DE69221201T2 - Anzeigevorrichtung mit aktiver Matrix - Google Patents
Anzeigevorrichtung mit aktiver MatrixInfo
- Publication number
- DE69221201T2 DE69221201T2 DE69221201T DE69221201T DE69221201T2 DE 69221201 T2 DE69221201 T2 DE 69221201T2 DE 69221201 T DE69221201 T DE 69221201T DE 69221201 T DE69221201 T DE 69221201T DE 69221201 T2 DE69221201 T2 DE 69221201T2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- display
- scanning
- switching element
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 37
- 230000002950 deficient Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 9
- 230000007547 defect Effects 0.000 description 39
- 239000010408 film Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10236591A JP2669954B2 (ja) | 1991-05-08 | 1991-05-08 | アクティブマトリクス表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69221201D1 DE69221201D1 (de) | 1997-09-04 |
| DE69221201T2 true DE69221201T2 (de) | 1998-02-05 |
Family
ID=14325439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69221201T Expired - Fee Related DE69221201T2 (de) | 1991-05-08 | 1992-05-08 | Anzeigevorrichtung mit aktiver Matrix |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5434686A (enExample) |
| EP (1) | EP0512840B1 (enExample) |
| JP (1) | JP2669954B2 (enExample) |
| KR (1) | KR920022028A (enExample) |
| DE (1) | DE69221201T2 (enExample) |
| TW (1) | TW235375B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0675203A (ja) * | 1992-08-26 | 1994-03-18 | Sharp Corp | 表示装置の駆動回路 |
| US5774099A (en) * | 1995-04-25 | 1998-06-30 | Hitachi, Ltd. | Liquid crystal device with wide viewing angle characteristics |
| KR0182014B1 (ko) * | 1995-08-23 | 1999-05-01 | 김광호 | 액정 표시 장치용 박막트랜지스터 기판 |
| US5995178A (en) * | 1995-10-16 | 1999-11-30 | Sharp Kabushiki Kaisha | Active matrix liquid crystal panel and method for repairing defect therein |
| US6208399B1 (en) | 1997-04-11 | 2001-03-27 | Hitachi, Ltd. | Liquid crystal display device |
| JP3966614B2 (ja) | 1997-05-29 | 2007-08-29 | 三星電子株式会社 | 広視野角液晶表示装置 |
| KR100590741B1 (ko) * | 1998-04-03 | 2006-09-18 | 삼성전자주식회사 | 액정 표시 장치 |
| KR100354904B1 (ko) | 1998-05-19 | 2002-12-26 | 삼성전자 주식회사 | 광시야각액정표시장치 |
| KR100336888B1 (ko) * | 1998-09-07 | 2003-06-12 | 주식회사 현대 디스플레이 테크놀로지 | 액정표시소자 |
| JP3450195B2 (ja) * | 1998-09-07 | 2003-09-22 | 富士通ディスプレイテクノロジーズ株式会社 | 液晶表示装置及びその修復方法 |
| US7280090B2 (en) * | 2000-12-22 | 2007-10-09 | Electronics For Imaging, Inc. | Methods and apparatus for repairing inoperative pixels in a display |
| US6855937B2 (en) * | 2001-05-18 | 2005-02-15 | Canon Kabushiki Kaisha | Image pickup apparatus |
| JP4248306B2 (ja) | 2002-06-17 | 2009-04-02 | シャープ株式会社 | 液晶表示装置 |
| KR100840326B1 (ko) | 2002-06-28 | 2008-06-20 | 삼성전자주식회사 | 액정 표시 장치 및 그에 사용되는 박막 트랜지스터 기판 |
| JP2004038041A (ja) * | 2002-07-05 | 2004-02-05 | Chi Mei Electronics Corp | 画像表示素子及び画像表示装置 |
| CN100401342C (zh) | 2003-01-27 | 2008-07-09 | 东芝松下显示技术有限公司 | 制造有机el显示器的方法 |
| KR100569718B1 (ko) * | 2003-05-20 | 2006-04-10 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 |
| US7206048B2 (en) | 2003-08-13 | 2007-04-17 | Samsung Electronics Co., Ltd. | Liquid crystal display and panel therefor |
| JP2007003709A (ja) * | 2005-06-22 | 2007-01-11 | Sharp Corp | アクティブマトリクス基板、表示装置およびその欠陥修正方法 |
| US8592262B2 (en) * | 2006-11-16 | 2013-11-26 | Au Optronics Corporation | Residue isolation process in TFT LCD fabrication |
| CN102759833B (zh) * | 2012-07-27 | 2015-05-20 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
| WO2016002576A1 (ja) * | 2014-07-03 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
| CN105954950A (zh) * | 2016-07-07 | 2016-09-21 | 深圳市华星光电技术有限公司 | 一种阵列基板及阵列基板的扫描线修补方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4775861A (en) * | 1984-11-02 | 1988-10-04 | Nec Corporation | Driving circuit of a liquid crystal display panel which equivalently reduces picture defects |
| EP0182645B1 (en) * | 1984-11-16 | 1991-01-23 | Matsushita Electric Industrial Co., Ltd. | Active matrix circuit for liquid crystal displays |
| FR2581783B1 (fr) * | 1985-05-07 | 1989-05-12 | Commissariat Energie Atomique | Dispositif d'affichage a matrice active et a commande integree comprenant deux familles d'electrodes lignes et deux familles d'electrodes colonnes par point image et son procede de commande |
| JPS63262621A (ja) * | 1987-04-21 | 1988-10-28 | Alps Electric Co Ltd | 薄膜トランジスタアレイのトリミング方法 |
| EP0365244B1 (en) * | 1988-10-17 | 1995-06-21 | Sharp Kabushiki Kaisha | An active matrix substrate |
| JPH02124538A (ja) * | 1988-11-02 | 1990-05-11 | Fujitsu Ltd | アクティブマトリクス型液晶表示装置 |
| US5076666A (en) * | 1988-12-06 | 1991-12-31 | Sharp Kabushiki Kaisha | Active matrix display apparatus with drain electrode extensions |
| US4968119A (en) * | 1989-01-10 | 1990-11-06 | David Sarnoff Research Center, Inc. | High-density liquid-crystal active dot-matrix display structure |
| JPH0324524A (ja) * | 1989-06-21 | 1991-02-01 | Sharp Corp | アクティブマトリクス表示装置 |
| US5343216A (en) * | 1989-01-31 | 1994-08-30 | Sharp Kabushiki Kaisha | Active matrix substrate and active matrix display apparatus |
| EP0381428B1 (en) * | 1989-01-31 | 1995-06-21 | Sharp Kabushiki Kaisha | Active matrix substrate and active matrix display display apparatus |
| JPH02251930A (ja) * | 1989-03-27 | 1990-10-09 | Matsushita Electric Ind Co Ltd | アクティブマトリックスアレイ |
| US5062690A (en) * | 1989-06-30 | 1991-11-05 | General Electric Company | Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links |
| JPH0333724A (ja) * | 1989-06-30 | 1991-02-14 | Hitachi Ltd | 液晶表示装置 |
| JPH0820644B2 (ja) * | 1989-09-19 | 1996-03-04 | シャープ株式会社 | マトリクス型液晶表示基板の製造方法 |
| JPH07122719B2 (ja) * | 1990-05-11 | 1995-12-25 | シャープ株式会社 | アクティブマトリクス型表示装置 |
| JPH0830826B2 (ja) * | 1990-05-14 | 1996-03-27 | シャープ株式会社 | アクティブマトリクス型表示装置の製造方法 |
| JPH0820646B2 (ja) * | 1990-05-11 | 1996-03-04 | シャープ株式会社 | アクティブマトリクス型表示装置 |
| JPH0421823A (ja) * | 1990-05-16 | 1992-01-24 | Hosiden Corp | 液晶表示素子の点欠陥の黒欠陥化法及び液晶表示素子 |
-
1991
- 1991-05-08 JP JP10236591A patent/JP2669954B2/ja not_active Expired - Lifetime
-
1992
- 1992-05-07 TW TW081103574A patent/TW235375B/zh active
- 1992-05-08 DE DE69221201T patent/DE69221201T2/de not_active Expired - Fee Related
- 1992-05-08 EP EP92304133A patent/EP0512840B1/en not_active Expired - Lifetime
- 1992-05-08 KR KR1019920007819A patent/KR920022028A/ko not_active Ceased
-
1993
- 1993-09-09 US US08/123,847 patent/US5434686A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0512840A2 (en) | 1992-11-11 |
| TW235375B (enExample) | 1994-12-01 |
| US5434686A (en) | 1995-07-18 |
| EP0512840B1 (en) | 1997-07-30 |
| DE69221201D1 (de) | 1997-09-04 |
| JPH04331922A (ja) | 1992-11-19 |
| EP0512840A3 (en) | 1993-02-24 |
| KR920022028A (ko) | 1992-12-19 |
| JP2669954B2 (ja) | 1997-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |