DE60235306D1 - Verfahren zur herstellung von kolloidale nanokrist - Google Patents

Verfahren zur herstellung von kolloidale nanokrist

Info

Publication number
DE60235306D1
DE60235306D1 DE60235306T DE60235306T DE60235306D1 DE 60235306 D1 DE60235306 D1 DE 60235306D1 DE 60235306 T DE60235306 T DE 60235306T DE 60235306 T DE60235306 T DE 60235306T DE 60235306 D1 DE60235306 D1 DE 60235306D1
Authority
DE
Germany
Prior art keywords
methods
substantially monodisperse
colloidal nanocrystals
nanoclist
colloidal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235306T
Other languages
German (de)
English (en)
Inventor
Xiaogang Peng
Weiyong Yu
David Battaglia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Arkansas
Original Assignee
University of Arkansas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23194989&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60235306(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by University of Arkansas filed Critical University of Arkansas
Application granted granted Critical
Publication of DE60235306D1 publication Critical patent/DE60235306D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
    • G01N15/02—Investigating particle size or size distribution
    • G01N15/0205—Investigating particle size or size distribution by optical means, e.g. by light scattering, diffraction, holography or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
    • G01N2015/0038—Investigating nanoparticles
DE60235306T 2001-07-30 2002-07-30 Verfahren zur herstellung von kolloidale nanokrist Expired - Lifetime DE60235306D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30868901P 2001-07-30 2001-07-30
PCT/US2002/024215 WO2003050329A2 (en) 2001-07-30 2002-07-30 High quality colloidal nanocrystals and methods of preparation of the same in non-coordinating solvents

Publications (1)

Publication Number Publication Date
DE60235306D1 true DE60235306D1 (de) 2010-03-25

Family

ID=23194989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235306T Expired - Lifetime DE60235306D1 (de) 2001-07-30 2002-07-30 Verfahren zur herstellung von kolloidale nanokrist

Country Status (8)

Country Link
US (1) US7105051B2 (en29)
EP (1) EP1412563B1 (en29)
JP (1) JP4344613B2 (en29)
AT (1) ATE457373T1 (en29)
AU (1) AU2002365069A1 (en29)
CA (1) CA2454355C (en29)
DE (1) DE60235306D1 (en29)
WO (1) WO2003050329A2 (en29)

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KR20200122717A (ko) 2019-04-18 2020-10-28 삼성전자주식회사 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자
KR20200122719A (ko) 2019-04-18 2020-10-28 삼성전자주식회사 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자
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Also Published As

Publication number Publication date
CA2454355A1 (en) 2003-06-19
EP1412563A4 (en) 2007-08-22
US7105051B2 (en) 2006-09-12
AU2002365069A1 (en) 2003-06-23
EP1412563B1 (en) 2010-02-10
JP4344613B2 (ja) 2009-10-14
CA2454355C (en) 2011-05-10
AU2002365069A8 (en) 2003-06-23
EP1412563A2 (en) 2004-04-28
WO2003050329A2 (en) 2003-06-19
WO2003050329A3 (en) 2003-09-12
ATE457373T1 (de) 2010-02-15
US20060130741A1 (en) 2006-06-22
JP2005521755A (ja) 2005-07-21

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