JPS6459884A - Forming of shift type diffraction grating pattern - Google Patents
Forming of shift type diffraction grating patternInfo
- Publication number
- JPS6459884A JPS6459884A JP62215091A JP21509187A JPS6459884A JP S6459884 A JPS6459884 A JP S6459884A JP 62215091 A JP62215091 A JP 62215091A JP 21509187 A JP21509187 A JP 21509187A JP S6459884 A JPS6459884 A JP S6459884A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- phase shift
- light
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To form an accurate and uniform shift diffraction grating pattern by utilizing a resist which is not sensitized by light wavelength to be used when performing patterning of phase shift layer as a resist layer when performing interference exposure of resist layer on substrate through a phase shift layer of a patterned specified thickness. CONSTITUTION:A positive resist layer 2 for far ultraviolet rays to record a diffraction grating pattern, a polyvinyl alcohol layer 3 as a buffer layer, and a phase shift layer 4 are formed on a substrate 1. Then, patterning is performed only to a phase shift layer using normal photolightography technique so that only the part to be shifted may remain. By providing asymmetrical inciding angle two fluxes of light interference path light from an obtained phase shift layer pattern 4a and a PVA layer 3 (2 fluxes of light: 6a, 6b), recording is performed by shifting the phase of pattern of certain part of the shift layer 4 if the positive resist layer 2 is exposed to light through the polyvinyl alcohol layer 3 which is the buffer layer each. Then, the phase shift layer pattern 4a and the polyvinyl alcohol layer 3 which is the buffer layer are eliminated. Then, the pattern is developed and is transferred to the substrate 1. A resist pattern 2a is shifted symmetrically at the position A in Figure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215091A JPS6459884A (en) | 1987-08-31 | 1987-08-31 | Forming of shift type diffraction grating pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215091A JPS6459884A (en) | 1987-08-31 | 1987-08-31 | Forming of shift type diffraction grating pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459884A true JPS6459884A (en) | 1989-03-07 |
Family
ID=16666603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62215091A Pending JPS6459884A (en) | 1987-08-31 | 1987-08-31 | Forming of shift type diffraction grating pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459884A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330862A (en) * | 1991-06-07 | 1994-07-19 | Sharp Kabushiki Kaisha | Method for forming resist mask pattern by light exposure having a phase shifter pattern comprising convex forms in the resist |
-
1987
- 1987-08-31 JP JP62215091A patent/JPS6459884A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330862A (en) * | 1991-06-07 | 1994-07-19 | Sharp Kabushiki Kaisha | Method for forming resist mask pattern by light exposure having a phase shifter pattern comprising convex forms in the resist |
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