DE69233443D1 - Integrierte Schaltung mit einer hohen Spannungsfestigkeit - Google Patents

Integrierte Schaltung mit einer hohen Spannungsfestigkeit

Info

Publication number
DE69233443D1
DE69233443D1 DE69233443T DE69233443T DE69233443D1 DE 69233443 D1 DE69233443 D1 DE 69233443D1 DE 69233443 T DE69233443 T DE 69233443T DE 69233443 T DE69233443 T DE 69233443T DE 69233443 D1 DE69233443 D1 DE 69233443D1
Authority
DE
Germany
Prior art keywords
integrated circuit
high dielectric
dielectric strength
strength
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69233443T
Other languages
English (en)
Other versions
DE69233443T2 (de
Inventor
Tatsuhiko Fijihira
Masaharu Nishiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69233443D1 publication Critical patent/DE69233443D1/de
Publication of DE69233443T2 publication Critical patent/DE69233443T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Dc-Dc Converters (AREA)
DE69233443T 1991-11-29 1992-11-24 Integrierte Schaltung mit einer hohen Spannungsfestigkeit Expired - Lifetime DE69233443T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31568891 1991-11-29
JP3315688A JP2914408B2 (ja) 1991-11-29 1991-11-29 高耐圧集積回路

Publications (2)

Publication Number Publication Date
DE69233443D1 true DE69233443D1 (de) 2004-12-16
DE69233443T2 DE69233443T2 (de) 2005-03-17

Family

ID=18068363

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69233443T Expired - Lifetime DE69233443T2 (de) 1991-11-29 1992-11-24 Integrierte Schaltung mit einer hohen Spannungsfestigkeit

Country Status (4)

Country Link
US (1) US5399916A (de)
EP (1) EP0545604B1 (de)
JP (1) JP2914408B2 (de)
DE (1) DE69233443T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2901434B2 (ja) * 1992-09-30 1999-06-07 シャープ株式会社 直流安定化電源装置
JP4574960B2 (ja) * 2003-06-24 2010-11-04 ルネサスエレクトロニクス株式会社 車両用電源制御装置及び制御チップ
JP6271175B2 (ja) * 2013-07-16 2018-01-31 ローム株式会社 Ａｃ／ｄｃコンバータおよびその制御回路、電源アダプタおよび電子機器
JP6247469B2 (ja) * 2013-07-16 2017-12-13 ローム株式会社 Ａｃ／ｄｃコンバータおよびその制御回路、電源アダプタおよび電子機器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290005A (en) * 1980-07-07 1981-09-15 Gte Laboratories Incorporated Compensated reference voltage source
JPS59153331A (ja) * 1983-02-21 1984-09-01 Toshiba Corp 半導体装置
JPS62122262A (ja) * 1985-11-22 1987-06-03 Hitachi Ltd 半導体集積回路装置
JPH07105709B2 (ja) * 1986-05-19 1995-11-13 富士電機株式会社 電圧変換回路
EP0276850A3 (de) * 1987-01-28 1990-06-27 Kabushiki Kaisha Toshiba Integrierte Halbleiterschaltung mit Struktur gegen Verriegelung
JPH02246516A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 半導体装置
JP2553026Y2 (ja) * 1989-04-18 1997-11-05 株式会社豊田自動織機製作所 保護装置
US5084637A (en) * 1989-05-30 1992-01-28 International Business Machines Corp. Bidirectional level shifting interface circuit
US5043605A (en) * 1989-06-26 1991-08-27 At&T Bell Laboratories CMOS to ECL output buffer
US5095226A (en) * 1989-08-08 1992-03-10 Asahi Kogaku Kogyo Kabushiki Kaisha Device for operating charge transfer device with different power supply voltages
US5227680A (en) * 1989-11-15 1993-07-13 National Semiconductor Corporation ECL/TTL translator circuit
KR920005724Y1 (ko) * 1990-05-11 1992-08-20 삼성전자 주식회사 보조전원 방전회로가 내지된 smps
JPH0793811B2 (ja) * 1990-05-14 1995-10-09 株式会社東芝 サイリスタバルブの保護装置
KR100231393B1 (ko) * 1991-04-18 1999-11-15 나시모토 류조 반도체집적회로장치
US5168182A (en) * 1991-06-24 1992-12-01 United Technologies Corporation 0-100% duty cycle, transformer isolated fet driver
JPH0535668A (ja) * 1991-07-30 1993-02-12 Toshiba Corp 信号処理装置

Also Published As

Publication number Publication date
DE69233443T2 (de) 2005-03-17
EP0545604B1 (de) 2004-11-10
JP2914408B2 (ja) 1999-06-28
JPH05152513A (ja) 1993-06-18
US5399916A (en) 1995-03-21
EP0545604A2 (de) 1993-06-09
EP0545604A3 (de) 1995-11-22

Similar Documents

Publication Publication Date Title
DE69319021T2 (de) Eingangsschutzschaltung mit einer hohen Spannungsfestigkeit
DE69031357D1 (de) Halbleiteranordnung mit Mehrschichtleiter
DE69131342T2 (de) Isolierplatte mit hohen r-wert
DE69127953T2 (de) Leistungs-MOSFET-Schaltung mit einer aktiven Klammerung
DE69312855D1 (de) Schalter mit ausziehbaren Hilfskreisbaugruppen
DE69120917D1 (de) Schnittstellenschaltung mit Gleichstromwandler
DE69119521T2 (de) Verriegelungsschaltung mit verminderter Metastabilität
DE69119820D1 (de) Halbleiteranordnung mit verringten zeitabhängigen dielektrischen Fehlern
DE69123161D1 (de) Supraleitende Schaltung mit einer Ausgangsumwandlungsschaltung
DE69121845T2 (de) Halbleiterbauelement mit einer Eingangsschutzschaltung
DE69326284T2 (de) Halbleiteranordnung mit anschlusswählender Schaltung
DE59410440D1 (de) CMOS-Schaltung mit erhöhter Spannungsfestigkeit
DE69029112D1 (de) Digital-Analog-Wandler mit Widerstandsleiterschaltung
DE69120160T2 (de) Integrierte Schaltung mit einer Eingabe-Pufferschaltung
DE68925656D1 (de) Integrierte Schaltung mit einer Verbindungsverdrahtung
DE69233443D1 (de) Integrierte Schaltung mit einer hohen Spannungsfestigkeit
DE69132732D1 (de) Eingangsschutzschaltung mit einer hohen Spannungsfestigkeit für ein Halbleiterbauelement
DE69025973D1 (de) Halbleiteranordnung mit Mehrschichtleiterstruktur
DE59208956D1 (de) Integrierte Komparatorschaltung
DE69219270D1 (de) Integrierte Schaltung mit aufgeladenem Knoten
DE69221455T2 (de) Zentrierschaltung
DE68925061D1 (de) Integrierte Hochspannungsschaltung mit Isolierungsübergang
DE69202967D1 (de) Elektrisches Hochfrequenzfilter mit beliebiger Ordnung.
DE69230026D1 (de) Hohlleiter-Schalterkreis
DE69312876T2 (de) Mit einer Basisstromkompensationsschaltung versehener Konstantstromschaltkreis

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP

R071 Expiry of right

Ref document number: 545604

Country of ref document: EP