DE60301430T2 - Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung Download PDF

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Publication number
DE60301430T2
DE60301430T2 DE60301430T DE60301430T DE60301430T2 DE 60301430 T2 DE60301430 T2 DE 60301430T2 DE 60301430 T DE60301430 T DE 60301430T DE 60301430 T DE60301430 T DE 60301430T DE 60301430 T2 DE60301430 T2 DE 60301430T2
Authority
DE
Germany
Prior art keywords
manufacturing
exposure apparatus
projection exposure
projection
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60301430T
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English (en)
Other versions
DE60301430D1 (de
Inventor
Toshihiko Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60301430D1 publication Critical patent/DE60301430D1/de
Publication of DE60301430T2 publication Critical patent/DE60301430T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60301430T 2002-04-15 2003-04-14 Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung Expired - Lifetime DE60301430T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002112055A JP3720788B2 (ja) 2002-04-15 2002-04-15 投影露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
DE60301430D1 DE60301430D1 (de) 2005-10-06
DE60301430T2 true DE60301430T2 (de) 2006-06-14

Family

ID=28672571

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60301430T Expired - Lifetime DE60301430T2 (de) 2002-04-15 2003-04-14 Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung

Country Status (4)

Country Link
US (2) US6885432B2 (de)
EP (1) EP1355194B1 (de)
JP (1) JP3720788B2 (de)
DE (1) DE60301430T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090955A1 (ja) * 2003-04-04 2004-10-21 Nikon Corporation 照明光学装置、投影露光装置及び露光方法
RU2324711C2 (ru) * 2003-04-25 2008-05-20 РЕКИТТ БЕНКАЙЗЕР ХЕЛТКЭА (Ю Кей) ЛИМИТЕД Загущаемые композиции
JP4356695B2 (ja) * 2003-05-09 2009-11-04 株式会社ニコン 照明光学系、投影露光装置、マイクロデバイスの製造方法
JP4241281B2 (ja) * 2003-09-17 2009-03-18 キヤノン株式会社 露光装置
JP2005141158A (ja) * 2003-11-10 2005-06-02 Canon Inc 照明光学系及び露光装置
WO2005093801A1 (en) 2004-03-26 2005-10-06 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
KR100918335B1 (ko) 2004-06-23 2009-09-22 가부시키가이샤 니콘 투영 노광 장치
US7312851B2 (en) 2004-06-23 2007-12-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop
CN100530549C (zh) * 2004-08-23 2009-08-19 株式会社半导体能源研究所 激光照射设备、照射方法和制备半导体器件的方法
US7274432B2 (en) * 2004-10-29 2007-09-25 Asml Netherlands B.V. Radiation system, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7423732B2 (en) * 2004-11-04 2008-09-09 Asml Holding N.V. Lithographic apparatus and device manufacturing method utilizing placement of a patterning device at a pupil plane
JP2006303370A (ja) * 2005-04-25 2006-11-02 Canon Inc 露光装置及びそれを用いたデバイス製造方法
US8395084B2 (en) * 2005-05-02 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP2008544531A (ja) * 2005-06-21 2008-12-04 カール ツァイス エスエムテー アーゲー 瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系
JP4708891B2 (ja) * 2005-07-14 2011-06-22 新日鉄マテリアルズ株式会社 光学反射ミラー
DE102006039760A1 (de) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität
JP4989180B2 (ja) * 2006-10-13 2012-08-01 キヤノン株式会社 照明光学系および露光装置
US7920370B2 (en) * 2007-02-05 2011-04-05 Samsung Electro-Mechanics Co., Ltd. Multilayer chip capacitor
US20080297753A1 (en) * 2007-05-31 2008-12-04 Micron Technology, Inc. Apparatus and method for defect-free microlithography
US8208127B2 (en) 2007-07-16 2012-06-26 Carl Zeiss Smt Gmbh Combination stop for catoptric projection arrangement
JP4986754B2 (ja) * 2007-07-27 2012-07-25 キヤノン株式会社 照明光学系及びそれを有する露光装置
CN101815969B (zh) * 2007-10-02 2013-07-17 卡尔蔡司Smt有限责任公司 用于微光刻的投射物镜
DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
JP5241270B2 (ja) * 2008-02-27 2013-07-17 キヤノン株式会社 照明光学系、これを用いた露光装置及びデバイス製造方法
NL1036771A1 (nl) * 2008-04-22 2009-10-26 Asml Netherlands Bv Illumination System and Lithographic Method.
JP5142892B2 (ja) * 2008-09-03 2013-02-13 キヤノン株式会社 照明光学系及び露光装置
DE102009034028A1 (de) * 2009-03-30 2010-10-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
TWI643024B (zh) * 2014-02-24 2018-12-01 尼康股份有限公司 Multilayer film mirror, manufacturing method thereof and regeneration method, and exposure device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2840905B2 (ja) 1992-10-07 1998-12-24 三菱電機株式会社 カウンタ回路
US5339346A (en) 1993-05-20 1994-08-16 At&T Bell Laboratories Device fabrication entailing plasma-derived x-ray delineation
JP3499592B2 (ja) * 1994-01-31 2004-02-23 株式会社ルネサステクノロジ 投影露光装置及びパターン転写方法
JP3706691B2 (ja) 1996-08-26 2005-10-12 キヤノン株式会社 Ｘ線縮小投影露光装置及びこれを用いた半導体デバイス製造方法
WO1999005710A1 (fr) * 1997-07-25 1999-02-04 Nikon Corporation Aligneur de projection, procede d'exposition a une projection, procede de nettoyage optique et procede de fabrication de dispositifs a semi-conducteurs
AU1053199A (en) 1997-11-14 1999-06-07 Nikon Corporation Exposure apparatus and method of manufacturing the same, and exposure method
JP4238390B2 (ja) 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
JP2001244168A (ja) * 2000-02-25 2001-09-07 Nikon Corp 露光装置および該露光装置を用いてマイクロデバイスを製造する方法
JP2000091220A (ja) * 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
US6109756A (en) 1998-09-21 2000-08-29 Nikon Corporation Catoptric reduction projection optical system
US6213610B1 (en) 1998-09-21 2001-04-10 Nikon Corporation Catoptric reduction projection optical system and exposure apparatus and method using same
JP2000100694A (ja) * 1998-09-22 2000-04-07 Nikon Corp 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法
JP2000244168A (ja) 1999-02-23 2000-09-08 Hochiki Corp 高周波機器のシールド構造
KR100416081B1 (ko) 1999-07-29 2004-01-31 삼성에스디아이 주식회사 플라즈마 표시 패널의 과전류 검출 장치
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
JP2001209188A (ja) * 2000-01-27 2001-08-03 Nikon Corp 走査型露光装置および走査露光方法並びにマスク

Also Published As

Publication number Publication date
JP2003309057A (ja) 2003-10-31
EP1355194A2 (de) 2003-10-22
EP1355194B1 (de) 2005-08-31
DE60301430D1 (de) 2005-10-06
US20040001190A1 (en) 2004-01-01
US20050030510A1 (en) 2005-02-10
EP1355194A3 (de) 2004-10-13
JP3720788B2 (ja) 2005-11-30
US6885432B2 (en) 2005-04-26

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