DE69028382T2 - Serielle multiplexierte Registerarchitektur für VRAM - Google Patents

Serielle multiplexierte Registerarchitektur für VRAM

Info

Publication number
DE69028382T2
DE69028382T2 DE69028382T DE69028382T DE69028382T2 DE 69028382 T2 DE69028382 T2 DE 69028382T2 DE 69028382 T DE69028382 T DE 69028382T DE 69028382 T DE69028382 T DE 69028382T DE 69028382 T2 DE69028382 T2 DE 69028382T2
Authority
DE
Germany
Prior art keywords
pairs
folded bit
serial
port
arrays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028382T
Other languages
English (en)
Other versions
DE69028382D1 (de
Inventor
Nathan Rafael Hiltebeitel
Robert Tamlyn
Steven William Tomashot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69028382D1 publication Critical patent/DE69028382D1/de
Publication of DE69028382T2 publication Critical patent/DE69028382T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Information Transfer Systems (AREA)
  • Time-Division Multiplex Systems (AREA)
  • Controls And Circuits For Display Device (AREA)
  • Static Random-Access Memory (AREA)
DE69028382T 1989-12-05 1990-10-10 Serielle multiplexierte Registerarchitektur für VRAM Expired - Fee Related DE69028382T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/446,032 US4984214A (en) 1989-12-05 1989-12-05 Multiplexed serial register architecture for VRAM

Publications (2)

Publication Number Publication Date
DE69028382D1 DE69028382D1 (de) 1996-10-10
DE69028382T2 true DE69028382T2 (de) 1997-03-13

Family

ID=23771078

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028382T Expired - Fee Related DE69028382T2 (de) 1989-12-05 1990-10-10 Serielle multiplexierte Registerarchitektur für VRAM

Country Status (13)

Country Link
US (1) US4984214A (de)
EP (1) EP0436077B1 (de)
JP (1) JPH0638316B2 (de)
KR (1) KR950000025B1 (de)
CN (1) CN1022957C (de)
AT (1) ATE142365T1 (de)
AU (1) AU630843B2 (de)
BR (1) BR9006027A (de)
CA (1) CA2026461C (de)
DE (1) DE69028382T2 (de)
ES (1) ES2091783T3 (de)
HK (1) HK120197A (de)
MY (1) MY104594A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3028963B2 (ja) * 1988-09-21 2000-04-04 株式会社東芝 ビデオメモリ装置
US5257237A (en) * 1989-05-16 1993-10-26 International Business Machines Corporation SAM data selection on dual-ported DRAM devices
JP2880547B2 (ja) * 1990-01-19 1999-04-12 三菱電機株式会社 半導体記憶装置
EP0513451B1 (de) * 1991-05-16 1997-07-23 International Business Machines Corporation Speicheranordnung
JP2724932B2 (ja) * 1991-12-03 1998-03-09 三菱電機株式会社 デュアルポートメモリ
US5299159A (en) * 1992-06-29 1994-03-29 Texas Instruments Incorporated Serial register stage arranged for connection with a single bitline
US5394172A (en) * 1993-03-11 1995-02-28 Micron Semiconductor, Inc. VRAM having isolated array sections for providing write functions that will not affect other array sections
US5442748A (en) * 1993-10-29 1995-08-15 Sun Microsystems, Inc. Architecture of output switching circuitry for frame buffer
US5422998A (en) * 1993-11-15 1995-06-06 Margolin; Jed Video memory with flash fill
US5592681A (en) * 1994-06-14 1997-01-07 Texas Instruments Incorporated Data processing with improved register bit structure
US5870108A (en) * 1995-01-09 1999-02-09 International Business Machines Corporation Information handling system including mapping of graphics display data to a video buffer for fast updation of graphic primitives
US5822768A (en) * 1996-01-11 1998-10-13 Opti Inc. Dual ported memory for a unified memory architecture
US6167486A (en) 1996-11-18 2000-12-26 Nec Electronics, Inc. Parallel access virtual channel memory system with cacheable channels
US6708254B2 (en) 1999-11-10 2004-03-16 Nec Electronics America, Inc. Parallel access virtual channel memory system
KR100466689B1 (ko) * 2000-08-28 2005-01-24 인터내셔널 비지네스 머신즈 코포레이션 콤팩트형 이중 포트 동적 랜덤 액세스 메모리 아키텍쳐 시스템 및 그 제조 방법
JP4641338B2 (ja) * 2000-08-29 2011-03-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びシステム
KR100460141B1 (ko) * 2002-07-08 2004-12-03 삼성전자주식회사 듀얼 포트 정적 메모리 셀 및 이 셀을 구비한 반도체메모리 장치
CN1314202C (zh) * 2004-05-12 2007-05-02 凌阳科技股份有限公司 共享运算放大器及应用其的增益电路与模拟/数字转换电路
KR100799158B1 (ko) * 2005-09-21 2008-01-29 삼성전자주식회사 반도체 메모리 및 이를 포함하는 반도체 메모리 모듈
US7948786B2 (en) * 2008-02-06 2011-05-24 Micron Technology, Inc. Rank select using a global select pin
CN101727961B (zh) * 2008-10-29 2013-03-06 中国科学院半导体研究所 可编程门列阵中嵌入式可重构存储器
US9893730B1 (en) * 2017-03-31 2018-02-13 Advanced Micro Devices, Inc. Three rail level shifter
US10630293B2 (en) 2017-03-31 2020-04-21 Adanced Micro Devices, Inc. High speed transmitter

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539073B2 (de) * 1974-12-25 1980-10-08
US4541075A (en) * 1982-06-30 1985-09-10 International Business Machines Corporation Random access memory having a second input/output port
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPS6194295A (ja) * 1984-10-16 1986-05-13 Fujitsu Ltd 半導体記憶装置
JPS61160898A (ja) * 1985-01-05 1986-07-21 Fujitsu Ltd 半導体記憶装置
US4683555A (en) * 1985-01-22 1987-07-28 Texas Instruments Incorporated Serial accessed semiconductor memory with reconfigureable shift registers
US4648077A (en) * 1985-01-22 1987-03-03 Texas Instruments Incorporated Video serial accessed memory with midline load
US4680738A (en) * 1985-07-30 1987-07-14 Advanced Micro Devices, Inc. Memory with sequential mode
JPH07111822B2 (ja) * 1986-03-07 1995-11-29 株式会社日立製作所 半導体記憶装置
JPS62287497A (ja) * 1986-06-06 1987-12-14 Fujitsu Ltd 半導体記憶装置
US4754433A (en) * 1986-09-16 1988-06-28 Ibm Corporation Dynamic ram having multiplexed twin I/O line pairs
JPS63261598A (ja) * 1987-04-20 1988-10-28 Hitachi Ltd 半導体メモリ
JP2591010B2 (ja) * 1988-01-29 1997-03-19 日本電気株式会社 シリアルアクセスメモリ装置

Also Published As

Publication number Publication date
CA2026461A1 (en) 1991-06-06
KR950000025B1 (ko) 1995-01-07
BR9006027A (pt) 1991-09-24
JPH0638316B2 (ja) 1994-05-18
JPH03181089A (ja) 1991-08-07
CN1022957C (zh) 1993-12-01
ES2091783T3 (es) 1996-11-16
HK120197A (en) 1997-09-05
KR910013274A (ko) 1991-08-08
DE69028382D1 (de) 1996-10-10
CN1062048A (zh) 1992-06-17
EP0436077B1 (de) 1996-09-04
ATE142365T1 (de) 1996-09-15
EP0436077A2 (de) 1991-07-10
AU630843B2 (en) 1992-11-05
CA2026461C (en) 1993-03-09
AU6583090A (en) 1991-06-13
US4984214A (en) 1991-01-08
EP0436077A3 (en) 1993-05-26
MY104594A (en) 1994-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee