DE60236436D1 - Einzelelektrontransistoren und verfahren zur herstellung - Google Patents

Einzelelektrontransistoren und verfahren zur herstellung

Info

Publication number
DE60236436D1
DE60236436D1 DE60236436T DE60236436T DE60236436D1 DE 60236436 D1 DE60236436 D1 DE 60236436D1 DE 60236436 T DE60236436 T DE 60236436T DE 60236436 T DE60236436 T DE 60236436T DE 60236436 D1 DE60236436 D1 DE 60236436D1
Authority
DE
Germany
Prior art keywords
insulating layer
electrode
nanoparticle
electrodes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60236436T
Other languages
German (de)
English (en)
Inventor
Louis C Brousseau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Application granted granted Critical
Publication of DE60236436D1 publication Critical patent/DE60236436D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60236436T 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung Expired - Fee Related DE60236436D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

Publications (1)

Publication Number Publication Date
DE60236436D1 true DE60236436D1 (de) 2010-07-01

Family

ID=25420626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236436T Expired - Fee Related DE60236436D1 (de) 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung

Country Status (8)

Country Link
US (2) US6483125B1 (enExample)
EP (1) EP1407492B1 (enExample)
JP (1) JP4814487B2 (enExample)
AT (1) ATE468611T1 (enExample)
AU (1) AU2002322459A1 (enExample)
DE (1) DE60236436D1 (enExample)
TW (1) TW557546B (enExample)
WO (1) WO2003007384A2 (enExample)

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US7335594B1 (en) 2005-04-27 2008-02-26 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
US7378310B1 (en) 2005-04-27 2008-05-27 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
US20070202648A1 (en) * 2006-02-28 2007-08-30 Samsung Electronics Co. Ltd. Memory device and method of manufacturing the same
CN101965631B (zh) * 2008-02-11 2012-12-05 库克有限公司 电子或空穴自旋的控制和读出
CN105717176A (zh) * 2008-09-02 2016-06-29 多伦多大学董事局 纳米结构的微电极以及集成所述微电极的生物传感器件
CN108027335B (zh) 2015-06-25 2021-05-04 罗斯韦尔生物技术股份有限公司 生物分子传感器和方法
US11624725B2 (en) 2016-01-28 2023-04-11 Roswell Blotechnologies, Inc. Methods and apparatus for measuring analytes using polymerase in large scale molecular electronics sensor arrays
EP3408219B1 (en) 2016-01-28 2022-08-17 Roswell Biotechnologies, Inc Massively parallel dna sequencing apparatus
EP3882616A1 (en) 2016-02-09 2021-09-22 Roswell Biotechnologies, Inc Electronic label-free dna and genome sequencing
US10597767B2 (en) 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US9829456B1 (en) 2016-07-26 2017-11-28 Roswell Biotechnologies, Inc. Method of making a multi-electrode structure usable in molecular sensing devices
US10902939B2 (en) 2017-01-10 2021-01-26 Roswell Biotechnologies, Inc. Methods and systems for DNA data storage
WO2018136148A1 (en) 2017-01-19 2018-07-26 Roswell Biotechnologies, Inc. Solid state sequencing devices comprising two dimensional layer materials
EP3615685B1 (en) 2017-04-25 2025-02-19 Roswell Biotechnologies, Inc Enzymatic circuits for molecular sensors
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
EP3622086A4 (en) 2017-05-09 2021-04-21 Roswell Biotechnologies, Inc LINK PROBE CIRCUITS FOR MOLECULAR SENSORS
CN111373049A (zh) 2017-08-30 2020-07-03 罗斯威尔生命技术公司 用于dna数据存储的进行性酶分子电子传感器
CN111373051A (zh) 2017-10-10 2020-07-03 罗斯威尔生命技术公司 用于无扩增dna数据存储的方法、装置和系统
CN113994013A (zh) 2019-04-12 2022-01-28 罗斯威尔生命技术公司 用于分子电子学传感器的多环芳族桥
US12146852B2 (en) 2019-09-06 2024-11-19 Roswell Biotechnologies, Inc. Methods of fabricating nanoscale structures usable in molecular sensors and other devices

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Also Published As

Publication number Publication date
TW557546B (en) 2003-10-11
ATE468611T1 (de) 2010-06-15
EP1407492B1 (en) 2010-05-19
JP4814487B2 (ja) 2011-11-16
WO2003007384A2 (en) 2003-01-23
WO2003007384A3 (en) 2003-05-08
JP2005526371A (ja) 2005-09-02
AU2002322459A1 (en) 2003-01-29
US6483125B1 (en) 2002-11-19
EP1407492A2 (en) 2004-04-14
US6784082B2 (en) 2004-08-31
US20030025133A1 (en) 2003-02-06

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee