DE69323655D1 - Halbleiterbauelement zur Betreibung eines Wärmeerzeugers - Google Patents
Halbleiterbauelement zur Betreibung eines WärmeerzeugersInfo
- Publication number
- DE69323655D1 DE69323655D1 DE69323655T DE69323655T DE69323655D1 DE 69323655 D1 DE69323655 D1 DE 69323655D1 DE 69323655 T DE69323655 T DE 69323655T DE 69323655 T DE69323655 T DE 69323655T DE 69323655 D1 DE69323655 D1 DE 69323655D1
- Authority
- DE
- Germany
- Prior art keywords
- operating
- semiconductor component
- heat generator
- generator
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15974892 | 1992-06-18 | ||
JP13028993A JP3305415B2 (ja) | 1992-06-18 | 1993-06-01 | 半導体装置、インクジェットヘッド、および画像形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323655D1 true DE69323655D1 (de) | 1999-04-08 |
DE69323655T2 DE69323655T2 (de) | 1999-09-02 |
Family
ID=26465462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323655T Expired - Lifetime DE69323655T2 (de) | 1992-06-18 | 1993-06-17 | Halbleiterbauelement zur Betreibung eines Wärmeerzeugers |
Country Status (4)
Country | Link |
---|---|
US (1) | US5517224A (de) |
EP (1) | EP0574911B1 (de) |
JP (1) | JP3305415B2 (de) |
DE (1) | DE69323655T2 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5598189A (en) * | 1993-09-07 | 1997-01-28 | Hewlett-Packard Company | Bipolar integrated ink jet printhead driver |
EP0750990A3 (de) * | 1995-06-28 | 1998-04-01 | Canon Kabushiki Kaisha | Flüssigkeit ausstossender Druckkopf, sein Herstellungsverfahren und Herstellungsverfahren eines Grundkörpers für einen solchen Druckkopf |
US5774148A (en) * | 1995-10-19 | 1998-06-30 | Lexmark International, Inc. | Printhead with field oxide as thermal barrier in chip |
JPH09248912A (ja) * | 1996-01-11 | 1997-09-22 | Canon Inc | インクジェットヘッド及びヘッド用基体、インクジェットカートリッジ、並びにインクジェット装置 |
DE69734797T2 (de) * | 1996-06-07 | 2006-07-27 | Canon K.K. | Aufzeichnungskopf und Aufzeichnungsvorrichtung |
JPH10774A (ja) * | 1996-06-14 | 1998-01-06 | Canon Inc | インクジェット記録ヘッド用基板及びこれを備えたインクジェット記録ヘッド |
US5738799A (en) * | 1996-09-12 | 1998-04-14 | Xerox Corporation | Method and materials for fabricating an ink-jet printhead |
JP3325808B2 (ja) * | 1997-01-23 | 2002-09-17 | シャープ株式会社 | 画像形成装置が備える制御電極の駆動回路 |
JP3147048B2 (ja) * | 1997-09-12 | 2001-03-19 | 日本電気株式会社 | 半導体装置 |
US6102528A (en) * | 1997-10-17 | 2000-08-15 | Xerox Corporation | Drive transistor for an ink jet printhead |
JP3883706B2 (ja) * | 1998-07-31 | 2007-02-21 | シャープ株式会社 | エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法 |
US6688729B1 (en) | 1999-06-04 | 2004-02-10 | Canon Kabushiki Kaisha | Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same |
US6476838B1 (en) * | 1999-09-03 | 2002-11-05 | Oki Data America, Inc. | Method of driving a thermal print head |
TW479022B (en) * | 2000-08-29 | 2002-03-11 | Acer Peripherals Inc | Drive circuit of ink-jet head with temperature detection function |
US6825543B2 (en) | 2000-12-28 | 2004-11-30 | Canon Kabushiki Kaisha | Semiconductor device, method for manufacturing the same, and liquid jet apparatus |
JP4827817B2 (ja) * | 2000-12-28 | 2011-11-30 | キヤノン株式会社 | 半導体装置およびそれを用いた液体吐出装置 |
US6800902B2 (en) | 2001-02-16 | 2004-10-05 | Canon Kabushiki Kaisha | Semiconductor device, method of manufacturing the same and liquid jet apparatus |
US6883894B2 (en) | 2001-03-19 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Printhead with looped gate transistor structures |
US6460974B1 (en) | 2001-07-27 | 2002-10-08 | Hewlett-Packard Company | Micro-pump and method for generating fluid flow |
JP3734246B2 (ja) * | 2001-10-30 | 2006-01-11 | キヤノン株式会社 | 液体吐出ヘッド及び構造体の製造方法、液体吐出ヘッド並びに液体吐出装置 |
US6657255B2 (en) * | 2001-10-30 | 2003-12-02 | General Semiconductor, Inc. | Trench DMOS device with improved drain contact |
JP4272854B2 (ja) * | 2002-07-10 | 2009-06-03 | キヤノン株式会社 | 半導体装置及びそれを用いた液体吐出装置 |
JP4298414B2 (ja) * | 2002-07-10 | 2009-07-22 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
KR100468787B1 (ko) * | 2003-05-02 | 2005-01-29 | 삼성전자주식회사 | 래치-업(Latch-up)에 의한 전류 흐름을 방지할 수있는 반도체 장치 |
JP2005125638A (ja) * | 2003-10-24 | 2005-05-19 | Sony Corp | 液体吐出ヘッド、液体吐出装置及び液体吐出ヘッドの製造方法 |
US7098509B2 (en) * | 2004-01-02 | 2006-08-29 | Semiconductor Components Industries, L.L.C. | High energy ESD structure and method |
KR100553914B1 (ko) * | 2004-01-29 | 2006-02-24 | 삼성전자주식회사 | 잉크젯 프린트헤드 및 그 제조방법 |
JP5063865B2 (ja) * | 2005-03-30 | 2012-10-31 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP4838026B2 (ja) * | 2006-03-27 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US9555630B2 (en) | 2007-12-02 | 2017-01-31 | Hewlett-Packard Development Company, L.P. | Electrically connecting electrically isolated printhead die ground networks at flexible circuit |
CN102024847B (zh) * | 2010-09-21 | 2014-04-09 | 电子科技大学 | 一种高压功率器件结构 |
US8395646B2 (en) * | 2011-06-14 | 2013-03-12 | Rohm Semiconductors USA, LLC | Thermal printer with energy save features |
US8411121B2 (en) | 2011-06-14 | 2013-04-02 | Rohm Semiconductor USA, LLC | Thermal printhead with optimally shaped resistor layer |
JP5847482B2 (ja) * | 2011-08-05 | 2016-01-20 | キヤノン株式会社 | インクジェット記録ヘッド |
JP5777762B2 (ja) * | 2014-03-20 | 2015-09-09 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 電気的に絶縁されるプリントヘッドダイ接地ネットワークをフレキシブル回路で電気的に接続する方法 |
JP6362376B2 (ja) * | 2014-03-27 | 2018-07-25 | キヤノン株式会社 | 液体吐出用基板、液体吐出用ヘッド、および、記録装置 |
JP6450169B2 (ja) * | 2014-04-02 | 2019-01-09 | キヤノン株式会社 | 半導体装置、液体吐出ヘッド、液体吐出カードリッジ及び液体吐出装置 |
JP6456040B2 (ja) * | 2014-04-28 | 2019-01-23 | キヤノン株式会社 | 液体吐出用基板、液体吐出用ヘッド、および、記録装置 |
JP6368393B2 (ja) * | 2017-02-22 | 2018-08-01 | キヤノン株式会社 | 記録素子基板、記録ヘッド及び記録装置 |
JP7027116B2 (ja) * | 2017-10-24 | 2022-03-01 | キヤノン株式会社 | 液体吐出装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4429321A (en) * | 1980-10-23 | 1984-01-31 | Canon Kabushiki Kaisha | Liquid jet recording device |
US4614407A (en) * | 1982-06-14 | 1986-09-30 | Canon Kabushiki Kaisha | Electrooptical device having fixed translucent indicia |
US5192990A (en) * | 1986-09-18 | 1993-03-09 | Eastman Kodak Company | Output circuit for image sensor |
US5081474A (en) * | 1988-07-04 | 1992-01-14 | Canon Kabushiki Kaisha | Recording head having multi-layer matrix wiring |
US5212503A (en) * | 1988-07-26 | 1993-05-18 | Canon Kabushiki Kaisha | Liquid jet recording head having a substrate with minimized electrode overlap |
US5055859A (en) * | 1988-11-16 | 1991-10-08 | Casio Computer Co., Ltd. | Integrated thermal printhead and driving circuit |
DE69015651T2 (de) * | 1989-01-13 | 1995-06-08 | Canon Kk | Aufzeichnungskopf. |
JP2662446B2 (ja) * | 1989-12-11 | 1997-10-15 | キヤノン株式会社 | 記録ヘッド及び記録ヘッド用素子基板 |
JP2708596B2 (ja) * | 1990-01-31 | 1998-02-04 | キヤノン株式会社 | 記録ヘッドおよびインクジェット記録装置 |
ATE205963T1 (de) * | 1990-05-31 | 2001-10-15 | Canon Kk | Halbleiteranordnung mit verbesserter leitungsführung |
EP0469370A3 (en) * | 1990-07-31 | 1992-09-09 | Gold Star Co. Ltd | Etching process for sloped side walls |
-
1993
- 1993-06-01 JP JP13028993A patent/JP3305415B2/ja not_active Expired - Fee Related
- 1993-06-17 EP EP93109690A patent/EP0574911B1/de not_active Expired - Lifetime
- 1993-06-17 DE DE69323655T patent/DE69323655T2/de not_active Expired - Lifetime
- 1993-06-17 US US08/077,382 patent/US5517224A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0669497A (ja) | 1994-03-11 |
EP0574911A3 (de) | 1994-03-30 |
US5517224A (en) | 1996-05-14 |
JP3305415B2 (ja) | 2002-07-22 |
DE69323655T2 (de) | 1999-09-02 |
EP0574911B1 (de) | 1999-03-03 |
EP0574911A2 (de) | 1993-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |