IT1217214B - Circuito integrato per alta tensione con isolamento a giunzione - Google Patents
Circuito integrato per alta tensione con isolamento a giunzioneInfo
- Publication number
- IT1217214B IT1217214B IT20349/88A IT2034988A IT1217214B IT 1217214 B IT1217214 B IT 1217214B IT 20349/88 A IT20349/88 A IT 20349/88A IT 2034988 A IT2034988 A IT 2034988A IT 1217214 B IT1217214 B IT 1217214B
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- high voltage
- voltage integrated
- junction insulation
- junction
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT20349/88A IT1217214B (it) | 1988-04-27 | 1988-04-27 | Circuito integrato per alta tensione con isolamento a giunzione |
EP89106030A EP0339322B1 (en) | 1988-04-27 | 1989-04-06 | High-voltage integrated circuit with junction isolation |
DE68925061T DE68925061T2 (de) | 1988-04-27 | 1989-04-06 | Integrierte Hochspannungsschaltung mit Isolierungsübergang |
JP1107127A JPH01316971A (ja) | 1988-04-27 | 1989-04-26 | 接合分離を有する高電圧のための集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT20349/88A IT1217214B (it) | 1988-04-27 | 1988-04-27 | Circuito integrato per alta tensione con isolamento a giunzione |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8820349A0 IT8820349A0 (it) | 1988-04-27 |
IT1217214B true IT1217214B (it) | 1990-03-14 |
Family
ID=11165942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT20349/88A IT1217214B (it) | 1988-04-27 | 1988-04-27 | Circuito integrato per alta tensione con isolamento a giunzione |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0339322B1 (it) |
JP (1) | JPH01316971A (it) |
DE (1) | DE68925061T2 (it) |
IT (1) | IT1217214B (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5426325A (en) * | 1993-08-04 | 1995-06-20 | Siliconix Incorporated | Metal crossover in high voltage IC with graduated doping control |
US5959342A (en) * | 1993-12-08 | 1999-09-28 | Lucent Technologies Inc. | Semiconductor device having a high voltage termination improvement |
JP2005236229A (ja) * | 2004-02-23 | 2005-09-02 | Sansha Electric Mfg Co Ltd | 高逆耐圧igbtの構造とその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
IT1085486B (it) * | 1977-05-30 | 1985-05-28 | Ates Componenti Elettron | Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
NL8401983A (nl) * | 1984-06-22 | 1986-01-16 | Philips Nv | Halfgeleiderinrichting met verhoogde doorslagspanning. |
-
1988
- 1988-04-27 IT IT20349/88A patent/IT1217214B/it active
-
1989
- 1989-04-06 EP EP89106030A patent/EP0339322B1/en not_active Expired - Lifetime
- 1989-04-06 DE DE68925061T patent/DE68925061T2/de not_active Expired - Fee Related
- 1989-04-26 JP JP1107127A patent/JPH01316971A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0339322A3 (en) | 1990-06-13 |
DE68925061D1 (de) | 1996-01-25 |
DE68925061T2 (de) | 1996-05-09 |
JPH01316971A (ja) | 1989-12-21 |
IT8820349A0 (it) | 1988-04-27 |
EP0339322B1 (en) | 1995-12-13 |
EP0339322A2 (en) | 1989-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970429 |