HK26994A - Crystal growth method and crucible therefor - Google Patents

Crystal growth method and crucible therefor

Info

Publication number
HK26994A
HK26994A HK269/94A HK26994A HK26994A HK 26994 A HK26994 A HK 26994A HK 269/94 A HK269/94 A HK 269/94A HK 26994 A HK26994 A HK 26994A HK 26994 A HK26994 A HK 26994A
Authority
HK
Hong Kong
Prior art keywords
crucible
therefor
crystal growth
growth method
crystal
Prior art date
Application number
HK269/94A
Other languages
English (en)
Inventor
Jim E Clemans
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of HK26994A publication Critical patent/HK26994A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
HK269/94A 1988-12-05 1994-03-24 Crystal growth method and crucible therefor HK26994A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/280,059 US4946542A (en) 1988-12-05 1988-12-05 Crystal growth method in crucible with step portion

Publications (1)

Publication Number Publication Date
HK26994A true HK26994A (en) 1994-03-31

Family

ID=23071476

Family Applications (1)

Application Number Title Priority Date Filing Date
HK269/94A HK26994A (en) 1988-12-05 1994-03-24 Crystal growth method and crucible therefor

Country Status (5)

Country Link
US (1) US4946542A (de)
EP (1) EP0372794B1 (de)
JP (1) JPH02188486A (de)
DE (1) DE68907184T2 (de)
HK (1) HK26994A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
US5123996A (en) * 1991-01-28 1992-06-23 At&T Bell Laboratories Crystal growth method and apparatus
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
EP0906971A3 (de) * 1991-08-22 2002-01-30 Raytheon Company Verfahren zur Herstellung eines Verbindunghalbleitermaterials
JPH0570288A (ja) * 1991-09-09 1993-03-23 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
US5372088A (en) * 1991-12-30 1994-12-13 At&T Bell Laboratories Crystal growth method and apparatus
US6143070A (en) * 1998-05-15 2000-11-07 The United States Of America As Represented By The Secretary Of The Air Force Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
US6277351B1 (en) 2000-03-20 2001-08-21 Carl Francis Swinehart Crucible for growing macrocrystals
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
US6423136B1 (en) 2000-03-20 2002-07-23 Carl Francis Swinehart Crucible for growing macrocrystals
DE10056476B4 (de) * 2000-11-15 2012-05-03 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Verfahren zu dessen Herstellung
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
DE102007038851A1 (de) * 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
DE112011101731B4 (de) * 2010-05-21 2018-03-22 Sumitomo Electric Industries, Ltd. Behälter aus pyrolytischem Bornitrid zum Wachsen eines Kristalls, und Verwendung des Behälters
US10455680B2 (en) * 2016-02-29 2019-10-22 Asml Netherlands B.V. Method and apparatus for purifying target material for EUV light source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
DD131725B1 (de) * 1977-03-09 1979-03-28 Lars Ickert Vorrichtung zur herstellung von einkristallen aus der schmelze
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
JPS58130190A (ja) * 1982-01-26 1983-08-03 Seiko Instr & Electronics Ltd 単結晶育成用ルツボ
US4632686A (en) * 1986-02-24 1986-12-30 Gte Products Corporation Method of manufacturing quartz glass crucibles with low bubble content
JPH01246190A (ja) * 1988-03-26 1989-10-02 Nippon Telegr & Teleph Corp <Ntt> 結晶成長用容器

Also Published As

Publication number Publication date
JPH02188486A (ja) 1990-07-24
EP0372794A1 (de) 1990-06-13
US4946542A (en) 1990-08-07
DE68907184T2 (de) 1993-09-23
DE68907184D1 (de) 1993-07-22
EP0372794B1 (de) 1993-06-16

Similar Documents

Publication Publication Date Title
GB2271466B (en) Crystal growth method
GB2163672B (en) Single crystal growth apparatus
EP0368651A3 (en) Epitaxial growth process and growing apparatus
EP0476713A3 (en) Method for forming crystal and crystal article obtained by said method
EP0229322A3 (en) Method and apparatus for czochralski single crystal growing
EP0567008A3 (de) Verfahren zur Züchtung mehrerer Einkristalle und Vorrichtung zu dessen Anwendung.
HK26994A (en) Crystal growth method and crucible therefor
EP0431415A3 (en) Method and apparatus for epitaxially growing chemical-compound crystal
GB8903335D0 (en) Hair-restorer and process for hair growth
AU6711087A (en) Plant growth and development apparatus and techniques
GB2115310B (en) Iridium-rhenium crucible and process for growing a crystal in said crucible
GB2191112B (en) Method of and device for growing single crystals.
EP0330189A3 (en) Semiconductor crystal pulling method
GB2210287B (en) An apparatus and process for edge-defined, film-fed crystal growth
AU3500489A (en) Method for doping a melt and crystals grown therefrom
AU2045088A (en) Method for growth of crystal
HK78196A (en) Crystal growth method and apparatus
EP0553677A3 (en) Monocrystal growing method
GB2239380B (en) Plant growth and display unit
AU2914792A (en) Crucible and method for its use
IL86032A0 (en) Method for influencing plant growth using 1-imidazolylindane and 1-imidazolyltetraline derivatives
GB2193035B (en) Material for light emitting element and method for crystal growth thereof
CS628188A1 (en) Crucible assembly for crystal growing
GB2199171B (en) Method for controlling a display and a display
AU2150188A (en) Crystal growth method

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)