KR100281151B1 - 상이한 조성의 위상 시프팅을 가진 위상시프팅 리소그래피 마스크 - Google Patents

상이한 조성의 위상 시프팅을 가진 위상시프팅 리소그래피 마스크 Download PDF

Info

Publication number
KR100281151B1
KR100281151B1 KR1019930015598A KR930015598A KR100281151B1 KR 100281151 B1 KR100281151 B1 KR 100281151B1 KR 1019930015598 A KR1019930015598 A KR 1019930015598A KR 930015598 A KR930015598 A KR 930015598A KR 100281151 B1 KR100281151 B1 KR 100281151B1
Authority
KR
South Korea
Prior art keywords
layer
substrate
thickness
phase shifting
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930015598A
Other languages
English (en)
Korean (ko)
Other versions
KR940004721A (ko
Inventor
크리스토프삐레라뜨
Original Assignee
죤 제이.키세인
에이 티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 죤 제이.키세인, 에이 티 앤드 티 코포레이션 filed Critical 죤 제이.키세인
Publication of KR940004721A publication Critical patent/KR940004721A/ko
Application granted granted Critical
Publication of KR100281151B1 publication Critical patent/KR100281151B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019930015598A 1992-08-18 1993-08-12 상이한 조성의 위상 시프팅을 가진 위상시프팅 리소그래피 마스크 Expired - Lifetime KR100281151B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93162192A 1992-08-18 1992-08-18
US931,621 1992-08-18

Publications (2)

Publication Number Publication Date
KR940004721A KR940004721A (ko) 1994-03-15
KR100281151B1 true KR100281151B1 (ko) 2001-03-02

Family

ID=25461092

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930015598A Expired - Lifetime KR100281151B1 (ko) 1992-08-18 1993-08-12 상이한 조성의 위상 시프팅을 가진 위상시프팅 리소그래피 마스크

Country Status (8)

Country Link
US (1) US5405721A (enExample)
EP (1) EP0583942B1 (enExample)
JP (1) JPH07295200A (enExample)
KR (1) KR100281151B1 (enExample)
DE (1) DE69324636T2 (enExample)
ES (1) ES2132192T3 (enExample)
SG (1) SG47405A1 (enExample)
TW (1) TW284911B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0127662B1 (ko) * 1994-03-11 1997-12-26 김주용 반도체 소자의 위상반전 마스크 제조방법
US5543253A (en) * 1994-08-08 1996-08-06 Electronics & Telecommunications Research Inst. Photomask for t-gate formation and process for fabricating the same
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
US5536606A (en) * 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5582939A (en) * 1995-07-10 1996-12-10 Micron Technology, Inc. Method for fabricating and using defect-free phase shifting masks
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
KR0166854B1 (ko) * 1996-06-27 1999-01-15 문정환 위상반전 마스크의 결함 수정방법
US5851704A (en) * 1996-12-09 1998-12-22 Micron Technology, Inc. Method and apparatus for the fabrication of semiconductor photomask
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
US6027837A (en) * 1997-10-14 2000-02-22 International Business Machines Corporation Method for tuning an attenuating phase shift mask
US6114073A (en) * 1998-12-28 2000-09-05 Micron Technology, Inc. Method for repairing phase shifting masks
US6096459A (en) * 1998-12-28 2000-08-01 Micron Technology, Inc. Method for repairing alternating phase shifting masks
US8206568B2 (en) * 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US6346352B1 (en) 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6716362B1 (en) 2000-10-24 2004-04-06 International Business Machines Corporation Method for thin film laser reflectance correlation for substrate etch endpoint
US6544696B2 (en) 2000-12-01 2003-04-08 Unaxis Usa Inc. Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US20030064521A1 (en) * 2001-09-28 2003-04-03 Zhijian Lu Method for ending point detection during etching process
US6841310B2 (en) * 2002-02-05 2005-01-11 Micron Technology, Inc. Radiation patterning tools, and methods of forming radiation patterning tools
US6939650B2 (en) * 2003-01-17 2005-09-06 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a transmission mask with a carbon layer
US7303841B2 (en) * 2004-03-26 2007-12-04 Taiwan Semiconductor Manufacturing Company Repair of photolithography masks by sub-wavelength artificial grating technology
JP4535243B2 (ja) * 2004-05-11 2010-09-01 ルネサスエレクトロニクス株式会社 位相シフトマスクの製造方法
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
US7588864B2 (en) * 2004-12-06 2009-09-15 Macronix International Co., Ltd. Mask, method of manufacturing mask, and lithographic process
CN101203740B (zh) * 2005-04-06 2011-03-23 哈佛大学校长及研究员协会 用碳纳米管控制的分子鉴定
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147763A (en) * 1988-10-19 1992-09-15 Canon Kabushiki Kaisha Process for producing molding stamper for data recording medium substrate
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JPH0468352A (ja) * 1990-07-10 1992-03-04 Dainippon Printing Co Ltd 位相シフト層を有するフォトマスク及びその製造方法
US5144362A (en) * 1990-11-14 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Projection aligner
JPH05165189A (ja) * 1991-12-12 1993-06-29 Hitachi Ltd 光学マスク及びその修正方法
JP3034096B2 (ja) * 1991-11-12 2000-04-17 大日本印刷株式会社 位相シフトフォトマスクの修正方法
JPH07134397A (ja) * 1993-11-09 1995-05-23 Fujitsu Ltd 位相シフトマスクの修正方法と位相シフトマスク用基板

Also Published As

Publication number Publication date
US5405721A (en) 1995-04-11
ES2132192T3 (es) 1999-08-16
EP0583942B1 (en) 1999-04-28
DE69324636D1 (de) 1999-06-02
EP0583942A2 (en) 1994-02-23
EP0583942A3 (en) 1996-07-24
HK1008699A1 (en) 1999-05-14
DE69324636T2 (de) 1999-09-23
TW284911B (enExample) 1996-09-01
KR940004721A (ko) 1994-03-15
SG47405A1 (en) 1998-04-17
JPH07295200A (ja) 1995-11-10

Similar Documents

Publication Publication Date Title
KR100281151B1 (ko) 상이한 조성의 위상 시프팅을 가진 위상시프팅 리소그래피 마스크
KR100190358B1 (ko) 투영 포토리소그래피용 위상 시프트 마스크 및 이의 제조방법
US6576374B1 (en) Mask blank and method of fabricating phase shift mask from the same
US5286581A (en) Phase-shift mask and method for making
US6913706B2 (en) Double-metal EUV mask absorber
US6583068B2 (en) Enhanced inspection of extreme ultraviolet mask
EP0493963B1 (en) Patterned mask having a transparent etching stopper layer
US5792578A (en) Method of forming multiple layer attenuating phase shifting masks
US6395433B1 (en) Photomask for projection lithography at or below about 160 nm and a method thereof
KR0170465B1 (ko) 포토마스크
US5935740A (en) Method and apparatus for the fabrication of semiconductor photomask
JPH10186632A (ja) ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク
US5246801A (en) Method of repairing indentations in phase-shifting lithographic masks
TWI402610B (zh) 用於製造積體電路之光遮罩，用於製造積體電路之成品結構二進位光遮罩，形成光遮罩之方法，以及微影圖樣化基板之方法
JPH1115132A (ja) ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスク用ブランク
KR100230376B1 (ko) 위상 시프트 마스크 및 그 제조방법
KR20050105267A (ko) 감쇠된 위상 시프트 마스크를 이용하여 웨이퍼상에서포토레지스트를 패터닝하는 방법
US6027837A (en) Method for tuning an attenuating phase shift mask
JPH05289305A (ja) 位相シフトフォトマスク
JP2000010255A (ja) ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスクの製造方法
EP0539006B1 (en) Method of repairing phase shifting lithographic masks
JP3322284B2 (ja) 位相シフトマスク及びその製造方法
KR100239960B1 (ko) 위상(位相) 쉬프트 포토마스크
HK1008699B (en) Phase-shifting lithographic masks having phase-shifting layers of differing compositions
JPH07281414A (ja) 位相シフトマスクブランク及び位相シフトマスクとその製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19930812

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19980721

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19930812

Comment text: Patent Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20000825

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20001115

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20001116

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20031030

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20041115

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20051028

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20061031

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20071026

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20081027

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20091116

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20101109

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20111109

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20121019

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20121019

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20140212

Termination category: Expiration of duration