DE60326843D1 - Chreinen siliciumcarbid-kristallen - Google Patents

Chreinen siliciumcarbid-kristallen

Info

Publication number
DE60326843D1
DE60326843D1 DE60326843T DE60326843T DE60326843D1 DE 60326843 D1 DE60326843 D1 DE 60326843D1 DE 60326843 T DE60326843 T DE 60326843T DE 60326843 T DE60326843 T DE 60326843T DE 60326843 D1 DE60326843 D1 DE 60326843D1
Authority
DE
Germany
Prior art keywords
silicon carbide
crystal
point defects
chinery
carbide crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60326843T
Other languages
English (en)
Inventor
Jason Ronald Jenny
David Phillip Malta
Hudson Mcdonald Hobgood
Stephan Georg Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60326843D1 publication Critical patent/DE60326843D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Silicon Compounds (AREA)
DE60326843T 2002-06-24 2003-06-10 Chreinen siliciumcarbid-kristallen Expired - Lifetime DE60326843D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/064,232 US6814801B2 (en) 2002-06-24 2002-06-24 Method for producing semi-insulating resistivity in high purity silicon carbide crystals
PCT/US2003/018068 WO2004001836A1 (en) 2002-06-24 2003-06-10 Method for producing semi-insulating resistivity in high purity silicon carbide crystals

Publications (1)

Publication Number Publication Date
DE60326843D1 true DE60326843D1 (de) 2009-05-07

Family

ID=29731606

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60326843T Expired - Lifetime DE60326843D1 (de) 2002-06-24 2003-06-10 Chreinen siliciumcarbid-kristallen

Country Status (11)

Country Link
US (3) US6814801B2 (de)
EP (1) EP1516361B1 (de)
JP (1) JP4670006B2 (de)
KR (1) KR101024328B1 (de)
CN (1) CN100356524C (de)
AT (1) ATE426916T1 (de)
AU (1) AU2003237489A1 (de)
CA (1) CA2485594A1 (de)
DE (1) DE60326843D1 (de)
TW (1) TWI285404B (de)
WO (1) WO2004001836A1 (de)

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US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
JP6107450B2 (ja) * 2013-06-12 2017-04-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9245944B2 (en) * 2013-07-02 2016-01-26 Infineon Technologies Ag Silicon carbide device and a method for manufacturing a silicon carbide device
KR101537385B1 (ko) * 2013-12-05 2015-07-17 재단법인 포항산업과학연구원 탄화규소(SiC) 단결정 성장 방법
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
CN106757357B (zh) * 2017-01-10 2019-04-09 山东天岳先进材料科技有限公司 一种高纯半绝缘碳化硅衬底的制备方法
CN109280965B (zh) * 2018-10-16 2020-03-24 山东天岳先进材料科技有限公司 一种掺杂少量钒的高质量半绝缘碳化硅单晶及衬底
CN109338463B (zh) * 2018-10-16 2020-08-11 山东天岳先进材料科技有限公司 一种高纯碳化硅单晶衬底
KR102345680B1 (ko) * 2018-10-16 2021-12-29 에스아이씨씨 컴퍼니 리미티드 고순도 탄화규소 단결정 기판 및 그 제조 방법, 응용
TWI698397B (zh) 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
CN113073392A (zh) * 2021-03-31 2021-07-06 哈尔滨科友半导体产业装备与技术研究院有限公司 一种减少晶体热应力的处理方法

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Also Published As

Publication number Publication date
TW200409245A (en) 2004-06-01
ATE426916T1 (de) 2009-04-15
EP1516361B1 (de) 2009-03-25
US6814801B2 (en) 2004-11-09
CN1663033A (zh) 2005-08-31
US20090256162A1 (en) 2009-10-15
KR101024328B1 (ko) 2011-03-23
WO2004001836A1 (en) 2003-12-31
US9059118B2 (en) 2015-06-16
TWI285404B (en) 2007-08-11
AU2003237489A1 (en) 2004-01-06
JP4670006B2 (ja) 2011-04-13
JP2005531145A (ja) 2005-10-13
EP1516361A1 (de) 2005-03-23
US20040206298A1 (en) 2004-10-21
US20030233975A1 (en) 2003-12-25
CN100356524C (zh) 2007-12-19
KR20050013113A (ko) 2005-02-02
CA2485594A1 (en) 2003-12-31

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