FR2714523B1 - Procédé d'empêchement de la détérioration de la qualité de film d'un film conducteur transparent, dispositif à semiconducteur et son procédé de fabrication. - Google Patents
Procédé d'empêchement de la détérioration de la qualité de film d'un film conducteur transparent, dispositif à semiconducteur et son procédé de fabrication.Info
- Publication number
- FR2714523B1 FR2714523B1 FR9411304A FR9411304A FR2714523B1 FR 2714523 B1 FR2714523 B1 FR 2714523B1 FR 9411304 A FR9411304 A FR 9411304A FR 9411304 A FR9411304 A FR 9411304A FR 2714523 B1 FR2714523 B1 FR 2714523B1
- Authority
- FR
- France
- Prior art keywords
- conductive film
- manufacturing
- semiconductor device
- transparent conductive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000006866 deterioration Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 210000004940 nucleus Anatomy 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33066193 | 1993-12-27 | ||
JP04952894A JP3272532B2 (ja) | 1993-12-27 | 1994-03-18 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2714523A1 FR2714523A1 (fr) | 1995-06-30 |
FR2714523B1 true FR2714523B1 (fr) | 1999-04-16 |
Family
ID=26389931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9411304A Expired - Fee Related FR2714523B1 (fr) | 1993-12-27 | 1994-09-22 | Procédé d'empêchement de la détérioration de la qualité de film d'un film conducteur transparent, dispositif à semiconducteur et son procédé de fabrication. |
Country Status (3)
Country | Link |
---|---|
US (3) | US5429983A (fr) |
JP (1) | JP3272532B2 (fr) |
FR (1) | FR2714523B1 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3315834B2 (ja) * | 1995-05-31 | 2002-08-19 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
US6025269A (en) * | 1996-10-15 | 2000-02-15 | Micron Technology, Inc. | Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer |
JP3796030B2 (ja) * | 1997-11-16 | 2006-07-12 | キヤノンアネルバ株式会社 | 薄膜作成装置 |
US6579749B2 (en) * | 1998-11-17 | 2003-06-17 | Nec Corporation | Fabrication method and fabrication apparatus for thin film transistor |
KR100344777B1 (ko) * | 2000-02-28 | 2002-07-20 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터를 포함하는 소자 제조방법 |
AU2001285055A1 (en) * | 2000-08-18 | 2002-03-04 | Midwest Research Institute | High carrier concentration p-type transparent conducting oxide films |
US6930025B2 (en) * | 2001-02-01 | 2005-08-16 | Canon Kabushiki Kaisha | Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device |
US7517784B2 (en) * | 2001-08-17 | 2009-04-14 | Alliance For Sustainable Energy, Llc | Method for producing high carrier concentration p-Type transparent conducting oxides |
JP4739356B2 (ja) * | 2008-01-28 | 2011-08-03 | 純一 半那 | 導電性パターン |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
US8896065B2 (en) * | 2008-04-14 | 2014-11-25 | Sharp Laboratories Of America, Inc. | Top gate thin film transistor with independent field control for off-current suppression |
KR102096109B1 (ko) | 2009-07-03 | 2020-04-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2011106451A1 (fr) * | 2010-02-23 | 2011-09-01 | Life Technologies Corporation | Procédés de traitement de surfaces d'oxyde métallique, et surfaces obtenues par ces procédés |
WO2012029596A1 (fr) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de fabrication d'un dispositif semi-conducteur |
JP6053098B2 (ja) | 2011-03-28 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5843734B2 (ja) * | 2012-09-10 | 2016-01-13 | 三菱電機株式会社 | 光電変換素子およびその製造方法 |
TWI565080B (zh) * | 2014-12-02 | 2017-01-01 | 國立中山大學 | 薄膜電晶體的製作方法 |
JP6832776B2 (ja) * | 2017-03-30 | 2021-02-24 | 東京エレクトロン株式会社 | 選択成長方法 |
DE102018124576A1 (de) | 2018-10-05 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines halbleiterbauelements mit durchführung einer plasmabehandlung und halbleiterbauelement |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193025A (en) * | 1981-05-25 | 1982-11-27 | Semiconductor Energy Lab Co Ltd | Manufacture of film |
IN157312B (fr) * | 1982-01-12 | 1986-03-01 | Rca Corp | |
JPS58175674A (ja) * | 1982-04-08 | 1983-10-14 | Fuji Xerox Co Ltd | 熱磁気記録装置 |
JPS60213062A (ja) * | 1984-04-09 | 1985-10-25 | Hosiden Electronics Co Ltd | 薄膜トランジスタの製造方法 |
US4592792A (en) * | 1985-01-23 | 1986-06-03 | Rca Corporation | Method for forming uniformly thick selective epitaxial silicon |
JPS6281057A (ja) * | 1985-10-04 | 1987-04-14 | Hosiden Electronics Co Ltd | 透明導電膜 |
EP0217406B1 (fr) * | 1985-10-04 | 1992-06-10 | Hosiden Corporation | Transistor à couche mince et méthode pour sa fabrication |
JPS6296667A (ja) * | 1985-10-22 | 1987-05-06 | Seiko Epson Corp | 薄膜作製方法 |
US4849797A (en) * | 1987-01-23 | 1989-07-18 | Hosiden Electronics Co., Ltd. | Thin film transistor |
CA1321121C (fr) * | 1987-03-27 | 1993-08-10 | Hiroyuki Tokunaga | Methode de fabrication de semiconducteurs composites et dispositif a semiconducteur utilisant un semiconducteur composite fabrique selon cette methode |
FI81926C (fi) * | 1987-09-29 | 1990-12-10 | Nokia Oy Ab | Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater. |
US4873118A (en) * | 1988-11-18 | 1989-10-10 | Atlantic Richfield Company | Oxygen glow treating of ZnO electrode for thin film silicon solar cell |
US5141893A (en) * | 1988-12-22 | 1992-08-25 | Ford Microelectronics | Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate |
WO1991003834A1 (fr) * | 1989-09-05 | 1991-03-21 | Mcnc | Procede pour deposer selectivement de la matiere sur des substrats |
US5134091A (en) * | 1989-09-29 | 1992-07-28 | National Research Institute For Metals | Quantum effective device and process for its production |
US5242580A (en) * | 1990-11-13 | 1993-09-07 | Esso Resources Canada Limited | Recovery of hydrocarbons from hydrocarbon contaminated sludge |
US5242530A (en) * | 1991-08-05 | 1993-09-07 | International Business Machines Corporation | Pulsed gas plasma-enhanced chemical vapor deposition of silicon |
US5229332A (en) * | 1992-02-25 | 1993-07-20 | Texas Instruments Incorporated | Method for the growth of epitaxial metal-insulator-metal-semiconductor structures |
-
1994
- 1994-03-18 JP JP04952894A patent/JP3272532B2/ja not_active Expired - Fee Related
- 1994-08-29 US US08/297,155 patent/US5429983A/en not_active Expired - Lifetime
- 1994-09-22 FR FR9411304A patent/FR2714523B1/fr not_active Expired - Fee Related
-
1995
- 1995-03-22 US US08/407,957 patent/US5620924A/en not_active Expired - Lifetime
-
1996
- 1996-10-11 US US08/730,662 patent/US5900646A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5429983A (en) | 1995-07-04 |
JP3272532B2 (ja) | 2002-04-08 |
JPH07235502A (ja) | 1995-09-05 |
US5620924A (en) | 1997-04-15 |
FR2714523A1 (fr) | 1995-06-30 |
US5900646A (en) | 1999-05-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20060531 |