DE69316162D1 - Methode zum Schreiben von Daten in einen nichtflüchtigen Halbleiterspeicher - Google Patents
Methode zum Schreiben von Daten in einen nichtflüchtigen HalbleiterspeicherInfo
- Publication number
- DE69316162D1 DE69316162D1 DE69316162T DE69316162T DE69316162D1 DE 69316162 D1 DE69316162 D1 DE 69316162D1 DE 69316162 T DE69316162 T DE 69316162T DE 69316162 T DE69316162 T DE 69316162T DE 69316162 D1 DE69316162 D1 DE 69316162D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- writing data
- volatile semiconductor
- volatile
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27137992A JPH06120515A (ja) | 1992-10-09 | 1992-10-09 | 半導体不揮発性メモリのデータ書き込み及びデータ消去方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69316162D1 true DE69316162D1 (de) | 1998-02-12 |
DE69316162T2 DE69316162T2 (de) | 1998-06-10 |
Family
ID=17499254
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69316162T Expired - Fee Related DE69316162T2 (de) | 1992-10-09 | 1993-10-05 | Methode zum Schreiben von Daten in einen nichtflüchtigen Halbleiterspeicher |
DE69324706T Expired - Fee Related DE69324706T2 (de) | 1992-10-09 | 1993-10-05 | Methode zum Löschen von Daten in einem nichtflüchtigen Halbleiterspeicher |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69324706T Expired - Fee Related DE69324706T2 (de) | 1992-10-09 | 1993-10-05 | Methode zum Löschen von Daten in einem nichtflüchtigen Halbleiterspeicher |
Country Status (5)
Country | Link |
---|---|
US (1) | US5402371A (de) |
EP (2) | EP0597585B1 (de) |
JP (1) | JPH06120515A (de) |
KR (1) | KR100292361B1 (de) |
DE (2) | DE69316162T2 (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US6433382B1 (en) * | 1995-04-06 | 2002-08-13 | Motorola, Inc. | Split-gate vertically oriented EEPROM device and process |
US5631583A (en) * | 1995-06-02 | 1997-05-20 | Xilinx, Inc. | Sense amplifier for programmable logic device having selectable power modes |
US5672524A (en) * | 1995-08-01 | 1997-09-30 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process |
US5945705A (en) * | 1995-08-01 | 1999-08-31 | Advanced Micro Devices, Inc. | Three-dimensional non-volatile memory |
KR100413652B1 (ko) * | 1995-09-11 | 2004-05-27 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체기억장치및그구동방법 |
US5706227A (en) * | 1995-12-07 | 1998-01-06 | Programmable Microelectronics Corporation | Double poly split gate PMOS flash memory cell |
JPH09162313A (ja) * | 1995-12-12 | 1997-06-20 | Rohm Co Ltd | 不揮発性半導体記憶装置およびその使用方法 |
US5814853A (en) * | 1996-01-22 | 1998-09-29 | Advanced Micro Devices, Inc. | Sourceless floating gate memory device and method of storing data |
US6057575A (en) * | 1996-03-18 | 2000-05-02 | Integrated Memory Technologies, Inc. | Scalable flash EEPROM memory cell, method of manufacturing and operation thereof |
US5856943A (en) * | 1996-03-18 | 1999-01-05 | Integrated Memory Technologies, Inc. | Scalable flash EEPROM memory cell and array |
JP3282965B2 (ja) * | 1996-03-26 | 2002-05-20 | シャープ株式会社 | トランジスタ |
DE19638969C2 (de) * | 1996-09-23 | 2002-05-16 | Mosel Vitelic Inc | EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung |
JP3370563B2 (ja) * | 1997-07-09 | 2003-01-27 | シャープ株式会社 | 不揮発性半導体記憶装置の駆動方法 |
JP3378879B2 (ja) | 1997-12-10 | 2003-02-17 | 松下電器産業株式会社 | 不揮発性半導体記憶装置及びその駆動方法 |
KR19990088517A (ko) * | 1998-05-22 | 1999-12-27 | 마 유에 예일 | 비휘발성메모리셀구조및비휘발성메모리셀을작동시키는방법 |
US6140182A (en) * | 1999-02-23 | 2000-10-31 | Actrans System Inc. | Nonvolatile memory with self-aligned floating gate and fabrication process |
US6091104A (en) | 1999-03-24 | 2000-07-18 | Chen; Chiou-Feng | Flash memory cell with self-aligned gates and fabrication process |
US6208557B1 (en) * | 1999-05-21 | 2001-03-27 | National Semiconductor Corporation | EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming |
US6348710B1 (en) * | 1999-05-21 | 2002-02-19 | Sanyo Electric Co., Ltd. | Non-volatile semiconductor memory device |
US6313498B1 (en) | 1999-05-27 | 2001-11-06 | Actrans System Inc. | Flash memory cell with thin floating gate with rounded side wall, and fabrication process |
TW480736B (en) * | 1999-06-24 | 2002-03-21 | Taiwan Semiconductor Mfg | Program and erase method of flash memory |
US6222227B1 (en) | 1999-08-09 | 2001-04-24 | Actrans System Inc. | Memory cell with self-aligned floating gate and separate select gate, and fabrication process |
US6184554B1 (en) | 1999-08-09 | 2001-02-06 | Actrans System Inc. | Memory cell with self-aligned floating gate and separate select gate, and fabrication process |
US6426896B1 (en) | 2000-05-22 | 2002-07-30 | Actrans System Inc. | Flash memory cell with contactless bit line, and process of fabrication |
TW451466B (en) * | 2000-06-09 | 2001-08-21 | Macronix Int Co Ltd | A method of erasing a non-volatile memory |
DE10122075B4 (de) * | 2001-05-07 | 2008-05-29 | Qimonda Ag | Halbleiterspeicherzelle und deren Herstellungsverfahren |
JP3871049B2 (ja) * | 2002-12-10 | 2007-01-24 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
TW573359B (en) * | 2003-01-28 | 2004-01-21 | Powerchip Semiconductor Corp | Flash memory cell structure and operating method thereof |
US6962851B2 (en) * | 2003-03-19 | 2005-11-08 | Promos Technologies, Inc. | Nonvolatile memories and methods of fabrication |
US6995060B2 (en) * | 2003-03-19 | 2006-02-07 | Promos Technologies Inc. | Fabrication of integrated circuit elements in structures with protruding features |
US6962852B2 (en) | 2003-03-19 | 2005-11-08 | Promos Technologies Inc. | Nonvolatile memories and methods of fabrication |
US6893921B2 (en) * | 2003-04-10 | 2005-05-17 | Mosel Vitelic, Inc. | Nonvolatile memories with a floating gate having an upward protrusion |
US7214585B2 (en) * | 2003-05-16 | 2007-05-08 | Promos Technologies Inc. | Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges |
US6846712B2 (en) * | 2003-05-16 | 2005-01-25 | Promos Technologies Inc. | Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates |
US6902974B2 (en) * | 2003-05-16 | 2005-06-07 | Promos Technologies Inc. | Fabrication of conductive gates for nonvolatile memories from layers with protruding portions |
US6974739B2 (en) * | 2003-05-16 | 2005-12-13 | Promos Technologies Inc. | Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit |
US7060565B2 (en) * | 2003-07-30 | 2006-06-13 | Promos Technologies Inc. | Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates |
US6951782B2 (en) * | 2003-07-30 | 2005-10-04 | Promos Technologies, Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions |
US6885044B2 (en) * | 2003-07-30 | 2005-04-26 | Promos Technologies, Inc. | Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates |
US7101757B2 (en) * | 2003-07-30 | 2006-09-05 | Promos Technologies, Inc. | Nonvolatile memory cells with buried channel transistors |
US7169667B2 (en) * | 2003-07-30 | 2007-01-30 | Promos Technologies Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate |
US7052947B2 (en) * | 2003-07-30 | 2006-05-30 | Promos Technologies Inc. | Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates |
JP2005051244A (ja) * | 2003-07-30 | 2005-02-24 | Mosel Vitelic Inc | 集積回路の製造方法 |
US7057931B2 (en) * | 2003-11-07 | 2006-06-06 | Sandisk Corporation | Flash memory programming using gate induced junction leakage current |
KR100513309B1 (ko) * | 2003-12-05 | 2005-09-07 | 삼성전자주식회사 | 비연속적인 전하 트랩 사이트를 갖는 비휘발성 메모리소자의 소거 방법들 |
US7238575B2 (en) * | 2004-03-10 | 2007-07-03 | Promos Technologies, Inc. | Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures |
US7148104B2 (en) * | 2004-03-10 | 2006-12-12 | Promos Technologies Inc. | Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures |
TW200607080A (en) * | 2004-08-02 | 2006-02-16 | Powerchip Semiconductor Corp | Flash memory cell and fabricating method thereof |
KR100706791B1 (ko) * | 2005-07-29 | 2007-04-12 | 삼성전자주식회사 | 비휘발성 기억 장치, 그 형성 방법 및 동작 방법 |
KR100683389B1 (ko) * | 2005-09-20 | 2007-02-15 | 동부일렉트로닉스 주식회사 | 플래시 메모리의 셀 트랜지스터 및 그 제조 방법 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
KR101510481B1 (ko) * | 2008-12-31 | 2015-04-10 | 주식회사 동부하이텍 | 플래시 메모리 소자 및 그 제조 방법 |
KR101277147B1 (ko) * | 2009-12-10 | 2013-06-20 | 한국전자통신연구원 | 이이피롬 장치 및 그 제조 방법 |
CN104979355B (zh) * | 2014-04-01 | 2018-08-03 | 苏州东微半导体有限公司 | 半浮栅存储器单元及半浮栅存储器阵列 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6418270A (en) * | 1987-07-13 | 1989-01-23 | Oki Electric Ind Co Ltd | Semiconductor memory device |
US5168465A (en) * | 1988-06-08 | 1992-12-01 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
KR940006094B1 (ko) * | 1989-08-17 | 1994-07-06 | 삼성전자 주식회사 | 불휘발성 반도체 기억장치 및 그 제조방법 |
JPH0444365A (ja) * | 1990-06-11 | 1992-02-14 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH0456362A (ja) * | 1990-06-26 | 1992-02-24 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH04123471A (ja) * | 1990-09-14 | 1992-04-23 | Oki Electric Ind Co Ltd | 半導体記憶装置のデータ書込みおよび消去方法 |
US5280446A (en) * | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
US5045491A (en) * | 1990-09-28 | 1991-09-03 | Texas Instruments Incorporated | Method of making a nonvolatile memory array having cells with separate program and erase regions |
US5235544A (en) * | 1990-11-09 | 1993-08-10 | John Caywood | Flash EPROM cell and method for operating same |
-
1992
- 1992-10-09 JP JP27137992A patent/JPH06120515A/ja not_active Withdrawn
-
1993
- 1993-09-22 KR KR1019930019314A patent/KR100292361B1/ko not_active IP Right Cessation
- 1993-10-05 EP EP93307897A patent/EP0597585B1/de not_active Expired - Lifetime
- 1993-10-05 DE DE69316162T patent/DE69316162T2/de not_active Expired - Fee Related
- 1993-10-05 DE DE69324706T patent/DE69324706T2/de not_active Expired - Fee Related
- 1993-10-05 EP EP95118099A patent/EP0706224B1/de not_active Expired - Lifetime
- 1993-10-07 US US08/132,952 patent/US5402371A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0597585B1 (de) | 1998-01-07 |
US5402371A (en) | 1995-03-28 |
EP0706224A3 (de) | 1996-04-17 |
DE69324706D1 (de) | 1999-06-02 |
EP0597585A2 (de) | 1994-05-18 |
EP0706224A2 (de) | 1996-04-10 |
KR940010355A (ko) | 1994-05-26 |
EP0706224B1 (de) | 1999-04-28 |
KR100292361B1 (ko) | 2001-09-17 |
EP0597585A3 (de) | 1994-08-31 |
DE69324706T2 (de) | 1999-10-14 |
JPH06120515A (ja) | 1994-04-28 |
DE69316162T2 (de) | 1998-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69316162T2 (de) | Methode zum Schreiben von Daten in einen nichtflüchtigen Halbleiterspeicher | |
DE69226928D1 (de) | Verfahren und Direktspeicherzugriffssteuerung zum asynchronen Daten-Lesen von einem -Schreiben in einen Speicher mit verbessertem Durchfluss | |
DE69115952D1 (de) | Abfühlschaltung zum Lesen von in nichtflüchtigen Speicherzellen gespeicherten Daten | |
DE69502169D1 (de) | Verfahren zum Einschreiben von Daten in einen Speicher und entsprechender elektrisch-programmierbarer Speicher | |
DE69802708T2 (de) | Verfahren zum speichern von daten in einen wiederbeschreibaren speicher einer chipkarte | |
DE69424927D1 (de) | Datenleseverfahren in Halbleiterspeicheranordnung geeignet zum Speichern von drei- oder mehrwertigen Daten in einer Speicherzelle | |
DE69427209D1 (de) | Anordnung und Verfahren zum Lesen von Mehrpegeldatensignalen in einem Halbleiterspeicher | |
DE69025162T2 (de) | System mit grosser Geschwindigkeit zum Lesen und Schreiben von Daten von und in entfernten Aufklebetranspondern | |
DE69530041D1 (de) | Halbleiterspeicher mit Synchronisationssteuerung zum Empfang von Daten in einem Ziel-Halbleiterspeichermodul | |
DE3684429D1 (de) | Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information. | |
DE69326416D1 (de) | Verfahren und Gerät zum ferngesteuerten Laden und Ausführen von Dateien in einen Speicher | |
DE3856216T2 (de) | Nicht-Flüchtiger Speicher | |
DE3483194D1 (de) | Nibbel- und wortadressierbarer speicher zum zugriff zu aufeinanderfolgenden dateneinheiten zum unterstuetzen dezimaler arithmetischer operationen. | |
DE69217761T2 (de) | Lese- und Schreibschaltung für einen Speicher | |
DE69630758D1 (de) | Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher | |
DE69716997D1 (de) | Gleichzeitiges Lese- und Schreibeverfahren von Daten in einem RAM-Speicher | |
DE69119208T2 (de) | Halbleiter-Speichereinrichtung mit Möglichkeit zum direkten Einlesen des Potentials von Bit-Lines | |
DE3689450T2 (de) | Halbleiterspeicher mit einem Leseverfahren in einem grossen Speisespannungsbereich. | |
DE69321685D1 (de) | Datenlöschverfahren in einem nicht-flüchtigen Halbleiterspeicher | |
DE69716844D1 (de) | Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ | |
DE69226853D1 (de) | Aufnahme- und Wiedergabeanordnung mit einer Block-löschbaren nichtflüchtigen Halbleiterspeicheranordnung für einen Block von spezifischen Datengruppen | |
DE3785324T2 (de) | Einrichtung zum lesen von daten aus einem speicher. | |
DE3050253C2 (de) | Verfahren zum Schreiben und lesen von Daten in bzw. aus Speicherzellen | |
DE69717052D1 (de) | Verfahren zum lesen von daten für einen ferroelektrischen speicher und ferroelektrischer speicher | |
DE3650079D1 (de) | Verfahren zum Schreiben und Lesen mit einem einen Flüssigkristall enthaltenden optischen Plattenspeicher. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |