JP4814487B2 - 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 - Google Patents

絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 Download PDF

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JP4814487B2
JP4814487B2 JP2003513046A JP2003513046A JP4814487B2 JP 4814487 B2 JP4814487 B2 JP 4814487B2 JP 2003513046 A JP2003513046 A JP 2003513046A JP 2003513046 A JP2003513046 A JP 2003513046A JP 4814487 B2 JP4814487 B2 JP 4814487B2
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electrode
insulating layer
face
single electron
electron transistor
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JP2005526371A (ja
JP2005526371A5 (enExample
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ブラウシュー，ルイス・シー，ザ・サード
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ノース・キャロライナ・ステイト・ユニヴァーシティ
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2003513046A 2001-07-13 2002-07-12 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 Expired - Fee Related JP4814487B2 (ja)

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Application Number Priority Date Filing Date Title
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
US09/905,319 2001-07-13
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

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JP2005526371A JP2005526371A (ja) 2005-09-02
JP2005526371A5 JP2005526371A5 (enExample) 2010-02-12
JP4814487B2 true JP4814487B2 (ja) 2011-11-16

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US (2) US6483125B1 (enExample)
EP (1) EP1407492B1 (enExample)
JP (1) JP4814487B2 (enExample)
AT (1) ATE468611T1 (enExample)
AU (1) AU2002322459A1 (enExample)
DE (1) DE60236436D1 (enExample)
TW (1) TW557546B (enExample)
WO (1) WO2003007384A2 (enExample)

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JP4297106B2 (ja) * 2005-02-23 2009-07-15 セイコーエプソン株式会社 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
US7309650B1 (en) 2005-02-24 2007-12-18 Spansion Llc Memory device having a nanocrystal charge storage region and method
US7378310B1 (en) 2005-04-27 2008-05-27 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
US7335594B1 (en) 2005-04-27 2008-02-26 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
US20070202648A1 (en) * 2006-02-28 2007-08-30 Samsung Electronics Co. Ltd. Memory device and method of manufacturing the same
US8507894B2 (en) * 2008-02-11 2013-08-13 Qucor Pty Limited Control and readout of electron or hole spin
WO2010025547A1 (en) * 2008-09-02 2010-03-11 The Governing Council Of The University Of Toronto Nanostructured microelectrodes and biosensing devices incorporating the same
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EP4137808A1 (en) 2016-01-28 2023-02-22 Roswell Biotechnologies, Inc. Method of making a sequencing device
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KR102734671B1 (ko) 2016-02-09 2024-11-25 로스웰 엠이 아이엔씨. 전자 비표지 dna 및 게놈 시퀀싱
US10597767B2 (en) 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US9829456B1 (en) * 2016-07-26 2017-11-28 Roswell Biotechnologies, Inc. Method of making a multi-electrode structure usable in molecular sensing devices
CA3052062A1 (en) 2017-01-10 2018-07-19 Roswell Biotechnologies, Inc. Methods and systems for dna data storage
WO2018136148A1 (en) 2017-01-19 2018-07-26 Roswell Biotechnologies, Inc. Solid state sequencing devices comprising two dimensional layer materials
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
EP3615685B1 (en) 2017-04-25 2025-02-19 Roswell Biotechnologies, Inc Enzymatic circuits for molecular sensors
CA3057155A1 (en) 2017-05-09 2018-11-15 Roswell Biotechnologies, Inc. Binding probe circuits for molecular sensors
US11371955B2 (en) 2017-08-30 2022-06-28 Roswell Biotechnologies, Inc. Processive enzyme molecular electronic sensors for DNA data storage
CN111373051A (zh) 2017-10-10 2020-07-03 罗斯威尔生命技术公司 用于无扩增dna数据存储的方法、装置和系统
US12146852B2 (en) 2019-09-06 2024-11-19 Roswell Biotechnologies, Inc. Methods of fabricating nanoscale structures usable in molecular sensors and other devices

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JP2000349275A (ja) * 1999-06-01 2000-12-15 Nec Corp 単一電子素子とその製造方法
WO2001013432A1 (en) * 1999-08-18 2001-02-22 North Carolina State University Sensing devices using chemically-gated single electron transistors

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Also Published As

Publication number Publication date
US20030025133A1 (en) 2003-02-06
JP2005526371A (ja) 2005-09-02
AU2002322459A1 (en) 2003-01-29
US6784082B2 (en) 2004-08-31
ATE468611T1 (de) 2010-06-15
WO2003007384A2 (en) 2003-01-23
EP1407492A2 (en) 2004-04-14
US6483125B1 (en) 2002-11-19
DE60236436D1 (de) 2010-07-01
TW557546B (en) 2003-10-11
WO2003007384A3 (en) 2003-05-08
EP1407492B1 (en) 2010-05-19

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