ES2132192T3 - Mascaras litograficas de desplazamiento de fase que tienen capas de desplazamiento de fase de composiciones diferentes. - Google Patents

Mascaras litograficas de desplazamiento de fase que tienen capas de desplazamiento de fase de composiciones diferentes.

Info

Publication number
ES2132192T3
ES2132192T3 ES93306358T ES93306358T ES2132192T3 ES 2132192 T3 ES2132192 T3 ES 2132192T3 ES 93306358 T ES93306358 T ES 93306358T ES 93306358 T ES93306358 T ES 93306358T ES 2132192 T3 ES2132192 T3 ES 2132192T3
Authority
ES
Spain
Prior art keywords
layer
phase displacement
substrate
phase
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93306358T
Other languages
English (en)
Inventor
Christophe Pierrat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2132192T3 publication Critical patent/ES2132192T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

UNA MASCARA LITOGRAFICA DE DESPLAZAMIENTO DE FASE (500 O 600), PARA SU USO CONJUNTAMENTE CON RADIACION OPTICA DE LONGITUD DE ONDA LAMBDA, TIENE UN SUSTRATO TRANSPARENTE (10) SOBRE EL CUAL RADIAN ( 2M + 1) PI INFERIOR Y UNA CAPA DE DESPLAZAMIENTO DE FASE RADIAN (2N + 1) PI SUPERIOR CON FIGURAS GEOMETRICAS (12) TENIENDO CADA UNA AL MENOS APROXIMADAMENTE EL MISMO INDICE DE REFRACCION EN LA LONGITUD DE ONDA LAMBDA COMO LA DEL SUSTRATO. UNA CAPA DE CROMO OPACA CON FIGURAS GEOMETRICAS MAS FINAS (13) ESTA SITUADA SOBRE LA CAPA DE DESPLAZAMIENTO DE FASE SUPERIOR CON FIGURAS GEOMETRICAS. LA CAPA DE DESPLAZAMIENTO INFERIOR ES QUIMICAMENTE DIFERENTE TANTO DEL SUSTRATO COMO DE LA CAPA SUPERIOR, CON EL FIN DE PROPORCIONAR BIEN LA DETECCION DE LA PARADA DEL ATAQUE AL ACIDO O LA DETECCION DEL PUNTO FINAL DE ATAQUE AL ACIDO DURANTE LAS TRITURACIONES DE HACES DE IONES SECOS, -COMO IONES DE GALIO PROPOSITO DE REPARAR LA MASCARA. POR EJEMPLO, EL SUSTRATO ES CUARZO (SILICE), LA CAPA DE DESPLAZAMIENTO DE FASE INFERIOR ES FLUORURO DE CALCIO Y LA CAPA DE DESPLAZAMIENTO DE FASE SUPERIOR ES SILICE. LOS RESTOS DEL GALIO PUEDEN ENTONCES SER ELIMINADOS, SI ES NECESARIO DE LAS PARTES EXPUESTAS DES SUSTRATO Y DE LA CAPA INFERIR, POR LA FORMACION DE REGIONES DE INDENTACION (52; 51) MEDIANTE ATAQUES AL ACIDO SUCESIVOS POR EJEMPLO, CON HF Y CHI RESPECTIVAMENTE, DURANTE INTERVALOS DE TIEMPO PREESTABLECIDOS RESPECTIVOS QUE TIENEN UNA RELACION TAL QUE LOS DESPLAZAMIENTOS DE FASE RELATIVOS DEL SUSTRATO Y AMBAS CAPAS DE DESPLAZAMIENTO DE FASE NO SON AFECTADAS POR LOS RESPECTIVOS ATAQUES AL ACIDO.
ES93306358T 1992-08-18 1993-08-11 Mascaras litograficas de desplazamiento de fase que tienen capas de desplazamiento de fase de composiciones diferentes. Expired - Lifetime ES2132192T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93162192A 1992-08-18 1992-08-18

Publications (1)

Publication Number Publication Date
ES2132192T3 true ES2132192T3 (es) 1999-08-16

Family

ID=25461092

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93306358T Expired - Lifetime ES2132192T3 (es) 1992-08-18 1993-08-11 Mascaras litograficas de desplazamiento de fase que tienen capas de desplazamiento de fase de composiciones diferentes.

Country Status (9)

Country Link
US (1) US5405721A (es)
EP (1) EP0583942B1 (es)
JP (1) JPH07295200A (es)
KR (1) KR100281151B1 (es)
DE (1) DE69324636T2 (es)
ES (1) ES2132192T3 (es)
HK (1) HK1008699A1 (es)
SG (1) SG47405A1 (es)
TW (1) TW284911B (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0127662B1 (ko) * 1994-03-11 1997-12-26 김주용 반도체 소자의 위상반전 마스크 제조방법
US5543253A (en) * 1994-08-08 1996-08-06 Electronics & Telecommunications Research Inst. Photomask for t-gate formation and process for fabricating the same
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
US5536606A (en) * 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5582939A (en) * 1995-07-10 1996-12-10 Micron Technology, Inc. Method for fabricating and using defect-free phase shifting masks
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
KR0166854B1 (ko) * 1996-06-27 1999-01-15 문정환 위상반전 마스크의 결함 수정방법
US5851704A (en) * 1996-12-09 1998-12-22 Micron Technology, Inc. Method and apparatus for the fabrication of semiconductor photomask
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
US6027837A (en) * 1997-10-14 2000-02-22 International Business Machines Corporation Method for tuning an attenuating phase shift mask
US6096459A (en) * 1998-12-28 2000-08-01 Micron Technology, Inc. Method for repairing alternating phase shifting masks
US6114073A (en) * 1998-12-28 2000-09-05 Micron Technology, Inc. Method for repairing phase shifting masks
US8206568B2 (en) * 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US6346352B1 (en) 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6716362B1 (en) 2000-10-24 2004-04-06 International Business Machines Corporation Method for thin film laser reflectance correlation for substrate etch endpoint
US6544696B2 (en) 2000-12-01 2003-04-08 Unaxis Usa Inc. Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US20030064521A1 (en) * 2001-09-28 2003-04-03 Zhijian Lu Method for ending point detection during etching process
US6841310B2 (en) 2002-02-05 2005-01-11 Micron Technology, Inc. Radiation patterning tools, and methods of forming radiation patterning tools
US6939650B2 (en) * 2003-01-17 2005-09-06 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a transmission mask with a carbon layer
US7303841B2 (en) * 2004-03-26 2007-12-04 Taiwan Semiconductor Manufacturing Company Repair of photolithography masks by sub-wavelength artificial grating technology
JP4535243B2 (ja) * 2004-05-11 2010-09-01 ルネサスエレクトロニクス株式会社 位相シフトマスクの製造方法
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
US7588864B2 (en) * 2004-12-06 2009-09-15 Macronix International Co., Ltd. Mask, method of manufacturing mask, and lithographic process
AU2006336262B2 (en) * 2005-04-06 2011-10-13 President And Fellows Of Harvard College Molecular characterization with carbon nanotube control
JP6266842B2 (ja) * 2015-08-31 2018-01-24 Hoya株式会社 マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147763A (en) * 1988-10-19 1992-09-15 Canon Kabushiki Kaisha Process for producing molding stamper for data recording medium substrate
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JPH0468352A (ja) * 1990-07-10 1992-03-04 Dainippon Printing Co Ltd 位相シフト層を有するフォトマスク及びその製造方法
US5144362A (en) * 1990-11-14 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Projection aligner
JPH05165189A (ja) * 1991-12-12 1993-06-29 Hitachi Ltd 光学マスク及びその修正方法
JP3034096B2 (ja) * 1991-11-12 2000-04-17 大日本印刷株式会社 位相シフトフォトマスクの修正方法
JPH07134397A (ja) * 1993-11-09 1995-05-23 Fujitsu Ltd 位相シフトマスクの修正方法と位相シフトマスク用基板

Also Published As

Publication number Publication date
KR940004721A (ko) 1994-03-15
EP0583942B1 (en) 1999-04-28
EP0583942A2 (en) 1994-02-23
SG47405A1 (en) 1998-04-17
HK1008699A1 (en) 1999-05-14
JPH07295200A (ja) 1995-11-10
EP0583942A3 (en) 1996-07-24
US5405721A (en) 1995-04-11
DE69324636T2 (de) 1999-09-23
DE69324636D1 (de) 1999-06-02
KR100281151B1 (ko) 2001-03-02
TW284911B (es) 1996-09-01

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