DE60239683D1 - Wärmebehandlungsverfahren und wärmebehandslungseinrichtung - Google Patents

Wärmebehandlungsverfahren und wärmebehandslungseinrichtung

Info

Publication number
DE60239683D1
DE60239683D1 DE60239683T DE60239683T DE60239683D1 DE 60239683 D1 DE60239683 D1 DE 60239683D1 DE 60239683 T DE60239683 T DE 60239683T DE 60239683 T DE60239683 T DE 60239683T DE 60239683 D1 DE60239683 D1 DE 60239683D1
Authority
DE
Germany
Prior art keywords
heat treatment
batch size
workpiece
thermal processing
workpieces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239683T
Other languages
English (en)
Inventor
Koichi Sakamoto
Yuichi Takenaga
Takashi Yokota
Kazuhiro Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001240025A external-priority patent/JP2003051497A/ja
Priority claimed from JP2001338250A external-priority patent/JP3400996B1/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60239683D1 publication Critical patent/DE60239683D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
DE60239683T 2001-08-08 2002-08-05 Wärmebehandlungsverfahren und wärmebehandslungseinrichtung Expired - Lifetime DE60239683D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001240025A JP2003051497A (ja) 2001-08-08 2001-08-08 熱処理方法および熱処理装置
JP2001338250A JP3400996B1 (ja) 2001-11-02 2001-11-02 熱処理装置及び熱処理方法
PCT/JP2002/007974 WO2003015149A1 (fr) 2001-08-08 2002-08-05 Procede et dispositif de traitement thermique

Publications (1)

Publication Number Publication Date
DE60239683D1 true DE60239683D1 (de) 2011-05-19

Family

ID=26620144

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239683T Expired - Lifetime DE60239683D1 (de) 2001-08-08 2002-08-05 Wärmebehandlungsverfahren und wärmebehandslungseinrichtung

Country Status (7)

Country Link
US (1) US6975917B2 (de)
EP (1) EP1416523B1 (de)
KR (1) KR100809768B1 (de)
CN (1) CN1298028C (de)
DE (1) DE60239683D1 (de)
TW (1) TW557511B (de)
WO (1) WO2003015149A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4455225B2 (ja) * 2004-08-25 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
KR100860437B1 (ko) * 2004-10-07 2008-09-25 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 디바이스의 제조 방법
KR100596506B1 (ko) * 2005-06-03 2006-07-04 삼성전자주식회사 배치 타입의 반도체 설비 제어 방법
US7444534B2 (en) * 2006-01-25 2008-10-28 International Business Machines Corporation Method and apparatus for dividing a digital signal by X.5 in an information handling system
KR100772846B1 (ko) * 2006-08-30 2007-11-02 삼성전자주식회사 반도체 소자 제조를 위한 종형 확산로의 웨이퍼 검출장치와방법
US7515986B2 (en) * 2007-04-20 2009-04-07 The Boeing Company Methods and systems for controlling and adjusting heat distribution over a part bed
JP4676567B1 (ja) * 2010-07-20 2011-04-27 三井造船株式会社 半導体基板熱処理装置
US8809206B2 (en) * 2011-02-07 2014-08-19 Spansion Llc Patterned dummy wafers loading in batch type CVD
JP5774532B2 (ja) * 2012-03-28 2015-09-09 東京エレクトロン株式会社 連続処理システム、連続処理方法、及び、プログラム
JP6301083B2 (ja) * 2012-09-12 2018-03-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、及びレシピの作成方法
CN103646861A (zh) * 2013-11-28 2014-03-19 上海华力微电子有限公司 消除炉管负载效应的半导体制造方法
CN103792971B (zh) * 2014-02-20 2017-03-01 北京七星华创电子股份有限公司 一种用于半导体热处理设备的温度控制等效方法
JP6280407B2 (ja) * 2014-03-19 2018-02-14 東京エレクトロン株式会社 基板処理方法、プログラム、制御装置、基板処理装置及び基板処理システム
KR102052435B1 (ko) * 2016-03-31 2019-12-05 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 장전 방법 및 기록 매체
KR102384558B1 (ko) * 2017-09-27 2022-04-08 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
CN109950187B (zh) 2017-12-20 2024-04-12 株式会社国际电气 基板处理装置、半导体装置的制造方法以及记录介质
US11393703B2 (en) * 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
JP7288745B2 (ja) * 2018-09-13 2023-06-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN213304067U (zh) * 2021-03-22 2021-05-28 台湾积体电路制造股份有限公司 半导体扩散设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105357B2 (ja) * 1989-01-28 1995-11-13 国際電気株式会社 縦型ｃｖｄ拡散装置に於けるウェーハ移載方法及び装置
JP3507587B2 (ja) * 1995-06-09 2004-03-15 東京エレクトロン株式会社 熱処理装置
US5942012A (en) * 1995-06-09 1999-08-24 Tokyo Electron Limited Heat treatment apparatus
JPH10189465A (ja) 1996-12-26 1998-07-21 Dainippon Screen Mfg Co Ltd 基板の熱処理装置およびそれを備える薄膜形成装置
JP3883636B2 (ja) * 1997-03-06 2007-02-21 株式会社日立国際電気 半導体製造装置
JP4232307B2 (ja) * 1999-03-23 2009-03-04 東京エレクトロン株式会社 バッチ式熱処理装置の運用方法
JP3244492B2 (ja) * 1999-05-26 2002-01-07 株式会社日立国際電気 縦型ｃｖｄ装置
JP2001144019A (ja) * 1999-11-10 2001-05-25 Tokyo Electron Ltd バッチ式熱処理装置
JP3497450B2 (ja) * 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法

Also Published As

Publication number Publication date
US20040238519A1 (en) 2004-12-02
KR100809768B1 (ko) 2008-03-04
CN1298028C (zh) 2007-01-31
KR20040019386A (ko) 2004-03-05
EP1416523B1 (de) 2011-04-06
EP1416523A4 (de) 2006-03-22
EP1416523A1 (de) 2004-05-06
TW557511B (en) 2003-10-11
WO2003015149A1 (fr) 2003-02-20
US6975917B2 (en) 2005-12-13
CN1565050A (zh) 2005-01-12

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