DE69216311D1 - Herstellung von einem Dünnschicht-Transistor - Google Patents

Herstellung von einem Dünnschicht-Transistor

Info

Publication number
DE69216311D1
DE69216311D1 DE69216311T DE69216311T DE69216311D1 DE 69216311 D1 DE69216311 D1 DE 69216311D1 DE 69216311 T DE69216311 T DE 69216311T DE 69216311 T DE69216311 T DE 69216311T DE 69216311 D1 DE69216311 D1 DE 69216311D1
Authority
DE
Germany
Prior art keywords
manufacture
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216311T
Other languages
English (en)
Other versions
DE69216311T2 (de
Inventor
Nigel David Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69216311D1 publication Critical patent/DE69216311D1/de
Publication of DE69216311T2 publication Critical patent/DE69216311T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H01L29/786—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L29/66757—
    • H01L29/78621—
    • H01L29/78624—
    • H01L29/78675—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
DE69216311T 1991-06-28 1992-06-19 Herstellung von einem Dünnschicht-Transistor Expired - Fee Related DE69216311T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919114018A GB9114018D0 (en) 1991-06-28 1991-06-28 Thin-film transistor manufacture

Publications (2)

Publication Number Publication Date
DE69216311D1 true DE69216311D1 (de) 1997-02-13
DE69216311T2 DE69216311T2 (de) 1997-06-12

Family

ID=10697510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216311T Expired - Fee Related DE69216311T2 (de) 1991-06-28 1992-06-19 Herstellung von einem Dünnschicht-Transistor

Country Status (8)

Country Link
US (1) US5264383A (de)
EP (1) EP0523768B1 (de)
JP (1) JPH05190568A (de)
KR (1) KR100260063B1 (de)
CA (1) CA2072264A1 (de)
DE (1) DE69216311T2 (de)
GB (1) GB9114018D0 (de)
TW (1) TW232088B (de)

Families Citing this family (59)

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JP2700277B2 (ja) * 1990-06-01 1998-01-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US5930608A (en) 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
JP3173854B2 (ja) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
CA2097388A1 (en) * 1992-07-16 1994-01-17 Susan Nord Bohlke Topographical selective patterns
CN1052569C (zh) 1992-08-27 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
JP3240719B2 (ja) * 1992-12-10 2001-12-25 ソニー株式会社 半導体薄膜結晶の成長方法
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US5985741A (en) * 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
DE69428387T2 (de) * 1993-02-15 2002-07-04 Semiconductor Energy Lab Herstellungsverfahren für eine kristallisierte Halbleiterschicht
US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
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US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
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US6723590B1 (en) 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
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GB9406900D0 (en) * 1994-04-07 1994-06-01 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin -film transistors
US6974763B1 (en) 1994-04-13 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber
KR100279217B1 (ko) * 1994-04-13 2001-02-01 야마자끼 순페이 반도체 장치 형성 방법, 결정성 반도체 막 형성 방법, 박막 트랜지스터 형성 방법 및 반도체 장치 제조 방법
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US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5600153A (en) 1994-10-07 1997-02-04 Micron Technology, Inc. Conductive polysilicon lines and thin film transistors
US5773309A (en) * 1994-10-14 1998-06-30 The Regents Of The University Of California Method for producing silicon thin-film transistors with enhanced forward current drive
TW303526B (de) * 1994-12-27 1997-04-21 Matsushita Electric Ind Co Ltd
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US6780687B2 (en) * 2000-01-28 2004-08-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a heat absorbing layer
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Also Published As

Publication number Publication date
CA2072264A1 (en) 1992-12-29
GB9114018D0 (en) 1991-08-14
DE69216311T2 (de) 1997-06-12
EP0523768A2 (de) 1993-01-20
JPH05190568A (ja) 1993-07-30
US5264383A (en) 1993-11-23
KR930001504A (ko) 1993-01-16
KR100260063B1 (ko) 2000-07-01
EP0523768A3 (en) 1993-06-16
EP0523768B1 (de) 1997-01-02
TW232088B (de) 1994-10-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee