DE68928468T2 - Vorrichtung und Verfahren zur Kühlung von Substraten - Google Patents

Vorrichtung und Verfahren zur Kühlung von Substraten

Info

Publication number
DE68928468T2
DE68928468T2 DE68928468T DE68928468T DE68928468T2 DE 68928468 T2 DE68928468 T2 DE 68928468T2 DE 68928468 T DE68928468 T DE 68928468T DE 68928468 T DE68928468 T DE 68928468T DE 68928468 T2 DE68928468 T2 DE 68928468T2
Authority
DE
Germany
Prior art keywords
cooling substrates
substrates
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68928468T
Other languages
English (en)
Other versions
DE68928468D1 (de
Inventor
Emmanuel N Lakios
Michael F Mcgraw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of DE68928468D1 publication Critical patent/DE68928468D1/de
Application granted granted Critical
Publication of DE68928468T2 publication Critical patent/DE68928468T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE68928468T 1988-05-18 1989-05-17 Vorrichtung und Verfahren zur Kühlung von Substraten Expired - Lifetime DE68928468T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/195,707 US4949783A (en) 1988-05-18 1988-05-18 Substrate transport and cooling apparatus and method for same

Publications (2)

Publication Number Publication Date
DE68928468D1 DE68928468D1 (de) 1998-01-15
DE68928468T2 true DE68928468T2 (de) 1998-07-02

Family

ID=22722447

Family Applications (2)

Application Number Title Priority Date Filing Date
DE0342940T Pending DE342940T1 (de) 1988-05-18 1989-05-17 Vorrichtung und Verfahren zur Beförderung und zur Kühlung von Substraten.
DE68928468T Expired - Lifetime DE68928468T2 (de) 1988-05-18 1989-05-17 Vorrichtung und Verfahren zur Kühlung von Substraten

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE0342940T Pending DE342940T1 (de) 1988-05-18 1989-05-17 Vorrichtung und Verfahren zur Beförderung und zur Kühlung von Substraten.

Country Status (4)

Country Link
US (1) US4949783A (de)
EP (1) EP0342940B1 (de)
JP (1) JP2717308B2 (de)
DE (2) DE342940T1 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5484011A (en) * 1986-12-19 1996-01-16 Applied Materials, Inc. Method of heating and cooling a wafer during semiconductor processing
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US5180000A (en) * 1989-05-08 1993-01-19 Balzers Aktiengesellschaft Workpiece carrier with suction slot for a disk-shaped workpiece
DE3943482C2 (de) * 1989-05-08 1994-07-07 Balzers Hochvakuum Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumprozeßkammer
US5673750A (en) * 1990-05-19 1997-10-07 Hitachi, Ltd. Vacuum processing method and apparatus
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
EP0491503A3 (de) * 1990-12-19 1992-07-22 AT&T Corp. Verfahren zur Ablagerung von Metall
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JP2577162B2 (ja) * 1991-06-17 1997-01-29 アプライド マテリアルズ インコーポレイテッド ロードロックチャンバにおける加熱されたシリコン基板に生じる温度差を制御する方法および装置
JPH05166757A (ja) * 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
US5343012A (en) * 1992-10-06 1994-08-30 Hardy Walter N Differentially pumped temperature controller for low pressure thin film fabrication process
JPH06204157A (ja) * 1992-12-25 1994-07-22 Tokyo Electron Tohoku Ltd 縦型熱処理装置
KR960006958B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알 장비
TW277139B (de) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5738751A (en) * 1994-09-01 1998-04-14 Applied Materials, Inc. Substrate support having improved heat transfer
US5595241A (en) * 1994-10-07 1997-01-21 Sony Corporation Wafer heating chuck with dual zone backplane heating and segmented clamping member
JP4079992B2 (ja) * 1994-10-17 2008-04-23 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法
TW281795B (de) * 1994-11-30 1996-07-21 Sharp Kk
US5746930A (en) * 1995-01-03 1998-05-05 Texas Instruments Incorporated Method and structure for forming an array of thermal sensors
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
US5697427A (en) * 1995-12-22 1997-12-16 Applied Materials, Inc. Apparatus and method for cooling a substrate
US5948283A (en) * 1996-06-28 1999-09-07 Lam Research Corporation Method and apparatus for enhancing outcome uniformity of direct-plasma processes
GB2325939B (en) * 1997-01-02 2001-12-19 Cvc Products Inc Thermally conductive chuck for vacuum processor
US5936829A (en) * 1997-01-02 1999-08-10 Cvc Products, Inc. Thermally conductive chuck for vacuum processor
US6183523B1 (en) 1997-03-03 2001-02-06 Tokyo Electron Limited Apparatus for thermal control of variously sized articles in vacuum
US6073366A (en) 1997-07-11 2000-06-13 Asm America, Inc. Substrate cooling system and method
KR20010023014A (ko) * 1997-08-28 2001-03-26 씨브이씨 프로덕츠 인코포레이티드 다중스테이션 장비용 웨이퍼 핸들러
US6138745A (en) 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
US6073576A (en) 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
CN1291345A (zh) * 1998-02-18 2001-04-11 应用材料有限公司 用在处理系统晶片搬运器上的端部操作装置
US6545580B2 (en) 1998-09-09 2003-04-08 Veeco Instruments, Inc. Electromagnetic field generator and method of operation
US6108937A (en) * 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
US6957690B1 (en) 1998-09-10 2005-10-25 Asm America, Inc. Apparatus for thermal treatment of substrates
WO2000031777A1 (en) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Fast heating and cooling apparatus for semiconductor wafers
US6110288A (en) * 1998-12-17 2000-08-29 Eaton Corporation Temperature probe and measurement method for low pressure process
DE19907210A1 (de) * 1999-02-23 2000-08-31 Krauss Maffei Kunststofftech Vorrichtung zum Transportieren und gleichzeitigen Kühlen von Substraten für Informationsträgerscheiben wie CD, DVD oder dergleichen
US6241005B1 (en) 1999-03-30 2001-06-05 Veeco Instruments, Inc. Thermal interface member
US6635580B1 (en) * 1999-04-01 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for controlling wafer temperature in a plasma etcher
AU5448200A (en) 1999-05-27 2000-12-18 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
DE19949005A1 (de) * 1999-10-11 2001-05-10 Leica Microsystems Einrichtung und Verfahren zum Einbringen verschiedener transparenter Substrate in ein hochgenaues Messgerät
US6705394B1 (en) 1999-10-29 2004-03-16 Cvc Products, Inc. Rapid cycle chuck for low-pressure processing
US6259062B1 (en) 1999-12-03 2001-07-10 Asm America, Inc. Process chamber cooling
US6290491B1 (en) 2000-06-29 2001-09-18 Motorola, Inc. Method for heating a semiconductor wafer in a process chamber by a shower head, and process chamber
US6652655B1 (en) 2000-07-07 2003-11-25 Applied Materials, Inc. Method to isolate multi zone heater from atmosphere
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
US6609869B2 (en) 2001-01-04 2003-08-26 Asm America Transfer chamber with integral loadlock and staging station
US6470946B2 (en) 2001-02-06 2002-10-29 Anadigics, Inc. Wafer demount gas distribution tool
US6491083B2 (en) 2001-02-06 2002-12-10 Anadigics, Inc. Wafer demount receptacle for separation of thinned wafer from mounting carrier
US6899507B2 (en) * 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7208195B2 (en) * 2002-03-27 2007-04-24 Ener1Group, Inc. Methods and apparatus for deposition of thin films
US6547559B1 (en) 2002-05-20 2003-04-15 Veeco Instruments, Inc. Clamping of a semiconductor substrate for gas-assisted heat transfer in a vacuum chamber
US6905333B2 (en) 2002-09-10 2005-06-14 Axcelis Technologies, Inc. Method of heating a substrate in a variable temperature process using a fixed temperature chuck
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7481312B2 (en) * 2004-12-02 2009-01-27 Hitachi Global Storage Technologies Netherlands B.V. Direct cooling pallet assembly for temperature stability for deep ion mill etch process
US7296420B2 (en) * 2004-12-02 2007-11-20 Hitachi Global Storage Technologies Amsterdam, B.V. Direct cooling pallet tray for temperature stability for deep ion mill etch process
US20080314320A1 (en) * 2005-02-04 2008-12-25 Component Re-Engineering Company, Inc. Chamber Mount for High Temperature Application of AIN Heaters
JP4666473B2 (ja) * 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US20100270004A1 (en) * 2005-05-12 2010-10-28 Landess James D Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates
EP2495212A3 (de) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
KR101522725B1 (ko) * 2006-01-19 2015-05-26 에이에스엠 아메리카, 인코포레이티드 고온 원자층 증착용 인렛 매니폴드
US20070209593A1 (en) * 2006-03-07 2007-09-13 Ravinder Aggarwal Semiconductor wafer cooling device
US20070283709A1 (en) * 2006-06-09 2007-12-13 Veeco Instruments Inc. Apparatus and methods for managing the temperature of a substrate in a high vacuum processing system
US7763869B2 (en) * 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
TWI472882B (zh) * 2008-05-06 2015-02-11 Novellus Systems Inc 光阻剝離方法及設備
WO2010026772A1 (ja) * 2008-09-04 2010-03-11 キヤノンアネルバ株式会社 基板冷却方法及び半導体の製造方法
AU2009319350B2 (en) * 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
US8297342B2 (en) * 2009-06-29 2012-10-30 International Business Machines Corporation Heat sink assembly
CN101988191B (zh) * 2010-12-01 2012-05-16 东莞宏威数码机械有限公司 基板卸载装置及卸载方法
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
WO2013103594A1 (en) 2012-01-06 2013-07-11 Novellus Systems, Inc. Adaptive heat transfer methods and systems for uniform heat transfer
CN104037113B (zh) * 2013-03-04 2018-05-08 中微半导体设备(上海)有限公司 等离子体处理腔室的供气装置以及去夹持方法
US9378992B2 (en) * 2014-06-27 2016-06-28 Axcelis Technologies, Inc. High throughput heated ion implantation system and method
US9607803B2 (en) 2015-08-04 2017-03-28 Axcelis Technologies, Inc. High throughput cooled ion implantation system and method
JP6443582B2 (ja) * 2016-03-10 2018-12-26 三菱電機株式会社 基板吸着ステージ、基板処理装置、基板処理方法
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566960A (en) * 1969-08-18 1971-03-02 Robley V Stuart Cooling apparatus for vacuum chamber
CH544274A (de) * 1971-10-27 1973-11-15 Balzers Patent Beteilig Ag Einrichtung zum Kühlen von Werkstücken, die einer Behandlung im Vakuum unterworfen werden
JPS5016076A (de) * 1973-06-18 1975-02-20
US4072188A (en) * 1975-07-02 1978-02-07 Honeywell Information Systems Inc. Fluid cooling systems for electronic systems
US3993123A (en) * 1975-10-28 1976-11-23 International Business Machines Corporation Gas encapsulated cooling module
US4139051A (en) * 1976-09-07 1979-02-13 Rockwell International Corporation Method and apparatus for thermally stabilizing workpieces
US4194233A (en) * 1978-01-30 1980-03-18 Rockwell International Corporation Mask apparatus for fine-line lithography
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
EP0017472A1 (de) * 1979-04-06 1980-10-15 Lintott Engineering Limited Vakuumapparatur mit einer Vorrichtung zur Wärmeübertragung und Verfahren zur Herstellung von Halbleiterkomponenten unter Anwendung dieser Apparatus
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4680061A (en) * 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
JPS57206046A (en) * 1981-06-15 1982-12-17 Hitachi Ltd Wafer conveying device
US4508161A (en) * 1982-05-25 1985-04-02 Varian Associates, Inc. Method for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS5913327A (ja) * 1982-07-15 1984-01-24 Toshiba Corp ドライエツチング装置
JPS5994435A (ja) * 1982-11-20 1984-05-31 Tokuda Seisakusho Ltd 真空処理装置
JPS59154386A (ja) * 1983-02-23 1984-09-03 株式会社東芝 核融合装置のバンパリミタ
US4542298A (en) * 1983-06-09 1985-09-17 Varian Associates, Inc. Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
JPH0622213B2 (ja) * 1983-11-28 1994-03-23 株式会社日立製作所 試料の温度制御方法及び装置
US4603466A (en) * 1984-02-17 1986-08-05 Gca Corporation Wafer chuck
US4567938A (en) * 1984-05-02 1986-02-04 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
JPS6130237U (ja) * 1984-07-26 1986-02-24 日立電子エンジニアリング株式会社 ウエハ処理装置のウエハロ−ド機構
JPS61159570A (ja) * 1984-12-31 1986-07-19 Tokyo Erekutoron Kk イオン注入装置
JPS6261334A (ja) * 1985-09-11 1987-03-18 Hitachi Ltd パタ−ンの形成方法
DE3650057T2 (de) * 1985-10-24 1995-02-16 Texas Instruments Inc System für Vakuumbehandlung.

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JP2717308B2 (ja) 1998-02-18
EP0342940A3 (de) 1991-05-08
DE68928468D1 (de) 1998-01-15
EP0342940B1 (de) 1997-12-03
DE342940T1 (de) 1995-06-08
US4949783A (en) 1990-08-21
EP0342940A2 (de) 1989-11-23
JPH0230128A (ja) 1990-01-31

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