DE60307025D1 - Halbleiterlaserdiode mit Stegwellenleiter - Google Patents
Halbleiterlaserdiode mit StegwellenleiterInfo
- Publication number
- DE60307025D1 DE60307025D1 DE60307025T DE60307025T DE60307025D1 DE 60307025 D1 DE60307025 D1 DE 60307025D1 DE 60307025 T DE60307025 T DE 60307025T DE 60307025 T DE60307025 T DE 60307025T DE 60307025 D1 DE60307025 D1 DE 60307025D1
- Authority
- DE
- Germany
- Prior art keywords
- ridge
- insulating film
- laser diode
- protective insulating
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 3
- 230000002265 prevention Effects 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002340625 | 2002-11-25 | ||
JP2002340625 | 2002-11-25 | ||
JP2003305555 | 2003-08-28 | ||
JP2003305555 | 2003-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60307025D1 true DE60307025D1 (de) | 2006-09-07 |
DE60307025T2 DE60307025T2 (de) | 2007-02-22 |
Family
ID=32232733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60307025T Expired - Lifetime DE60307025T2 (de) | 2002-11-25 | 2003-11-24 | Halbleiterlaserdiode mit Stegwellenleiter |
Country Status (7)
Country | Link |
---|---|
US (1) | US7072374B2 (de) |
EP (1) | EP1422798B1 (de) |
KR (1) | KR100599362B1 (de) |
CN (2) | CN2724266Y (de) |
AT (1) | ATE334492T1 (de) |
DE (1) | DE60307025T2 (de) |
TW (1) | TWI303909B (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
KR100964399B1 (ko) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
KR100744933B1 (ko) * | 2003-10-13 | 2007-08-01 | 삼성전기주식회사 | 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법 |
JP4580633B2 (ja) * | 2003-11-14 | 2010-11-17 | スタンレー電気株式会社 | 半導体装置及びその製造方法 |
WO2005057744A1 (ja) * | 2003-12-15 | 2005-06-23 | The Furukawa Electric Co., Ltd. | 半導体素子の製造方法 |
US9166130B2 (en) * | 2012-10-24 | 2015-10-20 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
JP4704703B2 (ja) * | 2004-07-07 | 2011-06-22 | 株式会社リコー | アレイ型半導体レーザ装置 |
JP4956928B2 (ja) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | 半導体装置 |
US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US8802465B2 (en) | 2005-01-11 | 2014-08-12 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
JP2006269581A (ja) * | 2005-03-23 | 2006-10-05 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2006303299A (ja) * | 2005-04-22 | 2006-11-02 | Sharp Corp | 半導体レーザ |
KR101100425B1 (ko) * | 2005-05-07 | 2011-12-30 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
JP2007151807A (ja) * | 2005-12-05 | 2007-06-21 | Univ Meijo | 半導体発光素子による光線治療方法、及び半導体発光素子による光線治療システム |
JP4535997B2 (ja) * | 2005-12-09 | 2010-09-01 | シャープ株式会社 | 窒化物半導体レーザ素子およびその製造方法 |
CN101512783B (zh) * | 2006-05-02 | 2011-07-27 | 三菱化学株式会社 | 半导体发光元件 |
JP5150149B2 (ja) * | 2007-07-03 | 2013-02-20 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP4933370B2 (ja) * | 2007-07-17 | 2012-05-16 | 株式会社リコー | アレイ型半導体レーザ装置の組み立て方法 |
JP2009188273A (ja) * | 2008-02-07 | 2009-08-20 | Rohm Co Ltd | ジャンクションダウン型の光半導体素子及び光半導体装置 |
JP4697488B2 (ja) * | 2008-08-22 | 2011-06-08 | ソニー株式会社 | マルチビーム半導体レーザ |
JP2010267731A (ja) * | 2009-05-13 | 2010-11-25 | Panasonic Corp | 窒化物半導体レーザ装置 |
US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
CN103426935A (zh) | 2009-11-27 | 2013-12-04 | 株式会社半导体能源研究所 | 半导体装置和及其制造方法 |
KR101047652B1 (ko) | 2009-12-18 | 2011-07-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
US9166364B2 (en) * | 2011-02-14 | 2015-10-20 | Spectrasensors, Inc. | Semiconductor laser mounting with intact diffusion barrier layer |
US9368934B2 (en) | 2011-02-14 | 2016-06-14 | Spectrasensors, Inc. | Semiconductor laser mounting for improved frequency stability |
CN105490161B (zh) * | 2011-07-05 | 2022-12-30 | 日亚化学工业株式会社 | 半导体激光元件 |
JP6160141B2 (ja) * | 2012-03-22 | 2017-07-12 | 日亜化学工業株式会社 | 半導体レーザ装置 |
CN102882124B (zh) * | 2012-10-11 | 2014-08-06 | 长春理工大学 | 一种适用于倒焊装的半导体激光器芯片结构 |
US9601557B2 (en) * | 2012-11-16 | 2017-03-21 | Apple Inc. | Flexible display |
EP2741381B1 (de) | 2012-12-06 | 2020-05-06 | Nichia Corporation | Halbleiterlaserelement |
US9600112B2 (en) | 2014-10-10 | 2017-03-21 | Apple Inc. | Signal trace patterns for flexible substrates |
DE102015119146A1 (de) * | 2015-11-06 | 2017-05-11 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zum Herstellen eines Halbleiterlasers sowie Wafer |
US10892597B2 (en) * | 2016-07-14 | 2021-01-12 | Panasonic Corporation | Nitride semiconductor laser and nitride semiconductor laser device |
KR102550007B1 (ko) * | 2016-11-30 | 2023-07-03 | 서울바이오시스 주식회사 | 복수의 발광셀들을 가지는 발광 다이오드 |
KR20180075733A (ko) | 2016-12-26 | 2018-07-05 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
DE102016125857B4 (de) | 2016-12-29 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
KR102544296B1 (ko) * | 2018-09-13 | 2023-06-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치 |
JP6940572B2 (ja) * | 2019-01-29 | 2021-09-29 | シャープ株式会社 | 窒化物半導体レーザ素子および半導体レーザ装置 |
CN110518066B (zh) * | 2019-08-13 | 2022-08-02 | 深圳市矽赫科技有限公司 | 一种半导体欧姆接触结构 |
CN110620169B (zh) * | 2019-09-10 | 2020-08-28 | 北京工业大学 | 一种基于共振腔的横向电流限制高效率发光二极管 |
CN111755950A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | 电极部分覆盖脊条的dfb激光器 |
CN112636177B (zh) * | 2020-12-18 | 2022-06-24 | 中国科学院半导体研究所 | 改善大功率太赫兹半导体激光器散热的封装结构 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4424527A (en) * | 1981-07-31 | 1984-01-03 | Optical Information Systems, Inc. | Bonding pad metallization for semiconductor devices |
JPH03145178A (ja) * | 1989-10-30 | 1991-06-20 | Nec Corp | 半導体発光装置とその製造方法 |
US5436466A (en) * | 1992-08-19 | 1995-07-25 | Goldstar Co., Ltd. | Semiconductor laser diode |
US5429680A (en) * | 1993-11-19 | 1995-07-04 | Fuschetti; Dean F. | Thermoelectric heat pump |
US5559817A (en) * | 1994-11-23 | 1996-09-24 | Lucent Technologies Inc. | Complaint layer metallization |
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
JP3348024B2 (ja) | 1998-08-17 | 2002-11-20 | 松下電器産業株式会社 | 半導体レーザ装置 |
US6590322B2 (en) * | 2000-01-07 | 2003-07-08 | The United States Of America As Represented By The Secretary Of The Navy | Low gate current field emitter cell and array with vertical thin-film-edge emitter |
AU2001232297B2 (en) | 2000-02-16 | 2005-10-06 | Nichia Corporation | Nitride semiconductor laser device |
JP2002094181A (ja) * | 2000-09-14 | 2002-03-29 | Sony Corp | 半導体レーザ素子及びその作製方法 |
EP1387453B1 (de) * | 2001-04-12 | 2009-11-11 | Nichia Corporation | Halbleiterelement aus galliumnitridzusammensetzung |
WO2004014532A1 (en) | 2002-08-13 | 2004-02-19 | Itt Manufacturing Enterprises, Inc. | Strip diffuser pct i |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
-
2003
- 2003-10-27 TW TW092129758A patent/TWI303909B/zh not_active IP Right Cessation
- 2003-11-14 CN CN2003201167220U patent/CN2724266Y/zh not_active Expired - Lifetime
- 2003-11-14 CN CNB2003101149922A patent/CN1272886C/zh not_active Expired - Fee Related
- 2003-11-24 EP EP03026887A patent/EP1422798B1/de not_active Expired - Lifetime
- 2003-11-24 AT AT03026887T patent/ATE334492T1/de not_active IP Right Cessation
- 2003-11-24 DE DE60307025T patent/DE60307025T2/de not_active Expired - Lifetime
- 2003-11-24 KR KR1020030083459A patent/KR100599362B1/ko active IP Right Grant
- 2003-11-25 US US10/720,759 patent/US7072374B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1272886C (zh) | 2006-08-30 |
EP1422798B1 (de) | 2006-07-26 |
EP1422798A1 (de) | 2004-05-26 |
TWI303909B (en) | 2008-12-01 |
CN1503416A (zh) | 2004-06-09 |
KR20040045368A (ko) | 2004-06-01 |
US20040161010A1 (en) | 2004-08-19 |
ATE334492T1 (de) | 2006-08-15 |
CN2724266Y (zh) | 2005-09-07 |
DE60307025T2 (de) | 2007-02-22 |
KR100599362B1 (ko) | 2006-07-12 |
TW200415832A (en) | 2004-08-16 |
US7072374B2 (en) | 2006-07-04 |
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