DE69326706D1 - Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper - Google Patents

Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper

Info

Publication number
DE69326706D1
DE69326706D1 DE69326706T DE69326706T DE69326706D1 DE 69326706 D1 DE69326706 D1 DE 69326706D1 DE 69326706 T DE69326706 T DE 69326706T DE 69326706 T DE69326706 T DE 69326706T DE 69326706 D1 DE69326706 D1 DE 69326706D1
Authority
DE
Germany
Prior art keywords
producing
layer
semiconductor body
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69326706T
Other languages
English (en)
Other versions
DE69326706T2 (de
Inventor
Masahide Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69326706D1 publication Critical patent/DE69326706D1/de
Application granted granted Critical
Publication of DE69326706T2 publication Critical patent/DE69326706T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
DE69326706T 1992-02-18 1993-02-16 Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper Expired - Fee Related DE69326706T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4029842A JPH05226241A (ja) 1992-02-18 1992-02-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69326706D1 true DE69326706D1 (de) 1999-11-18
DE69326706T2 DE69326706T2 (de) 2000-11-16

Family

ID=12287261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326706T Expired - Fee Related DE69326706T2 (de) 1992-02-18 1993-02-16 Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper

Country Status (4)

Country Link
US (1) US5238878A (de)
EP (1) EP0556784B1 (de)
JP (1) JPH05226241A (de)
DE (1) DE69326706T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453406A (en) * 1994-06-13 1995-09-26 Industrial Technology Research Institute Aspect ratio independent coating for semiconductor planarization using SOG
KR100212089B1 (ko) * 1994-09-09 1999-08-02 모리시타 요이찌 박막형성방법 및 그 장치
US5935331A (en) * 1994-09-09 1999-08-10 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming films
US5705232A (en) * 1994-09-20 1998-01-06 Texas Instruments Incorporated In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing
KR100200297B1 (ko) * 1995-06-30 1999-06-15 김영환 반도체 소자의 콘택홀 형성방법
US5567660A (en) * 1995-09-13 1996-10-22 Taiwan Semiconductor Manufacturing Company Ltd Spin-on-glass planarization by a new stagnant coating method
JP3504444B2 (ja) * 1996-09-13 2004-03-08 日本テキサス・インスツルメンツ株式会社 レジスト材料の塗布方法及び半導体装置の製造方法
JP2002501425A (ja) * 1996-10-28 2002-01-15 ロバート・ハープスト 薄い膜を形成する方法及び装置
US5932163A (en) * 1996-12-18 1999-08-03 Ashley; Louis S. Thin film cover and method of making same
JP3563605B2 (ja) * 1998-03-16 2004-09-08 東京エレクトロン株式会社 処理装置
FR2780665B1 (fr) * 1998-07-03 2000-09-15 Oreal Procede et dispositif pour appliquer un revetement tel qu'une peinture ou un vernis
JP2000082647A (ja) * 1998-09-04 2000-03-21 Nec Corp レジスト膜の塗布方法及び塗布装置
JP3800282B2 (ja) * 1998-11-30 2006-07-26 大日本スクリーン製造株式会社 塗布液塗布方法
US6171980B1 (en) * 1999-08-05 2001-01-09 Nec Electronics, Inc. Polyimide coating process with dilute TMAH and DI-water backrinse
US20020005539A1 (en) 2000-04-04 2002-01-17 John Whitman Spin coating for maximum fill characteristic yielding a planarized thin film surface
JP2002076250A (ja) * 2000-08-29 2002-03-15 Nec Corp 半導体装置
US6436851B1 (en) * 2001-01-05 2002-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method for spin coating a high viscosity liquid on a wafer
US6303524B1 (en) 2001-02-20 2001-10-16 Mattson Thermal Products Inc. High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques
US7655316B2 (en) * 2004-07-09 2010-02-02 Applied Materials, Inc. Cleaning of a substrate support
FI20070189L (fi) * 2007-03-05 2008-09-06 Pintavision Oy Menetelmä pinnoittaa työkappale ja laite työkappaleen pinnoittamiseksi
CN102779724A (zh) * 2011-05-11 2012-11-14 均豪精密工业股份有限公司 单面蚀刻方法及单面蚀刻装置
JP2013142763A (ja) * 2012-01-11 2013-07-22 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物の塗膜形成方法
WO2018044298A1 (en) * 2016-08-31 2018-03-08 South Dakota Board Of Regents Multilayer thin film nanocomposite membranes prepared by molecular layer-by-layer assembly
CN111266265B (zh) * 2018-12-05 2021-10-08 长鑫存储技术有限公司 一种半导体的涂布设备及涂布方法
CN111604236B (zh) * 2020-06-11 2022-07-08 沈阳芯源微电子设备股份有限公司 一种以taiko环结构为衬底的超薄型晶圆的涂胶方法
WO2023235841A1 (en) 2022-06-03 2023-12-07 Avient Corporation Polymer backside film layer for mitigating substrate warpage

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819350B2 (ja) * 1976-04-08 1983-04-18 富士写真フイルム株式会社 スピンコ−テイング方法
DE2637105B2 (de) * 1976-08-18 1978-10-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum gleichmäßigen Verteilen eines Lackes
JPS5512750A (en) * 1978-07-12 1980-01-29 Mitsubishi Electric Corp Resist application device
JPS55103728A (en) * 1979-02-05 1980-08-08 Nec Corp Coating method of photo-resist
EP0102198A3 (de) * 1982-08-03 1986-06-11 Texas Instruments Incorporated Einrichtung und Verfahren zur Materialentfernung mit einem Flüssigkeitsstrom innerhalb eines Schlitzes
US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) * 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
JPS61184824A (ja) * 1985-02-13 1986-08-18 Nippon Telegr & Teleph Corp <Ntt> レジスト塗布方法およびレジスト塗布装置
JPS63136528A (ja) * 1986-11-27 1988-06-08 Mitsubishi Electric Corp 処理液塗布装置
US4886728A (en) * 1988-01-06 1989-12-12 Olin Hunt Specialty Products Inc. Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates
KR970006206B1 (ko) * 1988-02-10 1997-04-24 도오교오 에레구토론 가부시끼가이샤 자동 도포 시스템
KR0138097B1 (ko) * 1989-05-22 1998-06-15 고다까 토시오 도포장치
JPH03145715A (ja) * 1989-10-31 1991-06-20 Sony Corp 回転塗布膜形成装置
US5159374A (en) * 1991-04-04 1992-10-27 Vlsi Technology, Inc. Water sealing develop ring

Also Published As

Publication number Publication date
JPH05226241A (ja) 1993-09-03
US5238878A (en) 1993-08-24
DE69326706T2 (de) 2000-11-16
EP0556784B1 (de) 1999-10-13
EP0556784A1 (de) 1993-08-25

Similar Documents

Publication Publication Date Title
DE69326706D1 (de) Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper
DE69332511D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69333282D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69123228D1 (de) Verfahren zur Herstellung einer chemisch adsorbierten Schicht
DE69621723T2 (de) Verfahren zur Herstellung einer Schicht
DE69317800T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69330980D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69231655D1 (de) Verfahren zur Herstellung einer Graberstruktur in einem Halbleitersubstrat
DE69203419D1 (de) Verfahren zur Herstellung einer Fahrzeugkarosserieplatte.
DE69323979D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69434695D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69126949D1 (de) Verfahren zur Herstellung einer einkristallinen Schicht
DE69410137D1 (de) Verfahren zur Herstellung einer chalkopyrit-Halbleiterschicht
DE69024731D1 (de) Verfahren zur Herstellung einer plastikumhüllten Halbleiteranordnung
DE69719403D1 (de) Verfahren zur Herstellung einer Verbindungshalbleiterschicht
DE69326908D1 (de) Verfahren zur Herstellung einer Halbleiter-Anordnung
DE69027850D1 (de) Verfahren zur herstellung einer kohlenstoffschicht
DE59309045D1 (de) Verfahren zur herstellung einer halbleiterstruktur
DE3786364D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
DE68920726T2 (de) Verfahren zur bildung einer keramischen schicht auf einem metallkörper.
DE3784756D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
DE69323859D1 (de) Verfahren zur Herstellung einer isolierten Schicht
DE69023718D1 (de) Verfahren zur Herstellung einer Verbindungshalbleiterschicht.
ATA63090A (de) Verfahren zur herstellung einer dichtungsschicht
DE69032290T2 (de) Verfahren zur Herstellung einer amorphen Halbleiterschicht

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee