DE69317026D1 - Akustisches Oberflächenwellen Bauelement - Google Patents

Akustisches Oberflächenwellen Bauelement

Info

Publication number
DE69317026D1
DE69317026D1 DE69317026T DE69317026T DE69317026D1 DE 69317026 D1 DE69317026 D1 DE 69317026D1 DE 69317026 T DE69317026 T DE 69317026T DE 69317026 T DE69317026 T DE 69317026T DE 69317026 D1 DE69317026 D1 DE 69317026D1
Authority
DE
Germany
Prior art keywords
surface wave
wave component
acoustic surface
acoustic
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69317026T
Other languages
English (en)
Other versions
DE69317026T2 (de
Inventor
Hideaki Nakahata
Akihiro Hachigo
Kenjiro Higaki
Shinichi Sikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69317026D1 publication Critical patent/DE69317026D1/de
Application granted granted Critical
Publication of DE69317026T2 publication Critical patent/DE69317026T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE69317026T 1992-09-14 1993-09-10 Akustisches Oberflächenwellen Bauelement Expired - Lifetime DE69317026T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24490692 1992-09-14
JP22247593A JP3205976B2 (ja) 1992-09-14 1993-09-07 表面弾性波素子

Publications (2)

Publication Number Publication Date
DE69317026D1 true DE69317026D1 (de) 1998-03-26
DE69317026T2 DE69317026T2 (de) 1998-10-08

Family

ID=26524904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317026T Expired - Lifetime DE69317026T2 (de) 1992-09-14 1993-09-10 Akustisches Oberflächenwellen Bauelement

Country Status (4)

Country Link
US (1) US5446329A (de)
EP (1) EP0588261B1 (de)
JP (1) JP3205976B2 (de)
DE (1) DE69317026T2 (de)

Families Citing this family (42)

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JP3344441B2 (ja) * 1994-03-25 2002-11-11 住友電気工業株式会社 表面弾性波素子
JP3318920B2 (ja) * 1994-05-10 2002-08-26 住友電気工業株式会社 表面弾性波素子
JP3295921B2 (ja) * 1994-06-20 2002-06-24 住友電気工業株式会社 表面弾性波素子用ダイヤモンド基材及び素子
JP3204290B2 (ja) * 1995-02-09 2001-09-04 住友電気工業株式会社 表面弾性波素子
US5783896A (en) * 1995-08-08 1998-07-21 Sumitomo Electric Industries, Ltd. Diamond-Zn0 surface acoustic wave device
JP3205978B2 (ja) * 1995-08-08 2001-09-04 住友電気工業株式会社 表面弾性波素子
US5959389A (en) * 1995-08-08 1999-09-28 Sumitomo Electronic Industries, Ltd. Diamond-ZnO surface acoustic wave device
JP3205981B2 (ja) * 1995-09-29 2001-09-04 住友電気工業株式会社 表面弾性波素子
JPH09223943A (ja) * 1996-02-19 1997-08-26 Nec Corp 弾性表面波デバイス
JP3416470B2 (ja) * 1996-07-18 2003-06-16 三洋電機株式会社 弾性表面波素子
MY129974A (en) * 1996-11-07 2007-05-31 Sumitomo Electric Industries Diamond-zn0 surface acoustic wave device
JP3781435B2 (ja) * 1997-05-08 2006-05-31 株式会社東芝 弾性境界波デバイス及びその製造方法
US5880552A (en) * 1997-05-27 1999-03-09 The United States Of America As Represented By The Secretary Of The Navy Diamond or diamond like carbon coated chemical sensors and a method of making same
US6222299B1 (en) * 1998-02-09 2001-04-24 Lucent Technologies Inc. Surface acoustic wave devices comprising large-grained diamonds and methods for making
EP1030443A3 (de) * 1999-02-16 2002-04-10 Sumitomo Electric Industries, Ltd. Akustische Oberflächenwellenanordnung
JP4186300B2 (ja) * 1999-03-24 2008-11-26 ヤマハ株式会社 弾性表面波素子
JP3712035B2 (ja) 1999-04-28 2005-11-02 株式会社村田製作所 表面波装置の製造方法
US6984918B1 (en) 1999-10-15 2006-01-10 Seiko Epson Corporation Saw device
EP1225694A4 (de) 1999-10-15 2005-08-03 Seiko Epson Corp Akusitische oberflächenwellenanordnung
JP3338010B2 (ja) * 1999-10-18 2002-10-28 富士通株式会社 弾性表面波素子及びその製造方法
US6469416B1 (en) 2000-03-24 2002-10-22 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
US6713941B2 (en) 2000-03-24 2004-03-30 Seiko Epson Corporation Surface acoustic wave element
JP2002057549A (ja) * 2000-08-09 2002-02-22 Sumitomo Electric Ind Ltd 表面弾性波素子用基板及び表面弾性波素子
US7011134B2 (en) * 2000-10-13 2006-03-14 Chien-Min Sung Casting method for producing surface acoustic wave devices
US6659161B1 (en) 2000-10-13 2003-12-09 Chien-Min Sung Molding process for making diamond tools
US7132309B2 (en) * 2003-04-22 2006-11-07 Chien-Min Sung Semiconductor-on-diamond devices and methods of forming
US6814130B2 (en) * 2000-10-13 2004-11-09 Chien-Min Sung Methods of making diamond tools using reverse casting of chemical vapor deposition
JP2003017967A (ja) * 2001-06-29 2003-01-17 Toshiba Corp 弾性表面波素子及びその製造方法
DE10155712B4 (de) * 2001-11-09 2009-07-16 Forschungszentrum Jülich GmbH Zinkoxid-Schicht und Verfahren zu dessen Herstellung
JP2006128075A (ja) * 2004-10-01 2006-05-18 Seiko Epson Corp 高周波加熱装置、半導体製造装置および光源装置
JP4289399B2 (ja) 2006-06-22 2009-07-01 セイコーエプソン株式会社 弾性波デバイスおよび弾性波デバイスの製造方法
EP1926211A3 (de) * 2006-11-21 2013-08-14 Imec Scherenmodusresonator für Diamanten von höherer Dicke
DE102006060240A1 (de) 2006-12-20 2008-06-26 Schmidt & Heinzmann Gmbh & Co. Kg Vorrichtung mit einer Hebevorrichtung
US8536665B2 (en) * 2007-08-22 2013-09-17 The Hong Kong Polytechnic University Fabrication of piezoelectric single crystalline thin layer on silicon wafer
US7846767B1 (en) 2007-09-06 2010-12-07 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
TW201004141A (en) * 2008-07-09 2010-01-16 Tatung Co High frequency surface acoustic wave device
JP2010068503A (ja) * 2008-08-13 2010-03-25 Seiko Epson Corp 弾性表面波素子
JP2011139214A (ja) * 2009-12-28 2011-07-14 Seiko Epson Corp 弾性表面波デバイス、発振器、モジュール装置
US8674790B2 (en) * 2009-12-28 2014-03-18 Seiko Epson Corporation Surface acoustic wave device, oscillator, module apparatus
US8624690B2 (en) * 2009-12-28 2014-01-07 Seiko Epson Corporation Surface acoustic wave device, oscillator, module apparatus
DE102016100925B4 (de) 2016-01-20 2018-05-30 Snaptrack, Inc. Filterschaltung
US10530328B2 (en) * 2017-09-22 2020-01-07 Huawei Technologies Co., Ltd. Surface acoustic wave device

Family Cites Families (28)

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Publication number Priority date Publication date Assignee Title
US3965444A (en) * 1975-01-03 1976-06-22 Raytheon Company Temperature compensated surface acoustic wave devices
JPS5438874A (en) * 1977-08-30 1979-03-24 Jirou Miyai Ornament made by processing white of egg
JPS5945286B2 (ja) * 1977-09-05 1984-11-05 松下電器産業株式会社 弾性表面波先振器用素子
US4243960A (en) * 1978-08-14 1981-01-06 The United States Of America As Represented By The Secretary Of The Navy Method and materials for tuning the center frequency of narrow-band surface-acoustic-wave (SAW) devices by means of dielectric overlays
JPS56149019A (en) * 1978-11-09 1981-11-18 Toshiba Corp Electrocoloring display element
JPS5687913A (en) * 1979-12-19 1981-07-17 Matsushita Electric Ind Co Ltd Surface elastic wave element
JPS56116317A (en) * 1980-02-19 1981-09-12 Matsushita Electric Ind Co Ltd Material for elastic surface wave
JPS56149813A (en) * 1980-04-23 1981-11-19 Fujitsu Ltd Elastic surface wave device
US4345176A (en) * 1980-11-03 1982-08-17 United Technologies Corporation Temperature compensated gallium arsenide surface acoustic wave devices
JPS5927753B2 (ja) * 1981-11-25 1984-07-07 科学技術庁無機材質研究所長 ダイヤモンドの合成法
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
JPS6041315A (ja) * 1983-08-17 1985-03-05 Toshiba Corp 弾性表面波素子
JPS6090416A (ja) * 1983-10-24 1985-05-21 Pioneer Electronic Corp 弾性表面波素子
US4484098A (en) * 1983-12-19 1984-11-20 United Technologies Corporation Environmentally stable lithium niobate acoustic wave devices
JPS6462911A (en) * 1987-09-03 1989-03-09 Sumitomo Electric Industries Surface acoustic wave element
JPH01103310A (ja) * 1987-10-16 1989-04-20 Sumitomo Electric Ind Ltd 表面弾性波素子
US5235233A (en) * 1988-03-17 1993-08-10 Fanuc Ltd. Surface acoustic wave device
EP0363495A4 (en) * 1988-03-17 1991-03-20 Fujitsu Limited Surface acoustic wave device
US4952832A (en) * 1989-10-24 1990-08-28 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
JP2885349B2 (ja) * 1989-12-26 1999-04-19 住友電気工業株式会社 表面弾性波素子
JP2515622B2 (ja) * 1990-09-25 1996-07-10 川崎重工業株式会社 弾性表面波センサの製法
US5086549A (en) * 1990-10-01 1992-02-11 The United States Of America As Represented By The Secretary Of The Army Method of preparing a lumbered quartz bar for sweeping and then sweeping said lumbered quartz bar
FR2667256A1 (fr) * 1990-10-02 1992-04-03 Thomson Csf Dispositif pour eliminer le givre forme en surface d'une paroi, notamment d'une fenetre optique ou radioelectrique.
JPH0590874A (ja) * 1991-09-26 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
DE4132309A1 (de) * 1991-09-27 1993-04-01 Siemens Ag Stoneleywellen-bauteil mit nicht-reflektierenden interdigitalwandlern
US5221870A (en) * 1991-09-30 1993-06-22 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
JP3225495B2 (ja) * 1992-02-21 2001-11-05 住友電気工業株式会社 表面弾性波素子及びその製造方法
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon

Also Published As

Publication number Publication date
EP0588261A1 (de) 1994-03-23
JP3205976B2 (ja) 2001-09-04
JPH06164294A (ja) 1994-06-10
DE69317026T2 (de) 1998-10-08
US5446329A (en) 1995-08-29
EP0588261B1 (de) 1998-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: SEIKO EPSON CORP., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN