DE69126228D1 - Optische Wärmebehandlungsmethode für Halbleiterschicht und Herstellungsverfahren von Halbleiteranordnung mit solcher Halbleiterschicht - Google Patents

Optische Wärmebehandlungsmethode für Halbleiterschicht und Herstellungsverfahren von Halbleiteranordnung mit solcher Halbleiterschicht

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Publication number
DE69126228D1
DE69126228D1 DE69126228T DE69126228T DE69126228D1 DE 69126228 D1 DE69126228 D1 DE 69126228D1 DE 69126228 T DE69126228 T DE 69126228T DE 69126228 T DE69126228 T DE 69126228T DE 69126228 D1 DE69126228 D1 DE 69126228D1
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DE
Germany
Prior art keywords
semiconductor layer
manufacturing
heat treatment
semiconductor
optical heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126228T
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English (en)
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DE69126228T2 (de
Inventor
Takeo Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69126228D1 publication Critical patent/DE69126228D1/de
Publication of DE69126228T2 publication Critical patent/DE69126228T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02104—Forming layers
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    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02441—Group 14 semiconducting materials
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02494—Structure
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    • H01L21/0259—Microstructure
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
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  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
DE69126228T 1990-03-24 1991-03-22 Optische Wärmebehandlungsmethode für Halbleiterschicht und Herstellungsverfahren von Halbleiteranordnung mit solcher Halbleiterschicht Expired - Fee Related DE69126228T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7421090 1990-03-24

Publications (2)

Publication Number Publication Date
DE69126228D1 true DE69126228D1 (de) 1997-07-03
DE69126228T2 DE69126228T2 (de) 1997-10-09

Family

ID=13540603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126228T Expired - Fee Related DE69126228T2 (de) 1990-03-24 1991-03-22 Optische Wärmebehandlungsmethode für Halbleiterschicht und Herstellungsverfahren von Halbleiteranordnung mit solcher Halbleiterschicht

Country Status (4)

Country Link
US (1) US5312771A (de)
EP (1) EP0449524B1 (de)
AT (1) ATE153797T1 (de)
DE (1) DE69126228T2 (de)

Families Citing this family (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177127B1 (en) * 1995-12-15 2001-01-23 Micron Technology, Inc. Method of monitoring emissivity
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
WO2006082467A1 (en) * 2005-02-01 2006-08-10 S.O.I.Tec Silicon On Insulator Technologies Substrate for crystal growing a nitride semiconductor
JP5433154B2 (ja) * 2007-02-23 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
FR2914488B1 (fr) 2007-03-30 2010-08-27 Soitec Silicon On Insulator Substrat chauffage dope
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