DE69223167D1 - Statische Direktzugriffsspeicheranordnung - Google Patents

Statische Direktzugriffsspeicheranordnung

Info

Publication number
DE69223167D1
DE69223167D1 DE69223167T DE69223167T DE69223167D1 DE 69223167 D1 DE69223167 D1 DE 69223167D1 DE 69223167 T DE69223167 T DE 69223167T DE 69223167 T DE69223167 T DE 69223167T DE 69223167 D1 DE69223167 D1 DE 69223167D1
Authority
DE
Germany
Prior art keywords
random access
access memory
memory array
static random
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223167T
Other languages
English (en)
Other versions
DE69223167T2 (de
Inventor
Hirotada Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69223167D1 publication Critical patent/DE69223167D1/de
Application granted granted Critical
Publication of DE69223167T2 publication Critical patent/DE69223167T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
DE69223167T 1991-03-28 1992-03-27 Statische Direktzugriffsspeicheranordnung Expired - Fee Related DE69223167T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9342991 1991-03-28
JP4019231A JP3015186B2 (ja) 1991-03-28 1992-02-04 半導体記憶装置とそのデータの読み出しおよび書き込み方法

Publications (2)

Publication Number Publication Date
DE69223167D1 true DE69223167D1 (de) 1998-01-02
DE69223167T2 DE69223167T2 (de) 1998-04-23

Family

ID=26356059

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69233082T Expired - Fee Related DE69233082T2 (de) 1991-03-28 1992-03-27 Statische Direktzugriffsspeicheranordnung
DE69223167T Expired - Fee Related DE69223167T2 (de) 1991-03-28 1992-03-27 Statische Direktzugriffsspeicheranordnung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69233082T Expired - Fee Related DE69233082T2 (de) 1991-03-28 1992-03-27 Statische Direktzugriffsspeicheranordnung

Country Status (5)

Country Link
US (1) US5341327A (de)
EP (2) EP0506089B1 (de)
JP (1) JP3015186B2 (de)
KR (1) KR960000718B1 (de)
DE (2) DE69233082T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69330302T2 (de) * 1992-09-04 2002-01-10 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung
JP3609868B2 (ja) * 1995-05-30 2005-01-12 株式会社ルネサステクノロジ スタティック型半導体記憶装置
JP3428240B2 (ja) * 1995-07-31 2003-07-22 三菱電機株式会社 半導体記憶装置
RU2156013C2 (ru) * 1996-03-28 2000-09-10 Интел Корпорейшн Конструкция ячейки памяти с вертикально расположенными друг над другом пересечениями
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP4501164B2 (ja) * 1998-05-01 2010-07-14 ソニー株式会社 半導体記憶装置
KR100265770B1 (ko) * 1998-06-12 2000-09-15 윤종용 워드라인 보다 짧은 비트라인을 갖는 에스램 셀
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6670642B2 (en) * 2002-01-22 2003-12-30 Renesas Technology Corporation. Semiconductor memory device using vertical-channel transistors
KR100656497B1 (ko) 2004-02-09 2006-12-11 삼성에스디아이 주식회사 유기전계발광표시장치 및 그의 제조방법
JP2007027194A (ja) * 2005-07-12 2007-02-01 Renesas Technology Corp 半導体装置
US8049253B2 (en) 2007-07-11 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8669186B2 (en) * 2012-01-26 2014-03-11 Globalfoundries Inc. Methods of forming SRAM devices using sidewall image transfer techniques
JP5856227B2 (ja) * 2014-05-26 2016-02-09 ルネサスエレクトロニクス株式会社 半導体装置
CN110364566B (zh) * 2019-07-19 2023-07-25 京东方科技集团股份有限公司 晶体管及其制作方法、晶体管器件、显示基板及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770623B2 (ja) * 1988-07-08 1995-07-31 三菱電機株式会社 スタティックランダムアクセスメモリ装置
US4872141A (en) * 1988-09-12 1989-10-03 General Electric Company Radiation hard memory cell having monocrystalline and non-monocrystalline inverters
JP2825520B2 (ja) * 1989-03-24 1998-11-18 株式会社日立製作所 半導体装置
DE69011038T2 (de) * 1989-11-02 1995-01-05 Seiko Epson Corp Integrierte Halbleiterschaltung.
US5198683A (en) * 1991-05-03 1993-03-30 Motorola, Inc. Integrated circuit memory device and structural layout thereof

Also Published As

Publication number Publication date
KR960000718B1 (ko) 1996-01-11
EP0716452A3 (de) 1998-09-30
US5341327A (en) 1994-08-23
JP3015186B2 (ja) 2000-03-06
KR920018943A (ko) 1992-10-22
EP0506089A3 (en) 1993-03-24
EP0716452B1 (de) 2003-05-28
EP0506089B1 (de) 1997-11-19
EP0506089A2 (de) 1992-09-30
EP0716452A2 (de) 1996-06-12
JPH0555528A (ja) 1993-03-05
DE69233082T2 (de) 2004-02-12
DE69223167T2 (de) 1998-04-23
DE69233082D1 (de) 2003-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee