DE60305103D1 - Ausgangstreiber mit Transistoren mit dünnen Gateoxid - Google Patents

Ausgangstreiber mit Transistoren mit dünnen Gateoxid

Info

Publication number
DE60305103D1
DE60305103D1 DE60305103T DE60305103T DE60305103D1 DE 60305103 D1 DE60305103 D1 DE 60305103D1 DE 60305103 T DE60305103 T DE 60305103T DE 60305103 T DE60305103 T DE 60305103T DE 60305103 D1 DE60305103 D1 DE 60305103D1
Authority
DE
Germany
Prior art keywords
channel
voltage
scaled
gate
channel device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60305103T
Other languages
English (en)
Other versions
DE60305103T2 (de
Inventor
James R Lundberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IP First LLC
Original Assignee
IP First LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IP First LLC filed Critical IP First LLC
Publication of DE60305103D1 publication Critical patent/DE60305103D1/de
Application granted granted Critical
Publication of DE60305103T2 publication Critical patent/DE60305103T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60305103T 2002-06-18 2003-06-18 Ausgangstreiber mit Transistoren mit dünnen Gateoxid Expired - Lifetime DE60305103T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US317240 1989-02-28
US39004402P 2002-06-18 2002-06-18
US390044P 2002-06-18
US10/317,240 US6870407B2 (en) 2002-06-18 2002-12-11 Thin gate oxide output drive

Publications (2)

Publication Number Publication Date
DE60305103D1 true DE60305103D1 (de) 2006-06-14
DE60305103T2 DE60305103T2 (de) 2006-10-05

Family

ID=29718521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305103T Expired - Lifetime DE60305103T2 (de) 2002-06-18 2003-06-18 Ausgangstreiber mit Transistoren mit dünnen Gateoxid

Country Status (4)

Country Link
US (1) US6870407B2 (de)
EP (1) EP1376874B1 (de)
AT (1) ATE326079T1 (de)
DE (1) DE60305103T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4054727B2 (ja) * 2003-07-14 2008-03-05 株式会社リコー 出力バッファ回路及び出力バッファ回路を使用したインタフェース回路
US7265600B2 (en) * 2005-10-04 2007-09-04 International Business Machines Corporation Level shifter system and method to minimize duty cycle error due to voltage differences across power domains
TW200826494A (en) * 2006-12-15 2008-06-16 Realtek Semiconductor Corp Output signal driving circuit and method of driving output signal
TWI374611B (en) * 2009-04-03 2012-10-11 Univ Nat Sun Yat Sen I/o buffer with twice supply voltage tolerance using normal supply voltage devices
US20120081165A1 (en) * 2010-09-30 2012-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage tolerative driver
KR101989571B1 (ko) 2012-06-27 2019-06-14 삼성전자주식회사 고전압 및 와이드 랜지 전압 동작을 위한 출력 드라이버 및 그것을 사용한 데이터 출력 드라이빙 회로
US9503090B2 (en) 2014-08-19 2016-11-22 International Business Machines Corporation High speed level translator
US10075157B1 (en) 2017-04-20 2018-09-11 International Business Machines Corporation Bidirectional interface using thin oxide devices
TWI685202B (zh) * 2018-11-20 2020-02-11 瑞昱半導體股份有限公司 反相器
US11108396B2 (en) 2020-01-31 2021-08-31 Nxp Usa, Inc. Multivoltage high voltage IO in low voltage technology
JP2024004786A (ja) * 2022-06-29 2024-01-17 株式会社デンソー ゲート駆動装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2842329B2 (ja) 1994-09-21 1999-01-06 日本電気株式会社 電圧レベルシフト回路
EP0703665B1 (de) 1994-09-21 2003-06-11 NEC Electronics Corporation Spannungspegel-Verschiebungsschaltung
US6147511A (en) 1996-05-28 2000-11-14 Altera Corporation Overvoltage-tolerant interface for integrated circuits
US6025737A (en) 1996-11-27 2000-02-15 Altera Corporation Circuitry for a low internal voltage integrated circuit
US6040708A (en) * 1997-01-02 2000-03-21 Texas Instruments Incorporated Output buffer having quasi-failsafe operation
US5995010A (en) 1997-01-02 1999-11-30 Texas Instruments Incorporated Output buffer providing testability
US5969542A (en) 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
US6040729A (en) 1997-08-25 2000-03-21 Motorola, Inc. Digital output buffer for multiple voltage system
US6081132A (en) * 1998-03-09 2000-06-27 Intel Corporation High voltage drive output buffer for low Voltage integrated circuits
US6127848A (en) * 1998-07-20 2000-10-03 National Semiconductor Corporation Voltage translator with gate oxide breakdown protection
US6130557A (en) 1999-04-26 2000-10-10 Ati Technologies, Inc. Three level pre-buffer voltage level shifting circuit and method
US6373282B1 (en) 1999-08-20 2002-04-16 Ati International Srl Single gate oxide cascaded output buffer stage and method
US6407579B1 (en) * 2000-01-20 2002-06-18 Koninklijke Philips Electronics N.V. Fast high voltage level shifter with gate oxide protection

Also Published As

Publication number Publication date
EP1376874B1 (de) 2006-05-10
ATE326079T1 (de) 2006-06-15
US6870407B2 (en) 2005-03-22
DE60305103T2 (de) 2006-10-05
EP1376874A8 (de) 2005-04-13
EP1376874A1 (de) 2004-01-02
US20030231044A1 (en) 2003-12-18

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