DE60301430T2 - Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents
Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung Download PDFInfo
- Publication number
- DE60301430T2 DE60301430T2 DE60301430T DE60301430T DE60301430T2 DE 60301430 T2 DE60301430 T2 DE 60301430T2 DE 60301430 T DE60301430 T DE 60301430T DE 60301430 T DE60301430 T DE 60301430T DE 60301430 T2 DE60301430 T2 DE 60301430T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- exposure apparatus
- projection exposure
- projection
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002112055A JP3720788B2 (ja) | 2002-04-15 | 2002-04-15 | 投影露光装置及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60301430D1 DE60301430D1 (de) | 2005-10-06 |
DE60301430T2 true DE60301430T2 (de) | 2006-06-14 |
Family
ID=28672571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60301430T Expired - Lifetime DE60301430T2 (de) | 2002-04-15 | 2003-04-14 | Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (2) | US6885432B2 (de) |
EP (1) | EP1355194B1 (de) |
JP (1) | JP3720788B2 (de) |
DE (1) | DE60301430T2 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004090955A1 (ja) * | 2003-04-04 | 2004-10-21 | Nikon Corporation | 照明光学装置、投影露光装置及び露光方法 |
CN1780880B (zh) * | 2003-04-25 | 2010-04-28 | 雷克特本克斯尔保健(英国)有限公司 | 可增稠的组合物 |
WO2004100236A1 (ja) * | 2003-05-09 | 2004-11-18 | Nikon Corporation | 照明光学系、投影露光装置、マイクロデバイスの製造方法、照明装置の製造方法、投影露光装置の調整方法、及び投影露光装置の製造方法 |
JP4241281B2 (ja) * | 2003-09-17 | 2009-03-18 | キヤノン株式会社 | 露光装置 |
JP2005141158A (ja) * | 2003-11-10 | 2005-06-02 | Canon Inc | 照明光学系及び露光装置 |
CN101677061B (zh) | 2004-03-26 | 2013-04-03 | 株式会社半导体能源研究所 | 激光辐照方法和激光辐照装置 |
US8525075B2 (en) * | 2004-05-06 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US7312851B2 (en) | 2004-06-23 | 2007-12-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop |
EP1768172B1 (de) | 2004-06-23 | 2010-02-10 | Nikon Corporation | Projektionsbelichtungsapparat |
US8304313B2 (en) * | 2004-08-23 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
US7274432B2 (en) * | 2004-10-29 | 2007-09-25 | Asml Netherlands B.V. | Radiation system, lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7423732B2 (en) * | 2004-11-04 | 2008-09-09 | Asml Holding N.V. | Lithographic apparatus and device manufacturing method utilizing placement of a patterning device at a pupil plane |
JP2006303370A (ja) | 2005-04-25 | 2006-11-02 | Canon Inc | 露光装置及びそれを用いたデバイス製造方法 |
WO2006118312A1 (en) * | 2005-05-02 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
JP2008544531A (ja) * | 2005-06-21 | 2008-12-04 | カール ツァイス エスエムテー アーゲー | 瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系 |
JP4708891B2 (ja) * | 2005-07-14 | 2011-06-22 | 新日鉄マテリアルズ株式会社 | 光学反射ミラー |
DE102006039760A1 (de) * | 2006-08-24 | 2008-03-13 | Carl Zeiss Smt Ag | Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität |
JP4989180B2 (ja) * | 2006-10-13 | 2012-08-01 | キヤノン株式会社 | 照明光学系および露光装置 |
US7920370B2 (en) * | 2007-02-05 | 2011-04-05 | Samsung Electro-Mechanics Co., Ltd. | Multilayer chip capacitor |
US20080297753A1 (en) * | 2007-05-31 | 2008-12-04 | Micron Technology, Inc. | Apparatus and method for defect-free microlithography |
DE102008033213A1 (de) | 2007-07-16 | 2009-01-22 | Carl Zeiss Smt Ag | Kombiblende für katoptrische Projektionsanordnung |
JP4986754B2 (ja) * | 2007-07-27 | 2012-07-25 | キヤノン株式会社 | 照明光学系及びそれを有する露光装置 |
JP5498385B2 (ja) * | 2007-10-02 | 2014-05-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ用の投影対物系 |
DE102008013229B4 (de) * | 2007-12-11 | 2015-04-09 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
JP5241270B2 (ja) * | 2008-02-27 | 2013-07-17 | キヤノン株式会社 | 照明光学系、これを用いた露光装置及びデバイス製造方法 |
NL1036771A1 (nl) * | 2008-04-22 | 2009-10-26 | Asml Netherlands Bv | Illumination System and Lithographic Method. |
JP5142892B2 (ja) * | 2008-09-03 | 2013-02-13 | キヤノン株式会社 | 照明光学系及び露光装置 |
DE102009034028A1 (de) * | 2009-03-30 | 2010-10-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
EP3113212B1 (de) * | 2014-02-24 | 2019-12-18 | Nikon Corporation | Mehrschichtiger reflektierender spiegel, verfahren zur herstellung davon und belichtungsvorrichtung |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2840905B2 (ja) | 1992-10-07 | 1998-12-24 | 三菱電機株式会社 | カウンタ回路 |
US5339346A (en) | 1993-05-20 | 1994-08-16 | At&T Bell Laboratories | Device fabrication entailing plasma-derived x-ray delineation |
JP3499592B2 (ja) * | 1994-01-31 | 2004-02-23 | 株式会社ルネサステクノロジ | 投影露光装置及びパターン転写方法 |
JP3706691B2 (ja) | 1996-08-26 | 2005-10-12 | キヤノン株式会社 | X線縮小投影露光装置及びこれを用いた半導体デバイス製造方法 |
WO1999005710A1 (fr) * | 1997-07-25 | 1999-02-04 | Nikon Corporation | Aligneur de projection, procede d'exposition a une projection, procede de nettoyage optique et procede de fabrication de dispositifs a semi-conducteurs |
AU1053199A (en) | 1997-11-14 | 1999-06-07 | Nikon Corporation | Exposure apparatus and method of manufacturing the same, and exposure method |
JP2001244168A (ja) * | 2000-02-25 | 2001-09-07 | Nikon Corp | 露光装置および該露光装置を用いてマイクロデバイスを製造する方法 |
JP4238390B2 (ja) | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
JP2000091220A (ja) * | 1998-09-08 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影露光方法 |
US6109756A (en) | 1998-09-21 | 2000-08-29 | Nikon Corporation | Catoptric reduction projection optical system |
US6213610B1 (en) | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
JP2000100694A (ja) * | 1998-09-22 | 2000-04-07 | Nikon Corp | 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法 |
JP2000244168A (ja) | 1999-02-23 | 2000-09-08 | Hochiki Corp | 高周波機器のシールド構造 |
KR100416081B1 (ko) | 1999-07-29 | 2004-01-31 | 삼성에스디아이 주식회사 | 플라즈마 표시 패널의 과전류 검출 장치 |
JP2001185480A (ja) * | 1999-10-15 | 2001-07-06 | Nikon Corp | 投影光学系及び該光学系を備える投影露光装置 |
JP2001209188A (ja) * | 2000-01-27 | 2001-08-03 | Nikon Corp | 走査型露光装置および走査露光方法並びにマスク |
-
2002
- 2002-04-15 JP JP2002112055A patent/JP3720788B2/ja not_active Expired - Fee Related
-
2003
- 2003-04-11 US US10/411,834 patent/US6885432B2/en not_active Expired - Fee Related
- 2003-04-14 DE DE60301430T patent/DE60301430T2/de not_active Expired - Lifetime
- 2003-04-14 EP EP03008596A patent/EP1355194B1/de not_active Expired - Lifetime
-
2004
- 2004-09-10 US US10/937,431 patent/US20050030510A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE60301430D1 (de) | 2005-10-06 |
US20040001190A1 (en) | 2004-01-01 |
US20050030510A1 (en) | 2005-02-10 |
EP1355194A3 (de) | 2004-10-13 |
EP1355194B1 (de) | 2005-08-31 |
EP1355194A2 (de) | 2003-10-22 |
JP2003309057A (ja) | 2003-10-31 |
US6885432B2 (en) | 2005-04-26 |
JP3720788B2 (ja) | 2005-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |