DE69325614T2 - Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten - Google Patents

Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten

Info

Publication number
DE69325614T2
DE69325614T2 DE69325614T DE69325614T DE69325614T2 DE 69325614 T2 DE69325614 T2 DE 69325614T2 DE 69325614 T DE69325614 T DE 69325614T DE 69325614 T DE69325614 T DE 69325614T DE 69325614 T2 DE69325614 T2 DE 69325614T2
Authority
DE
Germany
Prior art keywords
dielectric constant
high dielectric
layer
oxide
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325614T
Other languages
German (de)
English (en)
Other versions
DE69325614D1 (de
Inventor
Scott R Summerfelt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69325614D1 publication Critical patent/DE69325614D1/de
Application granted granted Critical
Publication of DE69325614T2 publication Critical patent/DE69325614T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • H10D64/0134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H10D64/01332—
    • H10D64/01336—
    • H10D64/01342—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H10P14/6506—
    • H10P14/6349—
    • H10P14/69396—
    • H10P14/69398—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69325614T 1992-05-01 1993-04-29 Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten Expired - Fee Related DE69325614T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87693092A 1992-05-01 1992-05-01

Publications (2)

Publication Number Publication Date
DE69325614D1 DE69325614D1 (de) 1999-08-19
DE69325614T2 true DE69325614T2 (de) 2000-01-13

Family

ID=25368867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325614T Expired - Fee Related DE69325614T2 (de) 1992-05-01 1993-04-29 Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten

Country Status (6)

Country Link
US (3) US5393352A (cg-RX-API-DMAC10.html)
EP (1) EP0568064B1 (cg-RX-API-DMAC10.html)
JP (1) JP3285408B2 (cg-RX-API-DMAC10.html)
KR (1) KR940006213A (cg-RX-API-DMAC10.html)
DE (1) DE69325614T2 (cg-RX-API-DMAC10.html)
TW (1) TW232748B (cg-RX-API-DMAC10.html)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69325614T2 (de) * 1992-05-01 2000-01-13 Texas Instruments Inc Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
US6537830B1 (en) 1992-10-23 2003-03-25 Symetrix Corporation Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material
DE69404189T2 (de) * 1993-03-31 1998-01-08 Texas Instruments Inc Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5629229A (en) * 1995-07-12 1997-05-13 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials
JP3274326B2 (ja) * 1995-09-08 2002-04-15 株式会社東芝 半導体装置およびその製造方法
US5612560A (en) * 1995-10-31 1997-03-18 Northern Telecom Limited Electrode structure for ferroelectric capacitors for integrated circuits
KR100215861B1 (ko) * 1996-03-13 1999-08-16 구본준 유전체 박막 제조방법 및 이를 이용한 반도체 장치제조방법
US6455916B1 (en) 1996-04-08 2002-09-24 Micron Technology, Inc. Integrated circuit devices containing isolated dielectric material
US6023082A (en) * 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US6548854B1 (en) 1997-12-22 2003-04-15 Agere Systems Inc. Compound, high-K, gate and capacitor insulator layer
EP0851473A3 (en) * 1996-12-23 1998-07-22 Lucent Technologies Inc. Method of making a layer with high dielectric K, gate and capacitor insulator layer and device
US6074885A (en) * 1997-11-25 2000-06-13 Radiant Technologies, Inc Lead titanate isolation layers for use in fabricating PZT-based capacitors and similar structures
US6171898B1 (en) 1997-12-17 2001-01-09 Texas Instruments Incorporated Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing
US6180446B1 (en) 1997-12-17 2001-01-30 Texas Instruments Incorporated Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing
US5998225A (en) * 1997-12-17 1999-12-07 Texas Instruments Incorporated Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing
US6184074B1 (en) 1997-12-17 2001-02-06 Texas Instruments Incorporated Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS
EP0926739A1 (en) 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
KR100275121B1 (ko) 1997-12-30 2001-01-15 김영환 강유전체 캐패시터 제조방법
KR100436059B1 (ko) * 1997-12-30 2004-12-17 주식회사 하이닉스반도체 강유전체 캐패시터 형성 방법
KR100275726B1 (ko) * 1997-12-31 2000-12-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
KR100321714B1 (ko) * 1998-12-30 2002-05-09 박종섭 반도체메모리소자의캐패시터제조방법
US6340827B1 (en) * 1999-01-13 2002-01-22 Agere Systems Guardian Corp. Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating same
US6241821B1 (en) 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6270568B1 (en) * 1999-07-15 2001-08-07 Motorola, Inc. Method for fabricating a semiconductor structure with reduced leakage current density
US6215644B1 (en) 1999-09-09 2001-04-10 Jds Uniphase Inc. High frequency tunable capacitors
KR100340951B1 (ko) * 1999-11-18 2002-06-22 윤덕용 초고집적도 디램 커패시터용 스트론튬-납 티탄산 박막의 제조방법
US6496351B2 (en) 1999-12-15 2002-12-17 Jds Uniphase Inc. MEMS device members having portions that contact a substrate and associated methods of operating
US6229684B1 (en) 1999-12-15 2001-05-08 Jds Uniphase Inc. Variable capacitor and associated fabrication method
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6291319B1 (en) * 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2001313429A (ja) * 2000-04-27 2001-11-09 Tdk Corp 積層薄膜その製造方法および電子デバイス
JP2004503920A (ja) * 2000-05-31 2004-02-05 モトローラ・インコーポレイテッド 半導体デバイスおよび該半導体デバイスを製造する方法
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
AU2001276989A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Thin-film metallic oxide structure and process for fabricating same
AU2001277001A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
JP2002208678A (ja) * 2001-01-11 2002-07-26 Fujitsu Ltd 半導体装置及びその製造方法
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6593833B2 (en) 2001-04-04 2003-07-15 Mcnc Tunable microwave components utilizing ferroelectric and ferromagnetic composite dielectrics and methods for making same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
KR101023034B1 (ko) * 2002-05-07 2011-03-24 에이에스엠 아메리카, 인코포레이티드 절연체상 실리콘 구조 및 방법
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
JP4422678B2 (ja) * 2002-12-17 2010-02-24 イブル・フォトニクス・インコーポレイテッド 蒸着法を用いた強誘電性単結晶膜構造物の製造方法
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
GB0906105D0 (en) 2009-04-08 2009-05-20 Ulive Entpr Ltd Mixed metal oxides
US8592294B2 (en) * 2010-02-22 2013-11-26 Asm International N.V. High temperature atomic layer deposition of dielectric oxides
EP3670708A1 (en) 2018-12-20 2020-06-24 IMEC vzw Perovskite oxides with a-axis orientation
US12362301B2 (en) 2020-06-26 2025-07-15 SanDisk Technologies, Inc. Bonded memory devices and methods of making the same
US11903218B2 (en) * 2020-06-26 2024-02-13 Sandisk Technologies Llc Bonded memory devices and methods of making the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994435A (en) * 1987-10-16 1991-02-19 The Furukawa Electric Co., Ltd. Laminated layers of a substrate, noble metal, and interlayer underneath an oxide superconductor
US5179070A (en) * 1988-04-30 1993-01-12 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film with a buffer layer in between
AU7479291A (en) * 1990-02-26 1991-09-18 Symetrix Corporation Electronic devices and methods of constructing and utilizing same
JPH0488685A (ja) * 1990-07-31 1992-03-23 Matsushita Electric Ind Co Ltd 薄膜基板およびその製造方法
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
DE59203461D1 (de) * 1991-11-04 1995-10-05 Asea Brown Boveri Speiseschaltung für eine Zweirohr-Hydraulik.
US5338951A (en) * 1991-11-06 1994-08-16 Ramtron International Corporation Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices
EP0540993A1 (en) * 1991-11-06 1993-05-12 Ramtron International Corporation Structure and fabrication of high transconductance MOS field effect transistor using a buffer layer/ferroelectric/buffer layer stack as the gate dielectric
US5326721A (en) * 1992-05-01 1994-07-05 Texas Instruments Incorporated Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
DE69325614T2 (de) * 1992-05-01 2000-01-13 Texas Instruments Inc Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials

Also Published As

Publication number Publication date
TW232748B (cg-RX-API-DMAC10.html) 1994-10-21
US5912486A (en) 1999-06-15
KR940006213A (ko) 1994-03-23
JPH06224184A (ja) 1994-08-12
US5650646A (en) 1997-07-22
EP0568064A3 (cg-RX-API-DMAC10.html) 1994-04-06
JP3285408B2 (ja) 2002-05-27
DE69325614D1 (de) 1999-08-19
EP0568064B1 (en) 1999-07-14
EP0568064A2 (en) 1993-11-03
US5393352A (en) 1995-02-28

Similar Documents

Publication Publication Date Title
DE69325614T2 (de) Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
DE69329629T2 (de) Oxyde mit hoher dielektrischer Konstante auf Halbleitern, die eine Ge-Pufferschicht benützen
DE69513782T2 (de) Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren
DE69404189T2 (de) Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
DE69404354T2 (de) Verbesserte Elektroden-Zwischenschicht für Materialien mit hohen dielektrisches Konstante
DE69633423T2 (de) Verfahren zur Herstellung eines mit einer dünnen ferroelektrischen Schicht überdeckten Substrats
DE69833168T2 (de) Halbleiter-Speicherbauteil mit ferroelektrischem Dünnfilm
DE69632769T2 (de) Verfahren zum Fertigen eines ferroelektrischen Schichtelements und das ferroelektrische Schichtelement sowie das ferroelektrische Speicherelement, die mit Hilfe dieses Verfahrens gefertigt werden
DE60224379T2 (de) Methode, eine dielektrische Schicht abzuscheiden
DE19630310C2 (de) Halbleitervorrichtung mit einem Kondensator und Verfahren zu deren Herstellung
DE69529942T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit einem kapazitiven Element
DE69125323T2 (de) Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
DE69526084T2 (de) Verfahren zur herstellung dotierter bst-schichten und kondensatoren für integrierte schaltungen mit magnesium dotierten bst schichten
DE69617658T2 (de) Niedrig-temperatur-verfahren zur herstellung von geschichteten supergittermaterialen
DE69201713T2 (de) Struktur eines Metall/Dielektrikum/Halbleiter-Kondensators mit hoher dielektrischer Konstante zum Gebrauch als Speicherkondensator in Speicheranordnungen.
DE69231865T2 (de) Verwendung von schichtigem übergitter material
DE69331743T2 (de) Herstellungsverfahren von geschichteten uebergittermaterialien und von diesen enthaltenden elektronischen vorrichtungen
DE69707356T2 (de) Kondensator mit dielektrischer Dünnschicht und Verfahren zur Herstellung
DE10131716A1 (de) Verfahren zur Herstellung eines Kondensators für eine Halbleiterspeichervorrichtung durch eine zweistufige Thermalbehandlung
DE10227346A1 (de) Ferroelektrische Speichervorrichtung, die eine ferroelektrische Planarisationsschicht verwendet, und Herstellungsverfahren
EP0776044A2 (de) Speicherzellenanordnung und Verfahren zu deren Herstellung
WO2000039842A1 (de) Kondensatorelektrodenanordnung
DE69327815T2 (de) Donatoren-dotierte Perovskite für Dünnfilm-Dielektrika
EP1113488A2 (de) Verfahren zum Herstellen einer strukturierten metalloxidhaltigen Schicht
EP1138065A1 (de) Verfahren zum herstellen einer strukturierten metalloxidhaltigen schicht

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee