DE68928573D1 - Treiberschaltung für eine spannungsgesteuerte Halbleitervorrichtung - Google Patents

Treiberschaltung für eine spannungsgesteuerte Halbleitervorrichtung

Info

Publication number
DE68928573D1
DE68928573D1 DE68928573T DE68928573T DE68928573D1 DE 68928573 D1 DE68928573 D1 DE 68928573D1 DE 68928573 T DE68928573 T DE 68928573T DE 68928573 T DE68928573 T DE 68928573T DE 68928573 D1 DE68928573 D1 DE 68928573D1
Authority
DE
Germany
Prior art keywords
semiconductor device
driver circuit
voltage controlled
controlled semiconductor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928573T
Other languages
English (en)
Other versions
DE68928573T2 (de
Inventor
Kiyoaki Sasagwa
Hiroshi Miki
Tadashi Miyasaka
Hideki Ninomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10056989A external-priority patent/JPH02280659A/ja
Priority claimed from JP17949789A external-priority patent/JPH02179262A/ja
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE68928573D1 publication Critical patent/DE68928573D1/de
Application granted granted Critical
Publication of DE68928573T2 publication Critical patent/DE68928573T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
DE68928573T 1988-11-16 1989-11-16 Treiberschaltung für eine spannungsgesteuerte Halbleitervorrichtung Expired - Fee Related DE68928573T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP28923188 1988-11-16
JP32435988 1988-12-22
JP6882189 1989-03-20
JP10056989A JPH02280659A (ja) 1989-04-20 1989-04-20 スイッチング用半導体装置の駆動出力回路
JP17949789A JPH02179262A (ja) 1988-09-16 1989-07-12 電圧駆動形半導体素子のゲート駆動回路
JP18177189 1989-07-14
JP22264289 1989-08-29

Publications (2)

Publication Number Publication Date
DE68928573D1 true DE68928573D1 (de) 1998-03-05
DE68928573T2 DE68928573T2 (de) 1998-05-14

Family

ID=27565133

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68928161T Expired - Fee Related DE68928161T2 (de) 1988-11-16 1989-11-16 Treiberschaltung zur Verwendung bei einer spannungsgesteuerten Halbleitervorrichtung
DE68928573T Expired - Fee Related DE68928573T2 (de) 1988-11-16 1989-11-16 Treiberschaltung für eine spannungsgesteuerte Halbleitervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE68928161T Expired - Fee Related DE68928161T2 (de) 1988-11-16 1989-11-16 Treiberschaltung zur Verwendung bei einer spannungsgesteuerten Halbleitervorrichtung

Country Status (3)

Country Link
US (1) US4949213A (de)
EP (1) EP0369448B1 (de)
DE (2) DE68928161T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354435B1 (de) * 1988-08-12 1995-12-20 Hitachi, Ltd. Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem
FR2663175A1 (fr) * 1990-06-12 1991-12-13 Merlin Gerin Commutateur statique.
JP2669117B2 (ja) * 1990-07-19 1997-10-27 富士電機株式会社 電圧駆動形半導体素子の駆動回路
JPH0479758A (ja) * 1990-07-19 1992-03-13 Fuji Electric Co Ltd 電流センスｉｇｂｔの駆動回路
US5134323A (en) * 1990-08-03 1992-07-28 Congdon James E Three terminal noninverting transistor switch
JP2674355B2 (ja) * 1991-05-15 1997-11-12 三菱電機株式会社 パワー素子の過電流保護装置
JP3049938B2 (ja) * 1992-05-08 2000-06-05 富士電機株式会社 Ｉｇｂｔのゲート駆動方法
FR2728117B1 (fr) * 1994-12-09 1997-01-10 Alsthom Cge Alcatel Circuit de commande pour interrupteur electronique et interrupteur en faisant application
CA2172890C (en) * 1995-06-06 2005-02-22 Harold R. Schnetzka Switch driver circuit
JPH1051285A (ja) * 1996-05-28 1998-02-20 Mitsubishi Electric Corp 電圧制御型トランジスタの駆動回路
WO1998054727A2 (en) * 1997-05-30 1998-12-03 Micron Technology, Inc. 256 Meg DYNAMIC RANDOM ACCESS MEMORY
JP3409994B2 (ja) * 1997-06-20 2003-05-26 株式会社東芝 自己消弧形素子駆動回路
JP3932841B2 (ja) 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
JP2007028278A (ja) * 2005-07-19 2007-02-01 Denso Corp 駆動回路
DE102005045099B4 (de) * 2005-09-21 2011-05-05 Infineon Technologies Ag Entsättigungsschaltung mit einem IGBT
US7741881B2 (en) * 2007-03-30 2010-06-22 Intel Corporation MOSFET gate interface
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
US8102192B2 (en) * 2007-07-27 2012-01-24 International Rectifier Corporation DC brushed motor drive with circuit to reduce di/dt and EMI, for MOSFET Vth detection, voltage source detection, and overpower protection
US7570101B1 (en) * 2008-02-27 2009-08-04 The United States Of America As Represented By The United States Department Of Energy Advanced insulated gate bipolar transistor gate drive
TWI424550B (zh) 2010-12-30 2014-01-21 Ind Tech Res Inst 功率元件封裝結構
CN102324833B (zh) * 2011-06-10 2014-01-08 无锡友达电子有限公司 低压工艺设计的电动车驱动器的专用集成电路
JP5510478B2 (ja) 2012-03-02 2014-06-04 株式会社デンソー スイッチング素子の駆動回路
JP5500192B2 (ja) * 2012-03-16 2014-05-21 株式会社デンソー スイッチング素子の駆動回路
US8760218B2 (en) 2012-05-07 2014-06-24 General Electric Company System and method for operating an electric power converter
CN105842599B (zh) * 2015-01-12 2018-11-16 中芯国际集成电路制造(上海)有限公司 一种用于稳压二极管的建模方法和模型电路
US10439514B2 (en) * 2016-03-16 2019-10-08 Panasonic Intellectual Property Management Co., Ltd. Power conversion circuit
CN105652134A (zh) * 2016-03-24 2016-06-08 安徽理工大学 一种新型电压突变发生器
US10348286B2 (en) 2016-07-06 2019-07-09 Delta Electronics, Inc. Waveform conversion circuit for gate driver
US10826484B2 (en) 2016-07-06 2020-11-03 Delta Electronics, Inc. Waveform conversion circuit for gate driver
CN106452399B (zh) * 2016-07-25 2024-06-18 中国船舶集团有限公司第七一六研究所 一种应用于全控型电力电子器件的驱动保护电路
WO2019234999A1 (ja) * 2018-06-05 2019-12-12 パナソニックＩｐマネジメント株式会社 入出力回路
CN109004921A (zh) * 2018-07-02 2018-12-14 蔡旺兵 一种开关量元件免屏蔽抗干扰输出电路
FR3089369B1 (fr) * 2018-12-03 2021-07-09 Alstom Transp Tech Procédé de pilotage d’un composant à grille isolée et circuit de pilotage correspondant
US20240178829A1 (en) * 2021-03-22 2024-05-30 Nissan Motor Co., Ltd. Driving circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124909A (en) * 1981-01-27 1982-08-04 Toshiba Corp Output transistor protection circuit
US4408245A (en) * 1981-12-28 1983-10-04 Rca Corporation Protection and anti-floating network for insulated-gate field-effect circuitry
DE3230236A1 (de) * 1982-08-13 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Darlingtonschaltung
DE3366617D1 (en) * 1982-10-12 1986-11-06 Nissan Motor A semiconductor switching circuit with an overcurrent protection
JPH0681037B2 (ja) * 1984-08-29 1994-10-12 富士通株式会社 保護回路付ｔｔｌ回路
DE3689445T2 (de) * 1985-02-08 1994-07-14 Toshiba Kawasaki Kk Schutzschaltung für einen Bipolartransistor mit isoliertem Gate.
CN1004184B (zh) * 1985-05-15 1989-05-10 东芝株式会社 导电率调制型mos场效应管的过电流保护电路

Also Published As

Publication number Publication date
EP0369448A2 (de) 1990-05-23
DE68928161T2 (de) 1997-10-30
DE68928573T2 (de) 1998-05-14
EP0369448A3 (de) 1991-09-11
EP0369448B1 (de) 1997-07-09
US4949213A (en) 1990-08-14
DE68928161D1 (de) 1997-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee