KR20230110348A9 - 단결정로용 흑연 도가니 및 이의 제조 방법, 도가니 어셈블리 및 단결정로 - Google Patents

단결정로용 흑연 도가니 및 이의 제조 방법, 도가니 어셈블리 및 단결정로

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Publication number
KR20230110348A9
KR20230110348A9 KR1020237021553A KR20237021553A KR20230110348A9 KR 20230110348 A9 KR20230110348 A9 KR 20230110348A9 KR 1020237021553 A KR1020237021553 A KR 1020237021553A KR 20237021553 A KR20237021553 A KR 20237021553A KR 20230110348 A9 KR20230110348 A9 KR 20230110348A9
Authority
KR
South Korea
Prior art keywords
single crystal
crystal furnace
crucible
manufacturing
assembly
Prior art date
Application number
KR1020237021553A
Other languages
English (en)
Other versions
KR20230110348A (ko
Inventor
솽리 왕
천-훙 첸
Original Assignee
중환 어드밴스드 세미컨덕터 메테리얼즈 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 중환 어드밴스드 세미컨덕터 메테리얼즈 컴퍼니 리미티드 filed Critical 중환 어드밴스드 세미컨덕터 메테리얼즈 컴퍼니 리미티드
Publication of KR20230110348A publication Critical patent/KR20230110348A/ko
Publication of KR20230110348A9 publication Critical patent/KR20230110348A9/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020237021553A 2020-12-21 2021-12-17 단결정로용 흑연 도가니 및 이의 제조 방법, 도가니 어셈블리 및 단결정로 KR20230110348A9 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202011519963.4A CN112708932B (zh) 2020-12-21 2020-12-21 单晶炉的石墨坩埚及其制造方法、坩埚组件和单晶炉
CN202011519963.4 2020-12-21
PCT/CN2021/139236 WO2022135301A1 (zh) 2020-12-21 2021-12-17 单晶炉的石墨坩埚及其制造方法、坩埚组件和单晶炉

Publications (2)

Publication Number Publication Date
KR20230110348A KR20230110348A (ko) 2023-07-21
KR20230110348A9 true KR20230110348A9 (ko) 2024-03-25

Family

ID=75544832

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237021553A KR20230110348A9 (ko) 2020-12-21 2021-12-17 단결정로용 흑연 도가니 및 이의 제조 방법, 도가니 어셈블리 및 단결정로

Country Status (6)

Country Link
US (1) US20230323560A1 (ko)
JP (1) JP2023554477A (ko)
KR (1) KR20230110348A9 (ko)
CN (1) CN112708932B (ko)
TW (1) TW202240032A (ko)
WO (1) WO2022135301A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112708932B (zh) * 2020-12-21 2022-05-17 徐州鑫晶半导体科技有限公司 单晶炉的石墨坩埚及其制造方法、坩埚组件和单晶炉
CN113862779A (zh) * 2021-09-29 2021-12-31 西安奕斯伟材料科技有限公司 一种坩埚组件及拉晶炉
CN113935188B (zh) * 2021-11-01 2024-10-15 西安慧金科技有限公司 一种用等温热区优化交流电炉炉衬结构的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006017621B4 (de) * 2006-04-12 2008-12-24 Schott Ag Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
TW200821524A (en) * 2006-11-08 2008-05-16 Taiwan Advanced Materials Technologies Corp Manufacturing method and product of composite type crucible
TWM324067U (en) * 2007-05-22 2007-12-21 Sino American Silicon Products Crystal growth device
CN202744649U (zh) * 2012-06-06 2013-02-20 海润光伏科技股份有限公司 用于增大硅锭中大晶粒面积的热场结构
CN203333813U (zh) * 2013-06-06 2013-12-11 英利能源（中国）有限公司 一种带排气槽的单晶炉热场石墨埚
CN204417640U (zh) * 2014-12-11 2015-06-24 河北同光晶体有限公司 提高晶体生长速度的坩埚及晶体生长装置
CN207347695U (zh) * 2017-10-31 2018-05-11 河南省博宇新能源有限公司 多晶硅锭铸锭炉长晶均热坩埚结构
CN112708932B (zh) * 2020-12-21 2022-05-17 徐州鑫晶半导体科技有限公司 单晶炉的石墨坩埚及其制造方法、坩埚组件和单晶炉

Also Published As

Publication number Publication date
US20230323560A1 (en) 2023-10-12
KR20230110348A (ko) 2023-07-21
TW202240032A (zh) 2022-10-16
CN112708932A (zh) 2021-04-27
WO2022135301A1 (zh) 2022-06-30
JP2023554477A (ja) 2023-12-27
CN112708932B (zh) 2022-05-17

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