DE69133231T2 - Akustische Oberflächenwellenanordnung - Google Patents

Akustische Oberflächenwellenanordnung

Info

Publication number
DE69133231T2
DE69133231T2 DE69133231T DE69133231T DE69133231T2 DE 69133231 T2 DE69133231 T2 DE 69133231T2 DE 69133231 T DE69133231 T DE 69133231T DE 69133231 T DE69133231 T DE 69133231T DE 69133231 T2 DE69133231 T2 DE 69133231T2
Authority
DE
Germany
Prior art keywords
acoustic wave
surface acoustic
wave arrangement
arrangement
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69133231T
Other languages
English (en)
Other versions
DE69133231D1 (de
Inventor
Osamu Ikata
Yoshio Satoh
Tsutomu Miyashita
Mitsuo Takamatsu
Takashi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17873020&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69133231(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69133231D1 publication Critical patent/DE69133231D1/de
Publication of DE69133231T2 publication Critical patent/DE69133231T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
DE69133231T 1990-11-05 1991-11-05 Akustische Oberflächenwellenanordnung Expired - Fee Related DE69133231T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2299472A JPH04170811A (ja) 1990-11-05 1990-11-05 弾性表面波デバイス

Publications (2)

Publication Number Publication Date
DE69133231D1 DE69133231D1 (de) 2003-05-08
DE69133231T2 true DE69133231T2 (de) 2003-11-13

Family

ID=17873020

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69131223T Expired - Fee Related DE69131223T2 (de) 1990-11-05 1991-11-05 Akustische Oberflächenwellenanordnung
DE69133215T Expired - Fee Related DE69133215T2 (de) 1990-11-05 1991-11-05 Akustische Oberflächenwellenanordnung
DE69133231T Expired - Fee Related DE69133231T2 (de) 1990-11-05 1991-11-05 Akustische Oberflächenwellenanordnung

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69131223T Expired - Fee Related DE69131223T2 (de) 1990-11-05 1991-11-05 Akustische Oberflächenwellenanordnung
DE69133215T Expired - Fee Related DE69133215T2 (de) 1990-11-05 1991-11-05 Akustische Oberflächenwellenanordnung

Country Status (4)

Country Link
US (1) US5281883A (de)
EP (3) EP0866552B1 (de)
JP (1) JPH04170811A (de)
DE (3) DE69131223T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05327394A (ja) * 1992-05-27 1993-12-10 Japan Radio Co Ltd 弾性表面波素子のフェースダウン実装用パッケージ
US5459368A (en) * 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
JPH07154185A (ja) * 1993-10-04 1995-06-16 Nec Corp 弾性表面波装置およびその製造方法
US5939817A (en) * 1994-09-22 1999-08-17 Nippon Electric Co Surface acoustic wave device
JP2872056B2 (ja) * 1994-12-06 1999-03-17 日本電気株式会社 弾性表面波デバイス
JP3171043B2 (ja) * 1995-01-11 2001-05-28 株式会社村田製作所 弾性表面波装置
US5760526A (en) * 1995-04-03 1998-06-02 Motorola, Inc. Plastic encapsulated SAW device
JP3308759B2 (ja) * 1995-04-10 2002-07-29 日本電気株式会社 弾性表面波装置
JPH08288787A (ja) * 1995-04-10 1996-11-01 Canon Inc 弾性表面波素子装置、スペクトラム拡散通信装置およびこれを用いたシステム
EP0840369A4 (de) * 1995-06-30 2001-12-19 Toshiba Kk Elektronisches bauteil und herstellungsverfahren dafür
JP3306272B2 (ja) * 1995-10-20 2002-07-24 富士通株式会社 弾性表面波装置
JPH09232904A (ja) * 1996-02-28 1997-09-05 Oki Electric Ind Co Ltd Ｓａｗフィルタ用セラミックパッケージ
EP0900477B1 (de) 1996-05-24 2001-07-18 Epcos Ag Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement
JPH10150341A (ja) * 1996-09-19 1998-06-02 Murata Mfg Co Ltd １ポート型弾性表面波装置
JP3982876B2 (ja) * 1997-06-30 2007-09-26 沖電気工業株式会社 弾性表面波装置
US5969461A (en) * 1998-04-08 1999-10-19 Cts Corporation Surface acoustic wave device package and method
EP0961404B1 (de) 1998-05-29 2008-07-02 Fujitsu Limited Akustisches Oberflächenwellenfilter mit verbesserter Unterdrückung ausserhalb eines Durchlassbereichs
KR100267966B1 (ko) * 1998-07-24 2000-10-16 구자홍 표면 탄성파 필터의 패키지 구조
EP1017169B1 (de) * 1998-12-29 2005-03-16 Kabushiki Kaisha Toshiba Akustische Oberflächenwellenanordnung
JP3351402B2 (ja) * 1999-04-28 2002-11-25 株式会社村田製作所 電子素子、弾性表面波素子、それらの実装方法、電子部品または弾性表面波装置の製造方法、および、弾性表面波装置
JP2000357937A (ja) * 1999-06-17 2000-12-26 Murata Mfg Co Ltd 弾性表面波装置
JP3860364B2 (ja) * 1999-08-11 2006-12-20 富士通メディアデバイス株式会社 弾性表面波装置
JP3386043B2 (ja) * 2000-08-09 2003-03-10 株式会社村田製作所 弾性表面波デバイス
JP4049239B2 (ja) * 2000-08-30 2008-02-20 Ｔｄｋ株式会社 表面弾性波素子を含む高周波モジュール部品の製造方法
WO2003063561A1 (fr) * 2002-01-24 2003-07-31 Mitsubishi Materials Corporation Carte de circuit imprime, partie electronique a structure blindee et appareil de communications radio
KR100455699B1 (ko) * 2002-10-09 2004-11-06 주식회사 케이이씨 표면 탄성파 필터 장치
JP3913700B2 (ja) 2003-04-08 2007-05-09 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
EP1770860A1 (de) * 2004-03-18 2007-04-04 Murata Manufacturing Co., Ltd. Oberflächenwellenbauelement
US20060238274A1 (en) * 2005-04-22 2006-10-26 Ycl Electronics Co., Ltd. Surface acoustic wave device
JP2008306757A (ja) * 2008-07-29 2008-12-18 Hitachi Media Electoronics Co Ltd 弾性表面波装置
JP5686943B2 (ja) * 2008-09-17 2015-03-18 太陽誘電株式会社 弾性波デバイス及びその製造方法
JP5358724B1 (ja) 2012-06-28 2013-12-04 太陽誘電株式会社 弾性波デバイス内蔵モジュール及び通信装置
JP5825444B2 (ja) * 2012-09-28 2015-12-02 株式会社村田製作所 弾性波装置及びその製造方法
JP6106404B2 (ja) 2012-10-30 2017-03-29 太陽誘電株式会社 電子部品モジュール
WO2017110308A1 (ja) * 2015-12-21 2017-06-29 株式会社村田製作所 弾性波装置

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NL7003475A (de) * 1969-03-28 1970-09-30
US3885173A (en) * 1973-10-09 1975-05-20 Magnavox Co Apparatus and method for coupling an acoustical surface wave device to an electronic circuit
JPS5216147A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Pacage method for surface elastic wave element
US4451753A (en) * 1979-09-13 1984-05-29 Toshio Ogawa Piezoelectric device with surface charge shunt
JPS577611A (en) * 1980-06-18 1982-01-14 Fujitsu Ltd Mounting method for elastic surface wave element
JPS5897840A (ja) * 1981-12-08 1983-06-10 Sharp Corp ボンデイング方法
US4545610A (en) * 1983-11-25 1985-10-08 International Business Machines Corporation Method for forming elongated solder connections between a semiconductor device and a supporting substrate
US4949224A (en) * 1985-09-20 1990-08-14 Sharp Kabushiki Kaisha Structure for mounting a semiconductor device
JPS62173814A (ja) * 1986-01-28 1987-07-30 Alps Electric Co Ltd 弾性表面波素子搭載ユニツト
JPS62173813A (ja) * 1986-01-28 1987-07-30 Alps Electric Co Ltd 弾性表面波素子
JPS6331138A (ja) * 1986-07-24 1988-02-09 Fujitsu Ltd 半導体装置の製造方法
JPS6437132U (de) * 1987-08-31 1989-03-06
JPS6488546A (en) * 1987-09-30 1989-04-03 Fujitsu Ltd Method for exposing thick film resist
JPS6491135A (en) * 1987-10-02 1989-04-10 Fujitsu Ltd Method for forming thick film of photoresist
DE68914779T2 (de) * 1988-10-31 1994-12-01 Hitachi Ltd Akustische Oberflächenwellenfilteranordnung.
JPH02203612A (ja) * 1989-02-02 1990-08-13 Canon Inc 弾性表面波素子の製造法
US5006792A (en) * 1989-03-30 1991-04-09 Texas Instruments Incorporated Flip-chip test socket adaptor and method
US5121299A (en) * 1989-12-29 1992-06-09 International Business Machines Corporation Multi-level circuit structure utilizing conductive cores having conductive protrusions and cavities therein
JPH046841A (ja) * 1990-04-24 1992-01-10 Matsushita Electric Works Ltd 半導体装置の実装構造
US5057969A (en) * 1990-09-07 1991-10-15 International Business Machines Corporation Thin film electronic device

Also Published As

Publication number Publication date
EP0866553A2 (de) 1998-09-23
EP0485151B1 (de) 1999-05-12
EP0866552A2 (de) 1998-09-23
DE69131223T2 (de) 1999-09-23
DE69133215T2 (de) 2003-10-09
EP0866552B1 (de) 2003-04-02
DE69133215D1 (de) 2003-04-17
JPH04170811A (ja) 1992-06-18
EP0866553B1 (de) 2003-03-12
US5281883A (en) 1994-01-25
DE69133231D1 (de) 2003-05-08
DE69131223D1 (de) 1999-06-17
EP0866552A3 (de) 1999-06-30
EP0866553A3 (de) 1999-06-30
EP0485151A1 (de) 1992-05-13

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee