 株式会社東芝 絶縁ゲート型サイリスタ
US5106770A (en) * 1990-11-16 1992-04-21 Gte Laboratories Incorporated Method of manufacturing semiconductor devices

Also Published As

Publication number Publication date
US5309002A (en) 1994-05-03
JPH05275685A (ja) 1993-10-22
JP2810821B2 (ja) 1998-10-15
US5360746A (en) 1994-11-01
EP0564094B1 (de) 2000-07-12
DE69328985D1 (de) 2000-08-17
EP0564094A2 (de) 1993-10-06
EP0564094A3 (en) 1994-09-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)