DE69319021D1 - Eingangsschutzschaltung mit einer hohen Spannungsfestigkeit - Google Patents

Eingangsschutzschaltung mit einer hohen Spannungsfestigkeit

Info

Publication number
DE69319021D1
DE69319021D1 DE69319021T DE69319021T DE69319021D1 DE 69319021 D1 DE69319021 D1 DE 69319021D1 DE 69319021 T DE69319021 T DE 69319021T DE 69319021 T DE69319021 T DE 69319021T DE 69319021 D1 DE69319021 D1 DE 69319021D1
Authority
DE
Germany
Prior art keywords
protection circuit
high dielectric
dielectric strength
input protection
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319021T
Other languages
English (en)
Other versions
DE69319021T2 (de
Inventor
William G Hawkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69319021D1 publication Critical patent/DE69319021D1/de
Publication of DE69319021T2 publication Critical patent/DE69319021T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69319021T 1992-05-06 1993-05-04 Eingangsschutzschaltung mit einer hohen Spannungsfestigkeit Expired - Fee Related DE69319021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/879,626 US5371395A (en) 1992-05-06 1992-05-06 High voltage input pad protection circuitry

Publications (2)

Publication Number Publication Date
DE69319021D1 true DE69319021D1 (de) 1998-07-16
DE69319021T2 DE69319021T2 (de) 1998-12-10

Family

ID=25374531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319021T Expired - Fee Related DE69319021T2 (de) 1992-05-06 1993-05-04 Eingangsschutzschaltung mit einer hohen Spannungsfestigkeit

Country Status (4)

Country Link
US (1) US5371395A (de)
EP (1) EP0569219B1 (de)
JP (1) JPH0621343A (de)
DE (1) DE69319021T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
KR0166101B1 (ko) * 1993-10-21 1999-01-15 김주용 정전방전 보호회로의 트랜지스터 및 그 제조방법
DE4423591C2 (de) * 1994-07-06 1996-08-29 Itt Ind Gmbh Deutsche Schutzstruktur für integrierte Schaltungen
US5733794A (en) * 1995-02-06 1998-03-31 Motorola, Inc. Process for forming a semiconductor device with ESD protection
US5701024A (en) * 1995-10-05 1997-12-23 Cypress Semiconductor Corp. Electrostatic discharge (ESD) protection structure for high voltage pins
KR100402672B1 (ko) * 1995-10-31 2004-06-04 텍사스 인스트루먼츠 인코포레이티드 CMOS/BiCMOS기술에서ESD방지를위한집적화된횡형구조
JP2787908B2 (ja) * 1995-12-25 1998-08-20 日本電気株式会社 半導体装置の製造方法
JPH09248912A (ja) * 1996-01-11 1997-09-22 Canon Inc インクジェットヘッド及びヘッド用基体、インクジェットカートリッジ、並びにインクジェット装置
US6071768A (en) * 1996-05-17 2000-06-06 Texas Instruments Incorporated Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
TW320772B (en) * 1996-09-23 1997-11-21 United Microelectronics Corp Protection component and production method for low voltage static discharge
US5910873A (en) * 1997-02-19 1999-06-08 National Semiconductor Corporation Field oxide transistor based feedback circuit for electrical overstress protection
US6501136B1 (en) * 1997-09-16 2002-12-31 Winbond Electronics Corporation High-speed MOSFET structure for ESD protection
US5936284A (en) * 1997-11-03 1999-08-10 Sgs-Thomson Microelectronics S.R.L. Electrostatic discharge protection circuit and transistor
US5960290A (en) * 1998-10-29 1999-09-28 United Microelectronics Corp. Method for fabricating a protection circuit of electrostatic discharge on a field device
US6114194A (en) * 1998-11-17 2000-09-05 United Microelectronics Corp. Method for fabricating a field device transistor
US6487507B1 (en) * 1999-10-15 2002-11-26 Micro Motion, Inc. Remote signal conditioner for a Coriolis flowmeter
JP2002370363A (ja) * 2001-06-15 2002-12-24 Canon Inc インクジェット記録ヘッド用基板、インクジェット記録ヘッド、インクジェット記録装置
JP2003072076A (ja) * 2001-08-31 2003-03-12 Canon Inc 記録ヘッド及びその記録ヘッドを用いた記録装置
JP4125153B2 (ja) * 2002-02-20 2008-07-30 キヤノン株式会社 半導体装置及びそれを用いた液体吐出装置
US7021748B2 (en) * 2002-07-19 2006-04-04 Canon Kabushiki Kaisha Ink jet head substrate, ink jet head using the substrate, and ink jet print apparatus
US6940131B2 (en) * 2003-06-30 2005-09-06 Texas Instruments Incorporated MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication
US7267430B2 (en) * 2005-03-29 2007-09-11 Lexmark International, Inc. Heater chip for inkjet printhead with electrostatic discharge protection
US7420842B1 (en) 2005-08-24 2008-09-02 Xilinx, Inc. Method of programming a three-terminal non-volatile memory element using source-drain bias
US7544968B1 (en) 2005-08-24 2009-06-09 Xilinx, Inc. Non-volatile memory cell with charge storage element and method of programming
US7687797B1 (en) 2005-08-24 2010-03-30 Xilinx, Inc. Three-terminal non-volatile memory element with hybrid gate dielectric
US7450431B1 (en) * 2005-08-24 2008-11-11 Xilinx, Inc. PMOS three-terminal non-volatile memory element and method of programming
US7361966B2 (en) * 2006-02-13 2008-04-22 Lexmark International, Inc. Actuator chip for inkjet printhead with electrostatic discharge protection
US8488288B2 (en) * 2008-06-27 2013-07-16 National Instruments Corporation Input protection method with variable tripping threshold and low parasitic elements
JP5121976B2 (ja) * 2011-05-27 2013-01-16 株式会社東芝 半導体装置
JP5537683B2 (ja) * 2013-01-21 2014-07-02 株式会社東芝 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650527A (en) * 1979-09-29 1981-05-07 Fujitsu Ltd Semiconductor integrated circuit device
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPS60767A (ja) * 1983-06-17 1985-01-05 Hitachi Ltd 半導体装置
DE3583301D1 (de) * 1984-03-31 1991-08-01 Toshiba Kawasaki Kk Schutzanordnung fuer einen mos-transistor.
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
JPS63248170A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置
JPH0712060B2 (ja) * 1987-07-02 1995-02-08 日本電気株式会社 相補型ｍｏｓデバイスの入力保護装置
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
JPH01140757A (ja) * 1987-11-27 1989-06-01 Nec Corp 半導体入力保護装置
US4947192A (en) * 1988-03-07 1990-08-07 Xerox Corporation Monolithic silicon integrated circuit chip for a thermal ink jet printer
JPH0227738A (ja) * 1988-07-15 1990-01-30 Seiko Epson Corp 半導体装置
US5055896A (en) * 1988-12-15 1991-10-08 Siliconix Incorporated Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability
JP2626229B2 (ja) * 1989-10-12 1997-07-02 日本電気株式会社 半導体入力保護装置
JPH0734477B2 (ja) * 1990-05-28 1995-04-12 株式会社東芝 半導体装置の製造方法
DE69129393T2 (de) * 1990-08-29 1998-12-17 Texas Instruments Inc Asymmetrische nichtflüchtige Speicherzelle, Matrix und Verfahren zu ihrer Herstellung
US5075250A (en) * 1991-01-02 1991-12-24 Xerox Corporation Method of fabricating a monolithic integrated circuit chip for a thermal ink jet printhead

Also Published As

Publication number Publication date
DE69319021T2 (de) 1998-12-10
EP0569219A2 (de) 1993-11-10
US5371395A (en) 1994-12-06
JPH0621343A (ja) 1994-01-28
EP0569219B1 (de) 1998-06-10
EP0569219A3 (en) 1995-11-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee