JP3285408B2 - 緩衝層としてＰｂ／Ｂｉを含有しないペロブスカイトを用いたＰｂ／Ｂｉを含有する高比誘電率酸化物 - Google Patents

緩衝層としてＰｂ／Ｂｉを含有しないペロブスカイトを用いたＰｂ／Ｂｉを含有する高比誘電率酸化物

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Publication number
JP3285408B2
JP3285408B2 JP10455293A JP10455293A JP3285408B2 JP 3285408 B2 JP3285408 B2 JP 3285408B2 JP 10455293 A JP10455293 A JP 10455293A JP 10455293 A JP10455293 A JP 10455293A JP 3285408 B2 JP3285408 B2 JP 3285408B2
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Prior art keywords
layer
dielectric constant
oxide
high dielectric
buffer layer
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Expired - Fee Related
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JP10455293A
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English (en)
Japanese (ja)
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JPH06224184A (ja
Inventor
アール．サマーフェルト スコット
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テキサス インスツルメンツ インコーポレイテツド
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Application granted granted Critical
Publication of JP3285408B2 publication Critical patent/JP3285408B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10P14/60—
    • H10D64/0134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H10D64/01332—
    • H10D64/01336—
    • H10D64/01342—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H10P14/6506—
    • H10P14/6349—
    • H10P14/69396—
    • H10P14/69398—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP10455293A 1992-05-01 1993-04-30 緩衝層としてＰｂ／Ｂｉを含有しないペロブスカイトを用いたＰｂ／Ｂｉを含有する高比誘電率酸化物 Expired - Fee Related JP3285408B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87693092A 1992-05-01 1992-05-01
US876930 1992-05-01

Publications (2)

Publication Number Publication Date
JPH06224184A JPH06224184A (ja) 1994-08-12
JP3285408B2 true JP3285408B2 (ja) 2002-05-27

Family

ID=25368867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10455293A Expired - Fee Related JP3285408B2 (ja) 1992-05-01 1993-04-30 緩衝層としてＰｂ／Ｂｉを含有しないペロブスカイトを用いたＰｂ／Ｂｉを含有する高比誘電率酸化物

Country Status (6)

Country Link
US (3) US5393352A (cg-RX-API-DMAC10.html)
EP (1) EP0568064B1 (cg-RX-API-DMAC10.html)
JP (1) JP3285408B2 (cg-RX-API-DMAC10.html)
KR (1) KR940006213A (cg-RX-API-DMAC10.html)
DE (1) DE69325614T2 (cg-RX-API-DMAC10.html)
TW (1) TW232748B (cg-RX-API-DMAC10.html)

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Also Published As

Publication number Publication date
TW232748B (cg-RX-API-DMAC10.html) 1994-10-21
US5912486A (en) 1999-06-15
KR940006213A (ko) 1994-03-23
JPH06224184A (ja) 1994-08-12
US5650646A (en) 1997-07-22
EP0568064A3 (cg-RX-API-DMAC10.html) 1994-04-06
DE69325614D1 (de) 1999-08-19
EP0568064B1 (en) 1999-07-14
EP0568064A2 (en) 1993-11-03
DE69325614T2 (de) 2000-01-13
US5393352A (en) 1995-02-28

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