HK26994A - Crystal growth method and crucible therefor - Google Patents

Crystal growth method and crucible therefor

Info

Publication number
HK26994A
HK26994A HK269/94A HK26994A HK26994A HK 26994 A HK26994 A HK 26994A HK 269/94 A HK269/94 A HK 269/94A HK 26994 A HK26994 A HK 26994A HK 26994 A HK26994 A HK 26994A
Authority
HK
Hong Kong
Prior art keywords
crucible
therefor
crystal growth
growth method
crystal
Prior art date
Application number
HK269/94A
Other languages
English (en)
Inventor
Jim E Clemans
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of HK26994A publication Critical patent/HK26994A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
HK269/94A 1988-12-05 1994-03-24 Crystal growth method and crucible therefor HK26994A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/280,059 US4946542A (en) 1988-12-05 1988-12-05 Crystal growth method in crucible with step portion

Publications (1)

Publication Number Publication Date
HK26994A true HK26994A (en) 1994-03-31

Family

ID=23071476

Family Applications (1)

Application Number Title Priority Date Filing Date
HK269/94A HK26994A (en) 1988-12-05 1994-03-24 Crystal growth method and crucible therefor

Country Status (5)

Country Link
US (1) US4946542A (xx)
EP (1) EP0372794B1 (xx)
JP (1) JPH02188486A (xx)
DE (1) DE68907184T2 (xx)
HK (1) HK26994A (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
US5123996A (en) * 1991-01-28 1992-06-23 At&T Bell Laboratories Crystal growth method and apparatus
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
DE69233617D1 (de) * 1991-08-22 2006-05-24 Raytheon Co Verfahren zum Entfernen einer B2O3-Einkapselungsmasse von einer Struktur
JPH0570288A (ja) * 1991-09-09 1993-03-23 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
US5372088A (en) * 1991-12-30 1994-12-13 At&T Bell Laboratories Crystal growth method and apparatus
US6143070A (en) * 1998-05-15 2000-11-07 The United States Of America As Represented By The Secretary Of The Air Force Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
US6423136B1 (en) 2000-03-20 2002-07-23 Carl Francis Swinehart Crucible for growing macrocrystals
US6277351B1 (en) 2000-03-20 2001-08-21 Carl Francis Swinehart Crucible for growing macrocrystals
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
DE10056476B4 (de) * 2000-11-15 2012-05-03 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Verfahren zu dessen Herstellung
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
DE102007038851A1 (de) 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
CN102906314B (zh) * 2010-05-21 2015-09-30 住友电气工业株式会社 用于晶体生长的热分解氮化硼容器和使用该容器的半导体晶体生长方法
US10455680B2 (en) 2016-02-29 2019-10-22 Asml Netherlands B.V. Method and apparatus for purifying target material for EUV light source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
DD131725B1 (de) * 1977-03-09 1979-03-28 Lars Ickert Vorrichtung zur herstellung von einkristallen aus der schmelze
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
JPS58130190A (ja) * 1982-01-26 1983-08-03 Seiko Instr & Electronics Ltd 単結晶育成用ルツボ
US4632686A (en) * 1986-02-24 1986-12-30 Gte Products Corporation Method of manufacturing quartz glass crucibles with low bubble content
JPH01246190A (ja) * 1988-03-26 1989-10-02 Nippon Telegr & Teleph Corp <Ntt> 結晶成長用容器

Also Published As

Publication number Publication date
DE68907184T2 (de) 1993-09-23
DE68907184D1 (de) 1993-07-22
EP0372794B1 (en) 1993-06-16
EP0372794A1 (en) 1990-06-13
JPH02188486A (ja) 1990-07-24
US4946542A (en) 1990-08-07

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)