DE69121739D1 - Strahlungsempfindliche, positiv arbeitende Resistmasse - Google Patents

Strahlungsempfindliche, positiv arbeitende Resistmasse

Info

Publication number
DE69121739D1
DE69121739D1 DE69121739T DE69121739T DE69121739D1 DE 69121739 D1 DE69121739 D1 DE 69121739D1 DE 69121739 T DE69121739 T DE 69121739T DE 69121739 T DE69121739 T DE 69121739T DE 69121739 D1 DE69121739 D1 DE 69121739D1
Authority
DE
Germany
Prior art keywords
radiation sensitive
positive working
working resist
resist
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69121739T
Other languages
English (en)
Other versions
DE69121739T2 (de
Inventor
Takeshi Hioki
Seiko Kurio
Yasunori Uetani
Yasunori Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of DE69121739D1 publication Critical patent/DE69121739D1/de
Application granted granted Critical
Publication of DE69121739T2 publication Critical patent/DE69121739T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/24—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with mixtures of two or more phenols which are not covered by only one of the groups C08G8/10 - C08G8/20

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69121739T 1990-02-23 1991-02-22 Strahlungsempfindliche, positiv arbeitende Resistmasse Expired - Fee Related DE69121739T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4393490 1990-02-23
JP5008990 1990-02-28

Publications (2)

Publication Number Publication Date
DE69121739D1 true DE69121739D1 (de) 1996-10-10
DE69121739T2 DE69121739T2 (de) 1997-03-13

Family

ID=26383767

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121739T Expired - Fee Related DE69121739T2 (de) 1990-02-23 1991-02-22 Strahlungsempfindliche, positiv arbeitende Resistmasse

Country Status (6)

Country Link
US (1) US5403696A (de)
EP (1) EP0443607B1 (de)
KR (1) KR920000010A (de)
CA (1) CA2036812A1 (de)
DE (1) DE69121739T2 (de)
TW (1) TW202504B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391471B2 (ja) * 1992-02-25 2003-03-31 住友化学工業株式会社 ポジ型レジスト組成物
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
JPH0990622A (ja) * 1995-09-22 1997-04-04 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
JP3562673B2 (ja) * 1996-01-22 2004-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP4006815B2 (ja) 1997-06-11 2007-11-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR20000033760A (ko) * 1998-11-25 2000-06-15 유현식 고압 전력선 절연카바용 난연성 폴리올레핀 수지 조성물
JP4150834B2 (ja) * 1999-03-04 2008-09-17 Ｊｓｒ株式会社 感光性樹脂組成物、感光性樹脂膜およびこれらを用いたバンプ形成方法
US6733949B2 (en) * 2002-04-11 2004-05-11 Clariant Finance (Bvi) Limited Novolak resin mixtures and photosensitive compositions comprising the same
KR102295204B1 (ko) * 2019-03-06 2021-08-31 (주)삼일씨앤에프 난연도료 및 그의 제조방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723253B2 (de) * 1974-03-25 1982-05-18
US4123279A (en) * 1974-03-25 1978-10-31 Fuji Photo Film Co., Ltd. Light-sensitive o-quinonediazide containing planographic printing plate
CH621416A5 (de) * 1975-03-27 1981-01-30 Hoechst Ag
EP0054258B1 (de) * 1980-12-17 1986-03-05 Konica Corporation Lichtempfindliche Zusammensetzungen
US4460674A (en) * 1981-01-16 1984-07-17 Konishiroku Photo Industry Co., Ltd. Posi-type quinone diazide photosensitive composition with sensitizer therefor
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
JPS616647A (ja) * 1984-06-20 1986-01-13 Konishiroku Photo Ind Co Ltd ポジ型感光性平版印刷版用感光性組成物
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
JPH0654384B2 (ja) * 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
DE3751743T2 (de) * 1986-03-28 1996-11-14 Japan Synthetic Rubber Co Ltd Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JPH0656487B2 (ja) * 1986-05-02 1994-07-27 東京応化工業株式会社 ポジ型ホトレジスト用組成物
US4871644A (en) * 1986-10-01 1989-10-03 Ciba-Geigy Corporation Photoresist compositions with a bis-benzotriazole
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
JPH01180535A (ja) * 1988-01-12 1989-07-18 Konica Corp 感光性組成物
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
US5001040A (en) * 1988-07-11 1991-03-19 Olin Hunt Specialty Products Inc. Process of forming resist image in positive photoresist with thermally stable phenolic resin
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements

Also Published As

Publication number Publication date
EP0443607A2 (de) 1991-08-28
TW202504B (de) 1993-03-21
EP0443607B1 (de) 1996-09-04
EP0443607A3 (en) 1991-10-30
KR920000010A (ko) 1992-01-10
DE69121739T2 (de) 1997-03-13
US5403696A (en) 1995-04-04
CA2036812A1 (en) 1991-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee