DE69120704D1 - Halbleiterspeicheranordnung hergestellt mit BICMOS-Schaltungen und fähig, ein Signal zu empfangen - Google Patents

Halbleiterspeicheranordnung hergestellt mit BICMOS-Schaltungen und fähig, ein Signal zu empfangen

Info

Publication number
DE69120704D1
DE69120704D1 DE69120704T DE69120704T DE69120704D1 DE 69120704 D1 DE69120704 D1 DE 69120704D1 DE 69120704 T DE69120704 T DE 69120704T DE 69120704 T DE69120704 T DE 69120704T DE 69120704 D1 DE69120704 D1 DE 69120704D1
Authority
DE
Germany
Prior art keywords
receiving
signal
memory device
semiconductor memory
device fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120704T
Other languages
English (en)
Other versions
DE69120704T2 (de
Inventor
Kenjyu Shimogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69120704D1 publication Critical patent/DE69120704D1/de
Application granted granted Critical
Publication of DE69120704T2 publication Critical patent/DE69120704T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
DE69120704T 1990-03-29 1991-03-26 Halbleiterspeicheranordnung hergestellt mit BICMOS-Schaltungen und fähig, ein Signal zu empfangen Expired - Fee Related DE69120704T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2082683A JPH03283091A (ja) 1990-03-29 1990-03-29 半導体記憶回路装置

Publications (2)

Publication Number Publication Date
DE69120704D1 true DE69120704D1 (de) 1996-08-14
DE69120704T2 DE69120704T2 (de) 1997-02-20

Family

ID=13781223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120704T Expired - Fee Related DE69120704T2 (de) 1990-03-29 1991-03-26 Halbleiterspeicheranordnung hergestellt mit BICMOS-Schaltungen und fähig, ein Signal zu empfangen

Country Status (4)

Country Link
US (1) US5202823A (de)
EP (1) EP0449218B1 (de)
JP (1) JPH03283091A (de)
DE (1) DE69120704T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010837B1 (ko) * 1991-10-21 1994-11-17 현대전자산업 주식회사 Dram의 워드선 구동회로
US6366524B1 (en) * 2000-07-28 2002-04-02 Micron Technology Inc. Address decoding in multiple-bank memory architectures
JP2007035091A (ja) * 2005-07-22 2007-02-08 Sony Corp 半導体記憶装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310229A (en) * 1976-07-16 1978-01-30 Mitsubishi Electric Corp Decoder circuit
JPS6035758B2 (ja) * 1979-10-03 1985-08-16 株式会社東芝 不揮発性半導体メモリ
JPS5936357B2 (ja) * 1980-12-02 1984-09-03 三洋電機株式会社 半導体記憶装置
JPS6059587A (ja) * 1983-09-12 1985-04-05 Hitachi Ltd 半導体集積回路装置
JPS6368053U (de) * 1986-10-20 1988-05-07
JPH02101695A (ja) * 1988-10-07 1990-04-13 Fujitsu Ltd Ｒａｍチップセレクト回路
JPH02247892A (ja) * 1989-03-20 1990-10-03 Fujitsu Ltd ダイナミックランダムアクセスメモリ
JPH03224199A (ja) * 1990-01-29 1991-10-03 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
US5202823A (en) 1993-04-13
EP0449218A3 (en) 1993-03-17
JPH03283091A (ja) 1991-12-13
EP0449218A2 (de) 1991-10-02
EP0449218B1 (de) 1996-07-10
DE69120704T2 (de) 1997-02-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee