DE69123782T2 - Programmierbare nichtflüchtige Hochgeschwindigkeitsnurlesespeicheranordnung, die mittels selektiver Dotierungstechnik hergestellt wird - Google Patents

Programmierbare nichtflüchtige Hochgeschwindigkeitsnurlesespeicheranordnung, die mittels selektiver Dotierungstechnik hergestellt wird

Info

Publication number
DE69123782T2
DE69123782T2 DE69123782T DE69123782T DE69123782T2 DE 69123782 T2 DE69123782 T2 DE 69123782T2 DE 69123782 T DE69123782 T DE 69123782T DE 69123782 T DE69123782 T DE 69123782T DE 69123782 T2 DE69123782 T2 DE 69123782T2
Authority
DE
Germany
Prior art keywords
programmable
speed
memory device
device fabricated
volatile read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123782T
Other languages
English (en)
Other versions
DE69123782D1 (de
Inventor
Masaaki Kuzuhara
Yasuko Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2131794A external-priority patent/JPH0426163A/ja
Priority claimed from JP2131795A external-priority patent/JP2611493B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69123782D1 publication Critical patent/DE69123782D1/de
Application granted granted Critical
Publication of DE69123782T2 publication Critical patent/DE69123782T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69123782T 1990-05-22 1991-05-17 Programmierbare nichtflüchtige Hochgeschwindigkeitsnurlesespeicheranordnung, die mittels selektiver Dotierungstechnik hergestellt wird Expired - Fee Related DE69123782T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2131794A JPH0426163A (ja) 1990-05-22 1990-05-22 化合物半導体集積回路装置
JP2131795A JP2611493B2 (ja) 1990-05-22 1990-05-22 化合物半導体集積回路装置とその製造方法

Publications (2)

Publication Number Publication Date
DE69123782D1 DE69123782D1 (de) 1997-02-06
DE69123782T2 true DE69123782T2 (de) 1997-07-10

Family

ID=26466528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123782T Expired - Fee Related DE69123782T2 (de) 1990-05-22 1991-05-17 Programmierbare nichtflüchtige Hochgeschwindigkeitsnurlesespeicheranordnung, die mittels selektiver Dotierungstechnik hergestellt wird

Country Status (3)

Country Link
US (1) US5272372A (de)
EP (1) EP0458212B1 (de)
DE (1) DE69123782T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2687917B2 (ja) * 1995-02-20 1997-12-08 日本電気株式会社 半導体装置の製造方法
JPH0982921A (ja) * 1995-09-11 1997-03-28 Rohm Co Ltd 半導体記憶装置、その製造方法および半導体記憶装置の仮想グランドアレイ接続方法
JPH09320287A (ja) * 1996-05-24 1997-12-12 Nec Corp 不揮発性半導体記憶装置
JPH11214640A (ja) * 1998-01-28 1999-08-06 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041262A (ja) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd 半導体装置
JPS61241968A (ja) * 1985-04-19 1986-10-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体記憶装置
US4903092A (en) * 1986-08-12 1990-02-20 American Telephone And Telegraph Company, At&T Bell Laboratories Real space electron transfer device using hot electron injection
JPS63178565A (ja) * 1987-01-20 1988-07-22 Sharp Corp 化合物半導体メモリ装置

Also Published As

Publication number Publication date
DE69123782D1 (de) 1997-02-06
US5272372A (en) 1993-12-21
EP0458212B1 (de) 1996-12-27
EP0458212A3 (en) 1992-04-01
EP0458212A2 (de) 1991-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee