JPH02188486A - 結晶の成長法 - Google Patents
結晶の成長法Info
- Publication number
- JPH02188486A JPH02188486A JP1314482A JP31448289A JPH02188486A JP H02188486 A JPH02188486 A JP H02188486A JP 1314482 A JP1314482 A JP 1314482A JP 31448289 A JP31448289 A JP 31448289A JP H02188486 A JPH02188486 A JP H02188486A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal
- encapsulant
- semiconductor
- process according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 82
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 19
- 238000007373 indentation Methods 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 230000008014 freezing Effects 0.000 claims abstract description 4
- 238000007710 freezing Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229910052810 boron oxide Inorganic materials 0.000 claims description 21
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 230000001052 transient effect Effects 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 23
- 239000007788 liquid Substances 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007511 glassblowing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US280,059 | 1988-12-05 | ||
| US07/280,059 US4946542A (en) | 1988-12-05 | 1988-12-05 | Crystal growth method in crucible with step portion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02188486A true JPH02188486A (ja) | 1990-07-24 |
Family
ID=23071476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1314482A Pending JPH02188486A (ja) | 1988-12-05 | 1989-12-05 | 結晶の成長法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4946542A (de) |
| EP (1) | EP0372794B1 (de) |
| JP (1) | JPH02188486A (de) |
| DE (1) | DE68907184T2 (de) |
| HK (1) | HK26994A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112011101731T5 (de) | 2010-05-21 | 2013-03-21 | Sumitomo Electric Industries, Ltd. | Behälter aus pyrolytischem Bornitrid zum Wachsen eines Kristalls, und ein Verfahren zum Wachsen eines Halbleiterkristalls unter Verwendung des Behälters |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5064497A (en) * | 1990-03-09 | 1991-11-12 | At&T Bell Laboratories | Crystal growth method and apparatus |
| US5123996A (en) * | 1991-01-28 | 1992-06-23 | At&T Bell Laboratories | Crystal growth method and apparatus |
| US5169486A (en) * | 1991-03-06 | 1992-12-08 | Bestal Corporation | Crystal growth apparatus and process |
| EP0906971A3 (de) * | 1991-08-22 | 2002-01-30 | Raytheon Company | Verfahren zur Herstellung eines Verbindunghalbleitermaterials |
| JPH0570288A (ja) * | 1991-09-09 | 1993-03-23 | Toshiba Corp | 化合物半導体単結晶の製造方法及び製造装置 |
| US5372088A (en) * | 1991-12-30 | 1994-12-13 | At&T Bell Laboratories | Crystal growth method and apparatus |
| US6143070A (en) * | 1998-05-15 | 2000-11-07 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-germanium bulk alloy growth by liquid encapsulated zone melting |
| US6423136B1 (en) | 2000-03-20 | 2002-07-23 | Carl Francis Swinehart | Crucible for growing macrocrystals |
| US6277351B1 (en) | 2000-03-20 | 2001-08-21 | Carl Francis Swinehart | Crucible for growing macrocrystals |
| US6200385B1 (en) * | 2000-03-20 | 2001-03-13 | Carl Francis Swinehart | Crucible for growing macrocrystals |
| DE10056476B4 (de) * | 2000-11-15 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Verfahren zu dessen Herstellung |
| US8747554B2 (en) * | 2006-06-20 | 2014-06-10 | Momentive Performance Materials Inc. | Multi-piece ceramic crucible and method for making thereof |
| DE102007038851A1 (de) * | 2007-08-16 | 2009-02-19 | Schott Ag | Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern |
| US10455680B2 (en) | 2016-02-29 | 2019-10-22 | Asml Netherlands B.V. | Method and apparatus for purifying target material for EUV light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58130190A (ja) * | 1982-01-26 | 1983-08-03 | Seiko Instr & Electronics Ltd | 単結晶育成用ルツボ |
| JPH01246190A (ja) * | 1988-03-26 | 1989-10-02 | Nippon Telegr & Teleph Corp <Ntt> | 結晶成長用容器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1352449A (en) * | 1970-07-28 | 1974-05-08 | Sumitomo Electric Industries | Semiconductor production |
| DD131725B1 (de) * | 1977-03-09 | 1979-03-28 | Lars Ickert | Vorrichtung zur herstellung von einkristallen aus der schmelze |
| US4404172A (en) * | 1981-01-05 | 1983-09-13 | Western Electric Company, Inc. | Method and apparatus for forming and growing a single crystal of a semiconductor compound |
| US4632686A (en) * | 1986-02-24 | 1986-12-30 | Gte Products Corporation | Method of manufacturing quartz glass crucibles with low bubble content |
-
1988
- 1988-12-05 US US07/280,059 patent/US4946542A/en not_active Expired - Lifetime
-
1989
- 1989-11-28 DE DE8989312340T patent/DE68907184T2/de not_active Expired - Lifetime
- 1989-11-28 EP EP89312340A patent/EP0372794B1/de not_active Expired - Lifetime
- 1989-12-05 JP JP1314482A patent/JPH02188486A/ja active Pending
-
1994
- 1994-03-24 HK HK269/94A patent/HK26994A/xx not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58130190A (ja) * | 1982-01-26 | 1983-08-03 | Seiko Instr & Electronics Ltd | 単結晶育成用ルツボ |
| JPH01246190A (ja) * | 1988-03-26 | 1989-10-02 | Nippon Telegr & Teleph Corp <Ntt> | 結晶成長用容器 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112011101731T5 (de) | 2010-05-21 | 2013-03-21 | Sumitomo Electric Industries, Ltd. | Behälter aus pyrolytischem Bornitrid zum Wachsen eines Kristalls, und ein Verfahren zum Wachsen eines Halbleiterkristalls unter Verwendung des Behälters |
| JP5915178B2 (ja) * | 2010-05-21 | 2016-05-11 | 住友電気工業株式会社 | 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法 |
| DE112011101731B4 (de) | 2010-05-21 | 2018-03-22 | Sumitomo Electric Industries, Ltd. | Behälter aus pyrolytischem Bornitrid zum Wachsen eines Kristalls, und Verwendung des Behälters |
Also Published As
| Publication number | Publication date |
|---|---|
| US4946542A (en) | 1990-08-07 |
| DE68907184T2 (de) | 1993-09-23 |
| HK26994A (en) | 1994-03-31 |
| DE68907184D1 (de) | 1993-07-22 |
| EP0372794B1 (de) | 1993-06-16 |
| EP0372794A1 (de) | 1990-06-13 |
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