DE69324636T2 - Lithographische Phasenverschiebungsmasken mit verschiedenen Schichtzusammensetzungen - Google Patents

Lithographische Phasenverschiebungsmasken mit verschiedenen Schichtzusammensetzungen

Info

Publication number
DE69324636T2
DE69324636T2 DE69324636T DE69324636T DE69324636T2 DE 69324636 T2 DE69324636 T2 DE 69324636T2 DE 69324636 T DE69324636 T DE 69324636T DE 69324636 T DE69324636 T DE 69324636T DE 69324636 T2 DE69324636 T2 DE 69324636T2
Authority
DE
Germany
Prior art keywords
layer
thickness
substrate
layers
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324636T
Other languages
German (de)
English (en)
Other versions
DE69324636D1 (de
Inventor
Christophe Pierrat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69324636D1 publication Critical patent/DE69324636D1/de
Application granted granted Critical
Publication of DE69324636T2 publication Critical patent/DE69324636T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H10P76/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69324636T 1992-08-18 1993-08-11 Lithographische Phasenverschiebungsmasken mit verschiedenen Schichtzusammensetzungen Expired - Fee Related DE69324636T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93162192A 1992-08-18 1992-08-18

Publications (2)

Publication Number Publication Date
DE69324636D1 DE69324636D1 (de) 1999-06-02
DE69324636T2 true DE69324636T2 (de) 1999-09-23

Family

ID=25461092

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324636T Expired - Fee Related DE69324636T2 (de) 1992-08-18 1993-08-11 Lithographische Phasenverschiebungsmasken mit verschiedenen Schichtzusammensetzungen

Country Status (8)

Country Link
US (1) US5405721A (enExample)
EP (1) EP0583942B1 (enExample)
JP (1) JPH07295200A (enExample)
KR (1) KR100281151B1 (enExample)
DE (1) DE69324636T2 (enExample)
ES (1) ES2132192T3 (enExample)
SG (1) SG47405A1 (enExample)
TW (1) TW284911B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0127662B1 (ko) * 1994-03-11 1997-12-26 김주용 반도체 소자의 위상반전 마스크 제조방법
JPH0864519A (ja) * 1994-08-08 1996-03-08 Korea Electron Telecommun Ｔ字形のゲートの形成のためのフォトマスクおよびその製造方法
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
US5536606A (en) * 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5582939A (en) * 1995-07-10 1996-12-10 Micron Technology, Inc. Method for fabricating and using defect-free phase shifting masks
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
KR0166854B1 (ko) * 1996-06-27 1999-01-15 문정환 위상반전 마스크의 결함 수정방법
US5851704A (en) * 1996-12-09 1998-12-22 Micron Technology, Inc. Method and apparatus for the fabrication of semiconductor photomask
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
US6027837A (en) * 1997-10-14 2000-02-22 International Business Machines Corporation Method for tuning an attenuating phase shift mask
US6096459A (en) * 1998-12-28 2000-08-01 Micron Technology, Inc. Method for repairing alternating phase shifting masks
US6114073A (en) * 1998-12-28 2000-09-05 Micron Technology, Inc. Method for repairing phase shifting masks
US8206568B2 (en) * 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US6346352B1 (en) 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6716362B1 (en) 2000-10-24 2004-04-06 International Business Machines Corporation Method for thin film laser reflectance correlation for substrate etch endpoint
AU2002236520A1 (en) 2000-12-01 2002-06-11 Unaxis Usa Inc. Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US20030064521A1 (en) * 2001-09-28 2003-04-03 Zhijian Lu Method for ending point detection during etching process
US6841310B2 (en) 2002-02-05 2005-01-11 Micron Technology, Inc. Radiation patterning tools, and methods of forming radiation patterning tools
US6939650B2 (en) * 2003-01-17 2005-09-06 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a transmission mask with a carbon layer
US7303841B2 (en) * 2004-03-26 2007-12-04 Taiwan Semiconductor Manufacturing Company Repair of photolithography masks by sub-wavelength artificial grating technology
JP4535243B2 (ja) * 2004-05-11 2010-09-01 ルネサスエレクトロニクス株式会社 位相シフトマスクの製造方法
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
US7588864B2 (en) * 2004-12-06 2009-09-15 Macronix International Co., Ltd. Mask, method of manufacturing mask, and lithographic process
CN102183630A (zh) * 2005-04-06 2011-09-14 哈佛大学校长及研究员协会 用碳纳米管控制的分子鉴定
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147763A (en) * 1988-10-19 1992-09-15 Canon Kabushiki Kaisha Process for producing molding stamper for data recording medium substrate
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JPH0468352A (ja) * 1990-07-10 1992-03-04 Dainippon Printing Co Ltd 位相シフト層を有するフォトマスク及びその製造方法
US5144362A (en) * 1990-11-14 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Projection aligner
JPH05165189A (ja) * 1991-12-12 1993-06-29 Hitachi Ltd 光学マスク及びその修正方法
JP3034096B2 (ja) * 1991-11-12 2000-04-17 大日本印刷株式会社 位相シフトフォトマスクの修正方法
JPH07134397A (ja) * 1993-11-09 1995-05-23 Fujitsu Ltd 位相シフトマスクの修正方法と位相シフトマスク用基板

Also Published As

Publication number Publication date
HK1008699A1 (en) 1999-05-14
EP0583942A2 (en) 1994-02-23
DE69324636D1 (de) 1999-06-02
KR100281151B1 (ko) 2001-03-02
TW284911B (enExample) 1996-09-01
KR940004721A (ko) 1994-03-15
EP0583942A3 (en) 1996-07-24
EP0583942B1 (en) 1999-04-28
JPH07295200A (ja) 1995-11-10
SG47405A1 (en) 1998-04-17
ES2132192T3 (es) 1999-08-16
US5405721A (en) 1995-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee