DE69220257T2 - i-Strahlen empfindliche, positiv arbeitende Photolackzusammensetzung - Google Patents

i-Strahlen empfindliche, positiv arbeitende Photolackzusammensetzung

Info

Publication number
DE69220257T2
DE69220257T2 DE69220257T DE69220257T DE69220257T2 DE 69220257 T2 DE69220257 T2 DE 69220257T2 DE 69220257 T DE69220257 T DE 69220257T DE 69220257 T DE69220257 T DE 69220257T DE 69220257 T2 DE69220257 T2 DE 69220257T2
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
rays sensitive
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69220257T
Other languages
English (en)
Other versions
DE69220257D1 (de
DE69220257T3 (de
Inventor
Toru Kajita
Toshiyuki Ota
Yoshiji Yumoto
Takao Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26359856&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69220257(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Publication of DE69220257D1 publication Critical patent/DE69220257D1/de
Publication of DE69220257T2 publication Critical patent/DE69220257T2/de
Application granted granted Critical
Publication of DE69220257T3 publication Critical patent/DE69220257T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/24—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with mixtures of two or more phenols which are not covered by only one of the groups C08G8/10 - C08G8/20
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69220257T 1991-01-24 1992-01-24 i-Strahlen empfindliche, positiv arbeitende Photolackzusammensetzung Expired - Lifetime DE69220257T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2260491 1991-01-24
JP2260391 1991-01-24

Publications (3)

Publication Number Publication Date
DE69220257D1 DE69220257D1 (de) 1997-07-17
DE69220257T2 true DE69220257T2 (de) 1997-12-18
DE69220257T3 DE69220257T3 (de) 2002-06-13

Family

ID=26359856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220257T Expired - Lifetime DE69220257T3 (de) 1991-01-24 1992-01-24 i-Strahlen empfindliche, positiv arbeitende Photolackzusammensetzung

Country Status (4)

Country Link
US (1) US5413896A (de)
EP (1) EP0496640B2 (de)
KR (1) KR100225207B1 (de)
DE (1) DE69220257T3 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05249666A (ja) * 1992-03-05 1993-09-28 Sumitomo Chem Co Ltd ポジ型レジスト組成物
EP0677182B1 (de) * 1992-12-29 2000-03-08 Clariant Finance (BVI) Limited Verfahren zur herstellung eines novolakharzes für anwendungen in photoresists
DE4401940A1 (de) * 1994-01-24 1995-07-27 Hoechst Ag Positiv arbeitendes Aufzeichnungsmaterial mit verbesserter Entwickelbarkeit
US5370988A (en) * 1994-02-28 1994-12-06 Minnesota Mining And Manufacturing Company Print stabilizers and antifoggants for photothermography
JP3434340B2 (ja) * 1994-03-29 2003-08-04 東京応化工業株式会社 高感度ポジ型ホトレジスト組成物
US5773200A (en) * 1994-06-23 1998-06-30 Shin-Etsu Chemical Co., Ltd. Positive resist composition suitable for lift-off technique and pattern forming method
EP0801327B1 (de) * 1994-12-28 2002-10-16 Nippon Zeon Co., Ltd. Positivarbeitende resistzusammensetzung
JPH0990622A (ja) * 1995-09-22 1997-04-04 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP3287234B2 (ja) * 1996-09-19 2002-06-04 信越化学工業株式会社 リフトオフ法用ポジ型レジスト組成物及びパターン形成方法
KR100560021B1 (ko) * 1996-12-11 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
JP3633179B2 (ja) * 1997-01-27 2005-03-30 Ｊｓｒ株式会社 ポジ型フォトレジスト組成物
US5985507A (en) * 1998-02-18 1999-11-16 Olin Microelectronic Chemicals, Inc. Selected high thermal novolaks and positive-working radiation-sensitive compositions
JP2002296772A (ja) * 2001-04-02 2002-10-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
US6905809B2 (en) 2003-04-01 2005-06-14 Clariant Finance (Bvi) Limited Photoresist compositions
US6790582B1 (en) 2003-04-01 2004-09-14 Clariant Finance Bvi Limited Photoresist compositions
JP2010131954A (ja) * 2007-12-19 2010-06-17 Canon Inc 液体吐出ヘッドの製造方法
KR20100077229A (ko) * 2008-12-29 2010-07-08 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
KR101146622B1 (ko) * 2009-08-31 2012-05-16 금호석유화학 주식회사 감광성 화합물 및 이를 포함하는 감광성 조성물
TWI485521B (zh) * 2010-06-28 2015-05-21 Everlight Chem Ind Corp 正型感光樹脂組成物
JP5723854B2 (ja) * 2011-12-28 2015-05-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いた感活性光線性又は感放射線性膜及びパターン形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141441A (ja) * 1984-12-14 1986-06-28 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
EP0227487B1 (de) * 1985-12-27 1992-07-15 Japan Synthetic Rubber Co., Ltd. Strahlungsempfindliche positiv arbeitende Kunststoffzusammensetzung
EP0239423B1 (de) * 1986-03-28 1996-03-20 Japan Synthetic Rubber Co., Ltd. Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JP2693472B2 (ja) * 1987-11-26 1997-12-24 株式会社東芝 レジスト
DE68928823T2 (de) * 1988-07-07 1999-02-25 Sumitomo Chemical Co Strahlungsempfindliche, positiv arbeitende Resistzusammensetzung
JPH0263052A (ja) * 1988-08-30 1990-03-02 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物およびこれを用いたレジストパターンの製造法
JP2623778B2 (ja) * 1988-10-18 1997-06-25 日本合成ゴム株式会社 感放射線性樹脂組成物
US5324620A (en) * 1989-09-08 1994-06-28 Ocg Microeletronic Materials, Inc. Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde
EP0701169B1 (de) † 1989-09-08 1998-12-30 Olin Microelectronic Chemicals, Inc. Vollständig substituierte Novalak-Polymere enthaltende Strahlungsempfindliche Zusammensetzungen
JPH03155554A (ja) * 1989-11-14 1991-07-03 Japan Synthetic Rubber Co Ltd 放射線感応性樹脂組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
KR0184870B1 (ko) * 1990-02-20 1999-04-01 아사구라 다기오 감방사선성 수지 조성물
US5108870A (en) * 1990-08-02 1992-04-28 Morton International, Inc. Positive-working photoresist composition containing purified broadband dye and process of using

Also Published As

Publication number Publication date
DE69220257D1 (de) 1997-07-17
KR920015160A (ko) 1992-08-26
EP0496640A1 (de) 1992-07-29
US5413896A (en) 1995-05-09
EP0496640B1 (de) 1997-06-11
DE69220257T3 (de) 2002-06-13
KR100225207B1 (ko) 1999-10-15
EP0496640B2 (de) 2001-09-19

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: JSR CORP., TOKIO/TOKYO, JP

8366 Restricted maintained after opposition proceedings
8328 Change in the person/name/address of the agent

Representative=s name: MOSELPATENT TRIERPATENT, 54290 TRIER

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE SERWE & DR. WAGNER, 54290 TRIER