DE68907184T2 - Verfahren zur zuechtung von kristallen und tiegel dafuer. - Google Patents

Verfahren zur zuechtung von kristallen und tiegel dafuer.

Info

Publication number
DE68907184T2
DE68907184T2 DE8989312340T DE68907184T DE68907184T2 DE 68907184 T2 DE68907184 T2 DE 68907184T2 DE 8989312340 T DE8989312340 T DE 8989312340T DE 68907184 T DE68907184 T DE 68907184T DE 68907184 T2 DE68907184 T2 DE 68907184T2
Authority
DE
Germany
Prior art keywords
pots
therefor
growing crystals
crystals
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8989312340T
Other languages
English (en)
Other versions
DE68907184D1 (de
Inventor
Jim E Clemans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE68907184D1 publication Critical patent/DE68907184D1/de
Publication of DE68907184T2 publication Critical patent/DE68907184T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
DE8989312340T 1988-12-05 1989-11-28 Verfahren zur zuechtung von kristallen und tiegel dafuer. Expired - Lifetime DE68907184T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/280,059 US4946542A (en) 1988-12-05 1988-12-05 Crystal growth method in crucible with step portion

Publications (2)

Publication Number Publication Date
DE68907184D1 DE68907184D1 (de) 1993-07-22
DE68907184T2 true DE68907184T2 (de) 1993-09-23

Family

ID=23071476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989312340T Expired - Lifetime DE68907184T2 (de) 1988-12-05 1989-11-28 Verfahren zur zuechtung von kristallen und tiegel dafuer.

Country Status (5)

Country Link
US (1) US4946542A (de)
EP (1) EP0372794B1 (de)
JP (1) JPH02188486A (de)
DE (1) DE68907184T2 (de)
HK (1) HK26994A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007038851A1 (de) * 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
US5123996A (en) * 1991-01-28 1992-06-23 At&T Bell Laboratories Crystal growth method and apparatus
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
DE69230962T2 (de) * 1991-08-22 2000-10-05 Raytheon Co Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/Kuppel
JPH0570288A (ja) * 1991-09-09 1993-03-23 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
US5372088A (en) * 1991-12-30 1994-12-13 At&T Bell Laboratories Crystal growth method and apparatus
US6143070A (en) * 1998-05-15 2000-11-07 The United States Of America As Represented By The Secretary Of The Air Force Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
US6423136B1 (en) 2000-03-20 2002-07-23 Carl Francis Swinehart Crucible for growing macrocrystals
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
US6277351B1 (en) 2000-03-20 2001-08-21 Carl Francis Swinehart Crucible for growing macrocrystals
DE10056476B4 (de) * 2000-11-15 2012-05-03 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Verfahren zu dessen Herstellung
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
CN102906314B (zh) * 2010-05-21 2015-09-30 住友电气工业株式会社 用于晶体生长的热分解氮化硼容器和使用该容器的半导体晶体生长方法
US10455680B2 (en) 2016-02-29 2019-10-22 Asml Netherlands B.V. Method and apparatus for purifying target material for EUV light source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
DD131725B1 (de) * 1977-03-09 1979-03-28 Lars Ickert Vorrichtung zur herstellung von einkristallen aus der schmelze
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
JPS58130190A (ja) * 1982-01-26 1983-08-03 Seiko Instr & Electronics Ltd 単結晶育成用ルツボ
US4632686A (en) * 1986-02-24 1986-12-30 Gte Products Corporation Method of manufacturing quartz glass crucibles with low bubble content
JPH01246190A (ja) * 1988-03-26 1989-10-02 Nippon Telegr & Teleph Corp <Ntt> 結晶成長用容器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007038851A1 (de) * 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern

Also Published As

Publication number Publication date
JPH02188486A (ja) 1990-07-24
EP0372794B1 (de) 1993-06-16
EP0372794A1 (de) 1990-06-13
US4946542A (en) 1990-08-07
HK26994A (en) 1994-03-31
DE68907184D1 (de) 1993-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN