DE68918030D1 - Leseverstärker mit niedriger Leistung für eine programmierbare logische Einrichtung. - Google Patents
Leseverstärker mit niedriger Leistung für eine programmierbare logische Einrichtung.Info
- Publication number
- DE68918030D1 DE68918030D1 DE68918030T DE68918030T DE68918030D1 DE 68918030 D1 DE68918030 D1 DE 68918030D1 DE 68918030 T DE68918030 T DE 68918030T DE 68918030 T DE68918030 T DE 68918030T DE 68918030 D1 DE68918030 D1 DE 68918030D1
- Authority
- DE
- Germany
- Prior art keywords
- low power
- programmable logic
- sense amplifier
- logic device
- power sense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17704—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
- H03K19/17708—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns using an AND matrix followed by an OR matrix, i.e. programmable logic arrays
- H03K19/17712—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns using an AND matrix followed by an OR matrix, i.e. programmable logic arrays one of the matrices at least being reprogrammable
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/04—Shaping pulses by increasing duration; by decreasing duration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Read Only Memory (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/240,089 US4851720A (en) | 1988-09-02 | 1988-09-02 | Low power sense amplifier for programmable logic device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918030D1 true DE68918030D1 (de) | 1994-10-13 |
DE68918030T2 DE68918030T2 (de) | 1995-05-18 |
Family
ID=22905076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918030T Expired - Fee Related DE68918030T2 (de) | 1988-09-02 | 1989-07-24 | Leseverstärker mit niedriger Leistung für eine programmierbare logische Einrichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4851720A (de) |
EP (1) | EP0357213B1 (de) |
JP (1) | JP2858134B2 (de) |
DE (1) | DE68918030T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0793032B2 (ja) * | 1989-04-27 | 1995-10-09 | 日本電気株式会社 | 半導体記憶装置 |
US4963769A (en) * | 1989-05-08 | 1990-10-16 | Cypress Semiconductor | Circuit for selective power-down of unused circuitry |
KR920001325B1 (ko) * | 1989-06-10 | 1992-02-10 | 삼성전자 주식회사 | 메모리 소자내의 센스 앰프 드라이버 |
US5163168A (en) * | 1990-03-30 | 1992-11-10 | Matsushita Electric Industrial Co., Ltd. | Pulse signal generator and redundancy selection signal generator |
JP2789779B2 (ja) * | 1990-04-14 | 1998-08-20 | 日本電気株式会社 | メモリ装置 |
US5247213A (en) * | 1990-05-08 | 1993-09-21 | Advanced Micro Devices, Inc. | Programmable sense amplifier power reduction |
US5051620A (en) * | 1990-07-31 | 1991-09-24 | Burgin Kenneth N | Precharged logic systems with protection against current leakage |
US5450608A (en) * | 1993-04-15 | 1995-09-12 | Intel Corporation | Programmable logic having selectable output states for initialization and resets asynchronously using control bit associated with each product term |
US5572150A (en) * | 1995-04-10 | 1996-11-05 | International Business Machines Corporation | Low power pre-discharged ratio logic |
US5712790A (en) * | 1995-04-11 | 1998-01-27 | International Business Machines Corporation | Method of power reduction in pla's |
US5719505A (en) * | 1995-04-11 | 1998-02-17 | International Business Machines Corporation | Reduced power PLA |
US5565791A (en) * | 1995-07-07 | 1996-10-15 | Cypress Semiconductor Corporation | Method and apparatus for disabling unused sense amplifiers |
US5666310A (en) * | 1996-01-30 | 1997-09-09 | Cypress Semiconductor | High-speed sense amplifier having variable current level trip point |
JP3717388B2 (ja) * | 2000-09-27 | 2005-11-16 | 株式会社リコー | 基準電圧発生回路及びその出力値調整方法並びに電源装置 |
US7126869B1 (en) | 2003-06-26 | 2006-10-24 | Cypress Semiconductor Corp. | Sense amplifier with dual cascode transistors and improved noise margin |
US7400167B2 (en) * | 2005-08-16 | 2008-07-15 | Altera Corporation | Apparatus and methods for optimizing the performance of programmable logic devices |
US7505341B2 (en) * | 2006-05-17 | 2009-03-17 | Micron Technology, Inc. | Low voltage sense amplifier and sensing method |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4124899A (en) * | 1977-05-23 | 1978-11-07 | Monolithic Memories, Inc. | Programmable array logic circuit |
US4658158A (en) * | 1980-07-03 | 1987-04-14 | Xerox Corporation | Voltage sense amplifier using NMOS |
JPS57117188A (en) * | 1981-01-12 | 1982-07-21 | Toshiba Corp | Sense amplifier circuit |
DE3279855D1 (en) * | 1981-12-29 | 1989-09-07 | Fujitsu Ltd | Nonvolatile semiconductor memory circuit |
US4599525A (en) * | 1983-02-02 | 1986-07-08 | Rockwell International Corporation | De-glitch circuitry for video game memories |
JPS59181829A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 半導体素子の出力バツフア回路 |
US4725984A (en) * | 1984-02-21 | 1988-02-16 | Seeq Technology, Inc. | CMOS eprom sense amplifier |
US4617479B1 (en) * | 1984-05-03 | 1993-09-21 | Altera Semiconductor Corp. | Programmable logic array device using eprom technology |
US4604732A (en) * | 1984-05-29 | 1986-08-05 | Thomson Components-Mostek Corporation | Power supply dependent voltage reference circuit |
US4609986A (en) * | 1984-06-14 | 1986-09-02 | Altera Corporation | Programmable logic array device using EPROM technology |
JPH0736273B2 (ja) * | 1984-11-26 | 1995-04-19 | 株式会社日立製作所 | 半導体集積回路 |
JPH0793028B2 (ja) * | 1984-12-22 | 1995-10-09 | 日本テキサス・インスツルメンツ株式会社 | 半導体記憶装置 |
US4805150A (en) * | 1984-12-25 | 1989-02-14 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory device having grouped high voltage supply circuits for writing data |
JPS621191A (ja) * | 1985-03-11 | 1987-01-07 | Nec Ic Microcomput Syst Ltd | 信号出力回路 |
JPS6214520A (ja) * | 1985-07-12 | 1987-01-23 | Sony Corp | メモリの出力バツフア回路 |
US4727519A (en) * | 1985-11-25 | 1988-02-23 | Motorola, Inc. | Memory device including a clock generator with process tracking |
JPS62197996A (ja) * | 1986-02-24 | 1987-09-01 | Toshiba Corp | 半導体メモリのセンスアンプ |
JPS62231500A (ja) * | 1986-03-31 | 1987-10-12 | Toshiba Corp | 半導体記憶装置 |
FR2609831B1 (fr) * | 1987-01-16 | 1989-03-31 | Thomson Semiconducteurs | Circuit de lecture pour memoire |
-
1988
- 1988-09-02 US US07/240,089 patent/US4851720A/en not_active Expired - Lifetime
-
1989
- 1989-07-24 EP EP89307499A patent/EP0357213B1/de not_active Expired - Lifetime
- 1989-07-24 DE DE68918030T patent/DE68918030T2/de not_active Expired - Fee Related
- 1989-09-01 JP JP22473589A patent/JP2858134B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH02101699A (ja) | 1990-04-13 |
EP0357213A3 (de) | 1991-05-22 |
EP0357213A2 (de) | 1990-03-07 |
DE68918030T2 (de) | 1995-05-18 |
US4851720A (en) | 1989-07-25 |
JP2858134B2 (ja) | 1999-02-17 |
EP0357213B1 (de) | 1994-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |