DE69308915T2 - Vorrichtung zum Planieren von Zwischenschichten von Halbleitermaterial - Google Patents

Vorrichtung zum Planieren von Zwischenschichten von Halbleitermaterial

Info

Publication number
DE69308915T2
DE69308915T2 DE69308915T DE69308915T DE69308915T2 DE 69308915 T2 DE69308915 T2 DE 69308915T2 DE 69308915 T DE69308915 T DE 69308915T DE 69308915 T DE69308915 T DE 69308915T DE 69308915 T2 DE69308915 T2 DE 69308915T2
Authority
DE
Germany
Prior art keywords
layer
polishing
psi
bar
working surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69308915T
Other languages
German (de)
English (en)
Other versions
DE69308915D1 (de
Inventor
Thomas C Hyde
John V H Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rodel Inc
Westech Inc
Original Assignee
Rodel Inc
Westech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Inc, Westech Inc filed Critical Rodel Inc
Publication of DE69308915D1 publication Critical patent/DE69308915D1/de
Application granted granted Critical
Publication of DE69308915T2 publication Critical patent/DE69308915T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H10P50/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE69308915T 1992-01-31 1993-01-18 Vorrichtung zum Planieren von Zwischenschichten von Halbleitermaterial Expired - Lifetime DE69308915T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/829,736 US5257478A (en) 1990-03-22 1992-01-31 Apparatus for interlayer planarization of semiconductor material

Publications (2)

Publication Number Publication Date
DE69308915D1 DE69308915D1 (de) 1997-04-24
DE69308915T2 true DE69308915T2 (de) 1997-09-04

Family

ID=25255407

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69308915T Expired - Lifetime DE69308915T2 (de) 1992-01-31 1993-01-18 Vorrichtung zum Planieren von Zwischenschichten von Halbleitermaterial

Country Status (7)

Country Link
US (1) US5257478A (cg-RX-API-DMAC10.html)
EP (1) EP0555660B1 (cg-RX-API-DMAC10.html)
JP (1) JP3455556B2 (cg-RX-API-DMAC10.html)
KR (1) KR100265660B1 (cg-RX-API-DMAC10.html)
CN (1) CN1076152A (cg-RX-API-DMAC10.html)
DE (1) DE69308915T2 (cg-RX-API-DMAC10.html)
TW (1) TW222033B (cg-RX-API-DMAC10.html)

Families Citing this family (164)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697132A (ja) * 1992-07-10 1994-04-08 Lsi Logic Corp 半導体ウェハの化学機械的研磨装置、同装置のプラテンへの半導体ウェハ研磨用パッドの取付け方法、および同装置の研磨用複合パッド
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5564965A (en) * 1993-12-14 1996-10-15 Shin-Etsu Handotai Co., Ltd. Polishing member and wafer polishing apparatus
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US5783497A (en) * 1994-08-02 1998-07-21 Sematech, Inc. Forced-flow wafer polisher
US5562530A (en) * 1994-08-02 1996-10-08 Sematech, Inc. Pulsed-force chemical mechanical polishing
US5607341A (en) 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
US5679610A (en) * 1994-12-15 1997-10-21 Kabushiki Kaisha Toshiba Method of planarizing a semiconductor workpiece surface
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
DE69618698T2 (de) * 1995-03-28 2002-08-14 Applied Materials, Inc. Verfahren und Vorrichtung zur In-Situ-Kontroll und Bestimmung des Endes von chemisch-mechanischen Planiervorgänge
US6537133B1 (en) * 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US6876454B1 (en) * 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6676717B1 (en) 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US5945347A (en) 1995-06-02 1999-08-31 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
JP3329644B2 (ja) * 1995-07-21 2002-09-30 株式会社東芝 研磨パッド、研磨装置及び研磨方法
TW334379B (en) * 1995-08-24 1998-06-21 Matsushita Electric Industrial Co Ltd Compression mechanism for grinding machine of semiconductor substrate
US6135856A (en) * 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5899799A (en) * 1996-01-19 1999-05-04 Micron Display Technology, Inc. Method and system to increase delivery of slurry to the surface of large substrates during polishing operations
US6081959A (en) * 1996-07-01 2000-07-04 Umbrell; Richard Buffer centering system
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5785584A (en) * 1996-08-30 1998-07-28 International Business Machines Corporation Planarizing apparatus with deflectable polishing pad
JP2738392B1 (ja) * 1996-11-05 1998-04-08 日本電気株式会社 半導体装置の研磨装置及び研磨方法
JPH10156705A (ja) * 1996-11-29 1998-06-16 Sumitomo Metal Ind Ltd 研磨装置および研磨方法
US6379221B1 (en) 1996-12-31 2002-04-30 Applied Materials, Inc. Method and apparatus for automatically changing a polishing pad in a chemical mechanical polishing system
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US5968851A (en) * 1997-03-19 1999-10-19 Cypress Semiconductor Corp. Controlled isotropic etch process and method of forming an opening in a dielectric layer
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US6244946B1 (en) 1997-04-08 2001-06-12 Lam Research Corporation Polishing head with removable subcarrier
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
JP2001522316A (ja) * 1997-04-18 2001-11-13 キャボット マイクロエレクトロニクス コーポレイション 半導体基板用研磨パッド
US5885135A (en) * 1997-04-23 1999-03-23 International Business Machines Corporation CMP wafer carrier for preferential polishing of a wafer
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6108091A (en) 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
TW375550B (en) * 1997-06-19 1999-12-01 Komatsu Denshi Kinzoku Kk Polishing apparatus for semiconductor wafer
US6736714B2 (en) 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US5913713A (en) * 1997-07-31 1999-06-22 International Business Machines Corporation CMP polishing pad backside modifications for advantageous polishing results
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6234883B1 (en) 1997-10-01 2001-05-22 Lsi Logic Corporation Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
JPH11156699A (ja) * 1997-11-25 1999-06-15 Speedfam Co Ltd 平面研磨用パッド
US6096230A (en) * 1997-12-29 2000-08-01 Intel Corporation Method of planarizing by polishing a structure which is formed to promote planarization
WO1999048645A1 (en) * 1998-03-23 1999-09-30 Speedfam-Ipec Corporation Backing pad for workpiece carrier
JP3618541B2 (ja) * 1998-03-23 2005-02-09 信越半導体株式会社 研磨布、研磨布処理方法及び研磨方法
US6105197A (en) * 1998-04-14 2000-08-22 Umbrell; Richard T. Centering system for buffing pad
US6298518B1 (en) 1998-04-14 2001-10-09 Richard T. Umbrell Heat dissipating buffing pad
US7718102B2 (en) * 1998-06-02 2010-05-18 Praxair S.T. Technology, Inc. Froth and method of producing froth
US6514301B1 (en) 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US6126512A (en) * 1998-07-10 2000-10-03 Aplex Inc. Robust belt tracking and control system for hostile environment
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6315857B1 (en) 1998-07-10 2001-11-13 Mosel Vitelic, Inc. Polishing pad shaping and patterning
US6439967B2 (en) * 1998-09-01 2002-08-27 Micron Technology, Inc. Microelectronic substrate assembly planarizing machines and methods of mechanical and chemical-mechanical planarization of microelectronic substrate assemblies
US6254463B1 (en) 1998-10-09 2001-07-03 International Business Machines Corporation Chemical planar head dampening system
EP1138438B1 (en) 1998-11-09 2006-08-23 Toray Industries, Inc. Polishing pad and polishing device
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6716085B2 (en) 2001-12-28 2004-04-06 Applied Materials Inc. Polishing pad with transparent window
US6994607B2 (en) * 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6179709B1 (en) * 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6238592B1 (en) 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
US6217426B1 (en) 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
US20040072518A1 (en) * 1999-04-02 2004-04-15 Applied Materials, Inc. Platen with patterned surface for chemical mechanical polishing
EP1052062A1 (en) 1999-05-03 2000-11-15 Applied Materials, Inc. Pré-conditioning fixed abrasive articles
US6406363B1 (en) 1999-08-31 2002-06-18 Lam Research Corporation Unsupported chemical mechanical polishing belt
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6299516B1 (en) 1999-09-28 2001-10-09 Applied Materials, Inc. Substrate polishing article
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US6607428B2 (en) 2000-01-18 2003-08-19 Applied Materials, Inc. Material for use in carrier and polishing pads
US6533645B2 (en) 2000-01-18 2003-03-18 Applied Materials, Inc. Substrate polishing article
US6623341B2 (en) 2000-01-18 2003-09-23 Applied Materials, Inc. Substrate polishing apparatus
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7670468B2 (en) 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7678245B2 (en) 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US6962524B2 (en) * 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US6616801B1 (en) 2000-03-31 2003-09-09 Lam Research Corporation Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path
WO2001078125A1 (en) * 2000-04-12 2001-10-18 Shin-Etsu Handotai Co.,Ltd. Method for producing semiconductor wafer and semiconductor wafer
US6267659B1 (en) * 2000-05-04 2001-07-31 International Business Machines Corporation Stacked polish pad
US7374477B2 (en) * 2002-02-06 2008-05-20 Applied Materials, Inc. Polishing pads useful for endpoint detection in chemical mechanical polishing
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US6495464B1 (en) 2000-06-30 2002-12-17 Lam Research Corporation Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
EP1294536B1 (en) 2000-06-30 2005-04-20 Rohm and Haas Electronic Materials CMP Holdings, Inc. Base-pad for a polishing pad
US6666751B1 (en) * 2000-07-17 2003-12-23 Micron Technology, Inc. Deformable pad for chemical mechanical polishing
CN100537147C (zh) 2000-12-01 2009-09-09 东洋橡膠工业株式会社 研磨垫及其制造方法和研磨垫用缓冲层
KR100857504B1 (ko) * 2000-12-01 2008-09-08 도요 고무 고교 가부시키가이샤 연마 패드용 쿠션층
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6609961B2 (en) 2001-01-09 2003-08-26 Lam Research Corporation Chemical mechanical planarization belt assembly and method of assembly
US6544107B2 (en) 2001-02-16 2003-04-08 Agere Systems Inc. Composite polishing pads for chemical-mechanical polishing
US6863774B2 (en) * 2001-03-08 2005-03-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
JP2003100682A (ja) 2001-09-25 2003-04-04 Jsr Corp 半導体ウエハ用研磨パッド
US7097549B2 (en) * 2001-12-20 2006-08-29 Ppg Industries Ohio, Inc. Polishing pad
US6852020B2 (en) * 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
US7037184B2 (en) * 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US20030194959A1 (en) * 2002-04-15 2003-10-16 Cabot Microelectronics Corporation Sintered polishing pad with regions of contrasting density
US7025668B2 (en) * 2002-06-18 2006-04-11 Raytech Innovative Solutions, Llc Gradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers
KR100465649B1 (ko) * 2002-09-17 2005-01-13 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법
US20070010169A1 (en) * 2002-09-25 2007-01-11 Ppg Industries Ohio, Inc. Polishing pad with window for planarization
WO2004028744A1 (en) * 2002-09-25 2004-04-08 Ppg Industries Ohio, Inc. Polishing pad with window for planarization
JP2004160573A (ja) * 2002-11-11 2004-06-10 Ebara Corp 研磨装置
TW592894B (en) * 2002-11-19 2004-06-21 Iv Technologies Co Ltd Method of fabricating a polishing pad
US7141155B2 (en) 2003-02-18 2006-11-28 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US6884156B2 (en) 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US7435161B2 (en) * 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6998166B2 (en) * 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Polishing pad with oriented pore structure
US7264536B2 (en) * 2003-09-23 2007-09-04 Applied Materials, Inc. Polishing pad with window
US7101275B2 (en) * 2003-09-26 2006-09-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Resilient polishing pad for chemical mechanical polishing
US20050173259A1 (en) * 2004-02-06 2005-08-11 Applied Materials, Inc. Endpoint system for electro-chemical mechanical polishing
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
US8066552B2 (en) 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US20070087177A1 (en) * 2003-10-09 2007-04-19 Guangwei Wu Stacked pad and method of use
US7186651B2 (en) * 2003-10-30 2007-03-06 Texas Instruments Incorporated Chemical mechanical polishing method and apparatus
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
JP3754436B2 (ja) * 2004-02-23 2006-03-15 東洋ゴム工業株式会社 研磨パッドおよびそれを使用する半導体デバイスの製造方法
TWI293266B (en) * 2004-05-05 2008-02-11 Iv Technologies Co Ltd A single-layer polishing pad and a method of producing the same
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
TWI254354B (en) * 2004-06-29 2006-05-01 Iv Technologies Co Ltd An inlaid polishing pad and a method of producing the same
US7189156B2 (en) * 2004-08-25 2007-03-13 Jh Rhodes Company, Inc. Stacked polyurethane polishing pad and method of producing the same
US8075372B2 (en) * 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US20060089095A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US7182677B2 (en) * 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
WO2007016498A2 (en) * 2005-08-02 2007-02-08 Raytech Composites, Inc. Nonwoven polishing pads for chemical mechanical polishing
US7226345B1 (en) 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
CN101244535B (zh) * 2006-02-15 2012-06-13 应用材料公司 抛光仓
US20080274674A1 (en) * 2007-05-03 2008-11-06 Cabot Microelectronics Corporation Stacked polishing pad for high temperature applications
US8430721B2 (en) * 2007-12-31 2013-04-30 Innopad, Inc. Chemical-mechanical planarization pad
KR101281076B1 (ko) * 2008-05-15 2013-07-09 세미퀘스트, 인코포레이티드 종결점 윈도우를 구비하는 연마 패드와, 이 연마 패드를 이용하는 시스템 및 방법
TWI409137B (zh) * 2008-06-19 2013-09-21 Bestac Advanced Material Co Ltd 研磨墊及其微型結構形成方法
KR20110019442A (ko) * 2008-06-26 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법
KR20110033277A (ko) * 2008-07-18 2011-03-30 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플로팅 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법과 이용 방법
US7820005B2 (en) * 2008-07-18 2010-10-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad manufacturing process
US7645186B1 (en) * 2008-07-18 2010-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad manufacturing assembly
TWM352127U (en) * 2008-08-29 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
TWM352126U (en) * 2008-10-23 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
JP6004941B2 (ja) 2009-12-30 2016-10-12 スリーエム イノベイティブ プロパティズ カンパニー 相分離したポリマーブレンドを含む研磨パッド並びにその製造及び使用方法
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
US8835915B2 (en) 2010-11-22 2014-09-16 3M Innovative Properties Company Assembly and electronic devices including the same
US9067299B2 (en) 2012-04-25 2015-06-30 Applied Materials, Inc. Printed chemical mechanical polishing pad
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
JP6016301B2 (ja) 2013-02-13 2016-10-26 昭和電工株式会社 単結晶SiC基板の表面加工方法、その製造方法及び単結晶SiC基板の表面加工用研削プレート
US9238296B2 (en) 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
US9233451B2 (en) 2013-05-31 2016-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad stack
US9238295B2 (en) 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical window polishing pad
US9102034B2 (en) 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
TWI626118B (zh) 2014-05-07 2018-06-11 Cabot Microelectronics Corporation 供cmp使用之多層拋光墊、生產多層拋光墊之方法、化學機械拋光裝置、及拋光工件之方法
CN108701610B (zh) 2016-03-09 2023-06-02 应用材料公司 增材制造中制造形状的校正
US11137243B2 (en) 2016-09-20 2021-10-05 Applied Materials, Inc. Two step curing of polishing pad material in additive manufacturing
US10596763B2 (en) 2017-04-21 2020-03-24 Applied Materials, Inc. Additive manufacturing with array of energy sources
US10882160B2 (en) 2017-05-25 2021-01-05 Applied Materials, Inc. Correction of fabricated shapes in additive manufacturing using sacrificial material
US10967482B2 (en) 2017-05-25 2021-04-06 Applied Materials, Inc. Fabrication of polishing pad by additive manufacturing onto mold
CN112338820B (zh) * 2020-10-27 2021-10-29 湖北鼎汇微电子材料有限公司 一种抛光垫及其制备方法、应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504457A (en) * 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US3499250A (en) * 1967-04-07 1970-03-10 Geoscience Instr Corp Polishing apparatus
DE2710916B2 (de) * 1977-03-12 1979-04-26 Continental Gummi-Werke Ag, 3000 Hannover Elastischer, zelliger Gummikörper und Verfahren zu seiner Herstellung
US4512113A (en) * 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4879258A (en) * 1988-08-31 1989-11-07 Texas Instruments Incorporated Integrated circuit planarization by mechanical polishing
DE69110456T2 (de) * 1990-03-22 1995-12-14 Westech Systems Inc Vorrichtung zum zwischenschichtplanieren von halbleitern.
EP0465868B1 (en) * 1990-06-29 1996-10-02 National Semiconductor Corporation Controlled compliance polishing pad

Also Published As

Publication number Publication date
DE69308915D1 (de) 1997-04-24
TW222033B (cg-RX-API-DMAC10.html) 1994-04-01
EP0555660A2 (en) 1993-08-18
CN1076152A (zh) 1993-09-15
JP3455556B2 (ja) 2003-10-14
US5257478A (en) 1993-11-02
EP0555660B1 (en) 1997-03-19
KR100265660B1 (ko) 2000-11-01
JPH0621028A (ja) 1994-01-28
KR930017105A (ko) 1993-08-30
EP0555660A3 (cg-RX-API-DMAC10.html) 1994-03-23

Similar Documents

Publication Publication Date Title
DE69308915T2 (de) Vorrichtung zum Planieren von Zwischenschichten von Halbleitermaterial
DE68909168T2 (de) Polieren von Wafern in einem Flüssigkeitsbad.
DE60124252T2 (de) Zweistufiges chemisch-mechanisches polierverfahren
DE69919230T2 (de) Verfahren zur oberflächenmodifizierung von einem strukturierten wafer
DE602004012864T2 (de) In-situ-aktivierung eines dreidimensionalen festgelegten schleifkörpers
DE69206685T2 (de) Poliermaschine mit einem gespannten Feinschleifband und einem verbesserten Werkstückträgerkopf
DE19629286B4 (de) Polierkissen und Poliervorrichtung
DE60106084T2 (de) Polierkissen und anwendungsverfahren dafür
DE69720212T2 (de) Verfahren zur chemisch-mechanischen planarisierung von stopschicht halbleiterscheiben
DE69912307T2 (de) Trägerplatte mit randsteuerung für chemisch-mechanisches polieren
DE69827147T2 (de) Verfahren zum herstellen von einem polierkissen
DE69937181T2 (de) Polierschleifscheibe und substrat polierverfahren mit hilfe dieser schleifscheibe
DE69204559T2 (de) Poliermaschine mit einem verbesserten Werkstückträger.
DE60306785T2 (de) Polierkissen
DE60201515T2 (de) Polierscheibe mit endpunkterfassungsöffnung
DE69904074T2 (de) Verfahren und vorrichtung zum polieren von halbleiterscheiben
DE19828477A1 (de) Verfahren und Vorrichtung zum chemischen mechanischen Ebnen unter Einsatz einer mikroreplizierten Oberfläche
DE69110456T2 (de) Vorrichtung zum zwischenschichtplanieren von halbleitern.
DE102008004874A1 (de) Polierkissen mit Rillen zum Halten einer Aufschlämmung auf der Kissentextur
DE112016004787T5 (de) Halbleiter-Wafer-Prozessierungsverfahren
DE69122441T2 (de) Polierscheibe mit eingestellter Schmiegsamkeit
EP0264700A1 (de) Verfahren zum Anbringen einer umlaufenden Hohlkehle am Rand einer Halbleiterscheibe eines Leistungshalbleiter-Bauelements
DE4302067C2 (de) Verfahren zur chemisch-mechanischen Planierung (CMP) eines Halbleiter-Wafers
DE69610821T2 (de) Chemisch-mechanisch polieren mit gebogenen traegern
DE60032423T2 (de) Verfahren und Einrichtung zum Polieren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R071 Expiry of right

Ref document number: 555660

Country of ref document: EP