DE69221775D1 - Verfahren zur Erzeugung eines Fotolackmusters auf einem Halbleitersubstrat durch Lichtbestrahlung - Google Patents

Verfahren zur Erzeugung eines Fotolackmusters auf einem Halbleitersubstrat durch Lichtbestrahlung

Info

Publication number
DE69221775D1
DE69221775D1 DE69221775T DE69221775T DE69221775D1 DE 69221775 D1 DE69221775 D1 DE 69221775D1 DE 69221775 T DE69221775 T DE 69221775T DE 69221775 T DE69221775 T DE 69221775T DE 69221775 D1 DE69221775 D1 DE 69221775D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor substrate
light irradiation
photoresist pattern
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69221775T
Other languages
English (en)
Other versions
DE69221775T2 (de
Inventor
Hiroki Tabuchi
Katsuji Iguchi
Makoto Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3323442A external-priority patent/JP2888683B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69221775D1 publication Critical patent/DE69221775D1/de
Publication of DE69221775T2 publication Critical patent/DE69221775T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69221775T 1991-06-07 1992-05-14 Verfahren zur Erzeugung eines Fotolackmusters auf einem Halbleitersubstrat durch Lichtbestrahlung Expired - Fee Related DE69221775T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13679991 1991-06-07
JP3323442A JP2888683B2 (ja) 1991-06-07 1991-12-06 光露光によるレジストマスクパターン形成方法

Publications (2)

Publication Number Publication Date
DE69221775D1 true DE69221775D1 (de) 1997-10-02
DE69221775T2 DE69221775T2 (de) 1998-03-12

Family

ID=26470299

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221775T Expired - Fee Related DE69221775T2 (de) 1991-06-07 1992-05-14 Verfahren zur Erzeugung eines Fotolackmusters auf einem Halbleitersubstrat durch Lichtbestrahlung

Country Status (3)

Country Link
US (1) US5330862A (de)
EP (1) EP0517382B1 (de)
DE (1) DE69221775T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2837063B2 (ja) * 1993-06-04 1998-12-14 シャープ株式会社 レジストパターンの形成方法
TW270219B (de) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
TW522291B (en) * 2002-06-28 2003-03-01 United Microelectronics Corp Structure of phase shifting mask
JP2007149768A (ja) * 2005-11-24 2007-06-14 Nec Electronics Corp 半導体装置の製造方法
JP5132625B2 (ja) * 2009-04-10 2013-01-30 株式会社東芝 パターン形成方法
JP5863343B2 (ja) * 2011-09-01 2016-02-16 キヤノン株式会社 半導体装置の製造方法
US9618664B2 (en) 2015-04-15 2017-04-11 Finisar Corporation Partially etched phase-transforming optical element
US10539723B2 (en) 2016-10-19 2020-01-21 Finisar Corporation Phase-transforming optical reflector formed by partial etching or by partial etching with reflow

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651738A (en) * 1979-10-03 1981-05-09 Oki Electric Ind Co Ltd Minute pattern forming method
JPS6459884A (en) * 1987-08-31 1989-03-07 Fujitsu Ltd Forming of shift type diffraction grating pattern
US5015559A (en) * 1988-07-26 1991-05-14 Matsushita Electric Industrial Co., Ltd. Process for forming a fine resist pattern
JPH03237458A (ja) * 1990-02-14 1991-10-23 Mitsubishi Electric Corp 微細パターン形成方法
JPH03259257A (ja) * 1990-03-09 1991-11-19 Mitsubishi Electric Corp 微細パターン形成方法

Also Published As

Publication number Publication date
DE69221775T2 (de) 1998-03-12
US5330862A (en) 1994-07-19
EP0517382A1 (de) 1992-12-09
EP0517382B1 (de) 1997-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee