DE68925061D1 - Integrierte Hochspannungsschaltung mit Isolierungsübergang - Google Patents
Integrierte Hochspannungsschaltung mit IsolierungsübergangInfo
- Publication number
- DE68925061D1 DE68925061D1 DE68925061T DE68925061T DE68925061D1 DE 68925061 D1 DE68925061 D1 DE 68925061D1 DE 68925061 T DE68925061 T DE 68925061T DE 68925061 T DE68925061 T DE 68925061T DE 68925061 D1 DE68925061 D1 DE 68925061D1
- Authority
- DE
- Germany
- Prior art keywords
- voltage circuit
- integrated high
- insulation transition
- insulation
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20349/88A IT1217214B (it) | 1988-04-27 | 1988-04-27 | Circuito integrato per alta tensione con isolamento a giunzione |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68925061D1 true DE68925061D1 (de) | 1996-01-25 |
| DE68925061T2 DE68925061T2 (de) | 1996-05-09 |
Family
ID=11165942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE68925061T Expired - Fee Related DE68925061T2 (de) | 1988-04-27 | 1989-04-06 | Integrierte Hochspannungsschaltung mit Isolierungsübergang |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0339322B1 (de) |
| JP (1) | JPH01316971A (de) |
| DE (1) | DE68925061T2 (de) |
| IT (1) | IT1217214B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5426325A (en) * | 1993-08-04 | 1995-06-20 | Siliconix Incorporated | Metal crossover in high voltage IC with graduated doping control |
| US5959342A (en) * | 1993-12-08 | 1999-09-28 | Lucent Technologies Inc. | Semiconductor device having a high voltage termination improvement |
| JP2005236229A (ja) * | 2004-02-23 | 2005-09-02 | Sansha Electric Mfg Co Ltd | 高逆耐圧ｉｇｂｔの構造とその製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| IT1085486B (it) * | 1977-05-30 | 1985-05-28 | Ates Componenti Elettron | Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni |
| JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
| NL8401983A (nl) * | 1984-06-22 | 1986-01-16 | Philips Nv | Halfgeleiderinrichting met verhoogde doorslagspanning. |
-
1988
- 1988-04-27 IT IT20349/88A patent/IT1217214B/it active
-
1989
- 1989-04-06 EP EP89106030A patent/EP0339322B1/de not_active Expired - Lifetime
- 1989-04-06 DE DE68925061T patent/DE68925061T2/de not_active Expired - Fee Related
- 1989-04-26 JP JP1107127A patent/JPH01316971A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0339322A3 (en) | 1990-06-13 |
| JPH01316971A (ja) | 1989-12-21 |
| EP0339322A2 (de) | 1989-11-02 |
| DE68925061T2 (de) | 1996-05-09 |
| EP0339322B1 (de) | 1995-12-13 |
| IT1217214B (it) | 1990-03-14 |
| IT8820349A0 (it) | 1988-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND |
|
| 8339 | Ceased/non-payment of the annual fee |