DE69219951T2 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69219951T2
DE69219951T2 DE69219951T DE69219951T DE69219951T2 DE 69219951 T2 DE69219951 T2 DE 69219951T2 DE 69219951 T DE69219951 T DE 69219951T DE 69219951 T DE69219951 T DE 69219951T DE 69219951 T2 DE69219951 T2 DE 69219951T2
Authority
DE
Germany
Prior art keywords
comparison
selection means
memory device
semiconductor memory
redundant memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219951T
Other languages
English (en)
Other versions
DE69219951D1 (de
Inventor
Akira Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69219951D1 publication Critical patent/DE69219951D1/de
Publication of DE69219951T2 publication Critical patent/DE69219951T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
DE69219951T 1991-06-27 1992-06-25 Halbleiterspeicher Expired - Fee Related DE69219951T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18310291 1991-06-27

Publications (2)

Publication Number Publication Date
DE69219951D1 DE69219951D1 (de) 1997-07-03
DE69219951T2 true DE69219951T2 (de) 1998-01-15

Family

ID=16129810

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219951T Expired - Fee Related DE69219951T2 (de) 1991-06-27 1992-06-25 Halbleiterspeicher

Country Status (5)

Country Link
US (1) US5258953A (de)
EP (1) EP0520449B1 (de)
JP (1) JP2888034B2 (de)
KR (1) KR960000680B1 (de)
DE (1) DE69219951T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960009996B1 (ko) * 1992-08-24 1996-07-25 금성일렉트론 주식회사 반도체 소자의 리페어장치 및 그 배치방법
JP2734315B2 (ja) * 1992-09-24 1998-03-30 日本電気株式会社 半導体メモリ装置
US5384746A (en) * 1994-01-28 1995-01-24 Texas Instruments Incorporated Circuit and method for storing and retrieving data
KR0177740B1 (ko) * 1994-11-17 1999-04-15 김광호 반도체 메모리 장치의 리던던시 회로 및 그 방법
US5787091A (en) * 1995-06-13 1998-07-28 Texas Instruments Incorporated Shared redundancy programming of memory with plural access ports
KR0177406B1 (ko) * 1996-04-12 1999-04-15 문정환 스페어 디코더 회로
US6209071B1 (en) * 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
KR100258975B1 (ko) * 1996-12-10 2000-06-15 윤종용 반도체 메모리장치
US5859562A (en) * 1996-12-24 1999-01-12 Actel Corporation Programming circuit for antifuses using bipolar and SCR devices
US5889414A (en) * 1997-04-28 1999-03-30 Mosel Vitelic Corporation Programmable circuits
US6263448B1 (en) 1997-10-10 2001-07-17 Rambus Inc. Power control system for synchronous memory device
JP2000113695A (ja) 1998-10-01 2000-04-21 Mitsubishi Electric Corp 同期型半導体記憶装置
US6163492A (en) 1998-10-23 2000-12-19 Mosel Vitelic, Inc. Programmable latches that include non-volatile programmable elements
KR100356774B1 (ko) 2000-11-22 2002-10-18 삼성전자 주식회사 반도체 메모리 장치의 결함 어드레스 저장 회로
JP2002216493A (ja) * 2001-01-23 2002-08-02 Mitsubishi Electric Corp 救済修正回路および半導体記憶装置
JP2003217294A (ja) 2001-11-16 2003-07-31 Fujitsu Ltd 半導体記憶装置、及び冗長判定方法
KR100401236B1 (ko) * 2001-12-04 2003-10-17 주식회사 하이닉스반도체 플래쉬 메모리 장치
DE10211571B4 (de) * 2002-03-15 2006-03-02 Infineon Technologies Ag Vorrichtung und Verfahren zur Überwachung eines Zustandes einer elektronischen Komponente, insbesondere einer Sicherung
KR101165027B1 (ko) * 2004-06-30 2012-07-13 삼성전자주식회사 반도체 메모리 장치에서의 리던던시 프로그램 회로
US7098721B2 (en) * 2004-09-01 2006-08-29 International Business Machines Corporation Low voltage programmable eFuse with differential sensing scheme
JP4614775B2 (ja) * 2005-01-14 2011-01-19 パナソニック株式会社 電気ヒューズ回路
KR100821572B1 (ko) * 2005-12-27 2008-04-14 주식회사 하이닉스반도체 반도체 메모리 장치의 컬럼 리던던시 제어 회로
US20090161470A1 (en) * 2007-12-20 2009-06-25 Micron Technology, Inc. Circuit for dynamic readout of fused data in image sensors
KR100925373B1 (ko) * 2008-01-15 2009-11-09 주식회사 하이닉스반도체 반도체 집적 회로의 퓨즈 회로

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346459A (en) * 1980-06-30 1982-08-24 Inmos Corporation Redundancy scheme for an MOS memory
WO1982002793A1 (en) * 1981-02-02 1982-08-19 Otoole James E Semiconductor memory redundant element identification circuit
DE3485188D1 (de) * 1983-03-28 1991-11-28 Fujitsu Ltd Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen.
JPS59203299A (ja) * 1983-05-06 1984-11-17 Nec Corp 冗長ビット付メモリ
DE3588121T2 (de) * 1984-05-31 1997-01-16 Fujitsu Ltd Halbleiterintegrierte Schaltung mit einer Ersatzredundanzschaltung
JPH01119995A (ja) * 1987-11-02 1989-05-12 Toshiba Corp 半導体メモリ

Also Published As

Publication number Publication date
KR960000680B1 (ko) 1996-01-11
JPH05307898A (ja) 1993-11-19
EP0520449A2 (de) 1992-12-30
EP0520449A3 (en) 1995-05-10
KR930001242A (ko) 1993-01-16
DE69219951D1 (de) 1997-07-03
EP0520449B1 (de) 1997-05-28
JP2888034B2 (ja) 1999-05-10
US5258953A (en) 1993-11-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee