CA2454355C - High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents - Google Patents
High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents Download PDFInfo
- Publication number
- CA2454355C CA2454355C CA2454355A CA2454355A CA2454355C CA 2454355 C CA2454355 C CA 2454355C CA 2454355 A CA2454355 A CA 2454355A CA 2454355 A CA2454355 A CA 2454355A CA 2454355 C CA2454355 C CA 2454355C
- Authority
- CA
- Canada
- Prior art keywords
- nanocrystals
- metal
- ligand
- cation
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means, e.g. by light scattering, diffraction, holography or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N2015/0038—Investigating nanoparticles
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30868901P | 2001-07-30 | 2001-07-30 | |
US60/308,689 | 2001-07-30 | ||
PCT/US2002/024215 WO2003050329A2 (en) | 2001-07-30 | 2002-07-30 | High quality colloidal nanocrystals and methods of preparation of the same in non-coordinating solvents |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2454355A1 CA2454355A1 (en) | 2003-06-19 |
CA2454355C true CA2454355C (en) | 2011-05-10 |
Family
ID=23194989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2454355A Expired - Fee Related CA2454355C (en) | 2001-07-30 | 2002-07-30 | High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents |
Country Status (8)
Country | Link |
---|---|
US (1) | US7105051B2 (en29) |
EP (1) | EP1412563B1 (en29) |
JP (1) | JP4344613B2 (en29) |
AT (1) | ATE457373T1 (en29) |
AU (1) | AU2002365069A1 (en29) |
CA (1) | CA2454355C (en29) |
DE (1) | DE60235306D1 (en29) |
WO (1) | WO2003050329A2 (en29) |
Families Citing this family (87)
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KR100657891B1 (ko) * | 2003-07-19 | 2006-12-14 | 삼성전자주식회사 | 반도체 나노결정 및 그 제조방법 |
KR100697511B1 (ko) | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
US7253452B2 (en) * | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
WO2006073416A1 (en) * | 2004-03-30 | 2006-07-13 | University Of Florida Research Foundation, Inc. | Rare earth oxide nanocrystals and methods of forming |
GB0409877D0 (en) * | 2004-04-30 | 2004-06-09 | Univ Manchester | Preparation of nanoparticle materials |
US7850943B2 (en) | 2004-05-28 | 2010-12-14 | Samsung Electronics Co., Ltd. | Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method |
KR100621308B1 (ko) | 2004-05-28 | 2006-09-14 | 삼성전자주식회사 | 다중 파장에서 발광하는 황화 카드뮴 나노 결정의 제조방법 및 그에 의해 수득된 황화 카드뮴 나노 결정 |
TWI237314B (en) * | 2004-06-24 | 2005-08-01 | Ind Tech Res Inst | Doping method for forming quantum dots |
JP5136877B2 (ja) * | 2004-07-16 | 2013-02-06 | 独立行政法人産業技術総合研究所 | 蛍光体、及びその製造方法 |
US8454927B2 (en) * | 2004-08-04 | 2013-06-04 | Crystalplex Corporation | Alloyed semiconductor nanocrystals |
DE112006001067T5 (de) * | 2005-04-25 | 2008-03-13 | Board Of Trustees Of The University Of Arkansas | Dotierte Halbleiter-Nanokristalle und Verfahren zu deren Herstellung |
CN100526420C (zh) * | 2005-05-18 | 2009-08-12 | 中国科学院长春光学精密机械与物理研究所 | 低毒性ZnSe蓝紫光量子点的制备方法 |
US9297092B2 (en) | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US8845927B2 (en) | 2006-06-02 | 2014-09-30 | Qd Vision, Inc. | Functionalized nanoparticles and method |
GB2472542B (en) | 2005-08-12 | 2011-03-23 | Nanoco Technologies Ltd | Nanoparticles |
GB0522027D0 (en) * | 2005-10-28 | 2005-12-07 | Nanoco Technologies Ltd | Controlled preparation of nanoparticle materials |
JP2007169605A (ja) * | 2005-11-24 | 2007-07-05 | National Institute Of Advanced Industrial & Technology | 蛍光体、及びその製造方法 |
US8849087B2 (en) | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9212056B2 (en) | 2006-06-02 | 2015-12-15 | Qd Vision, Inc. | Nanoparticle including multi-functional ligand and method |
US7850777B2 (en) * | 2006-06-15 | 2010-12-14 | Evident Technologies | Method of preparing semiconductor nanocrystal compositions |
WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
WO2008133660A2 (en) | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063658A2 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US8563348B2 (en) * | 2007-04-18 | 2013-10-22 | Nanoco Technologies Ltd. | Fabrication of electrically active films based on multiple layers |
US20080264479A1 (en) | 2007-04-25 | 2008-10-30 | Nanoco Technologies Limited | Hybrid Photovoltaic Cells and Related Methods |
KR100853087B1 (ko) * | 2007-04-26 | 2008-08-19 | 삼성전자주식회사 | 나노결정, 그의 제조방법 및 그를 포함하는 전자소자 |
US8784701B2 (en) * | 2007-11-30 | 2014-07-22 | Nanoco Technologies Ltd. | Preparation of nanoparticle material |
JP5749495B2 (ja) | 2008-02-25 | 2015-07-15 | ナノコ テクノロジーズ リミテッド | 半導体ナノ粒子キャッピング剤 |
KR101995369B1 (ko) | 2008-04-03 | 2019-07-02 | 삼성 리서치 아메리카 인코포레이티드 | 양자점들을 포함하는 발광 소자 |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US7845825B2 (en) * | 2009-12-02 | 2010-12-07 | Abl Ip Holding Llc | Light fixture using near UV solid state device and remote semiconductor nanophosphors to produce white light |
US8021008B2 (en) * | 2008-05-27 | 2011-09-20 | Abl Ip Holding Llc | Solid state lighting using quantum dots in a liquid |
US8028537B2 (en) | 2009-05-01 | 2011-10-04 | Abl Ip Holding Llc | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
US8212469B2 (en) | 2010-02-01 | 2012-07-03 | Abl Ip Holding Llc | Lamp using solid state source and doped semiconductor nanophosphor |
US7980728B2 (en) * | 2008-05-27 | 2011-07-19 | Abl Ip Holding Llc | Solid state lighting using light transmissive solid in or forming optical integrating volume |
US8172424B2 (en) * | 2009-05-01 | 2012-05-08 | Abl Ip Holding Llc | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
CN102105554A (zh) * | 2008-06-10 | 2011-06-22 | 阿肯色大学托管委员会 | 砷化铟纳米晶体及其制备方法 |
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RU2381304C1 (ru) | 2008-08-21 | 2010-02-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт прикладной акустики" | Способ синтеза полупроводниковых квантовых точек |
EP2163301A3 (en) * | 2008-09-11 | 2010-04-28 | Centre National De La Recherche Scientifique (Cnrs) | Process for manufacturing colloidal materials, colloidal materials and their uses |
US9963633B2 (en) | 2008-09-11 | 2018-05-08 | Nexdot | Process for manufacturing colloidal materials, colloidal materials and their uses |
GB0820101D0 (en) * | 2008-11-04 | 2008-12-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
GB0821122D0 (en) * | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
KR101480511B1 (ko) * | 2008-12-19 | 2015-01-08 | 삼성전자 주식회사 | 금속-계면활성제층으로 코팅된 나노 결정의 제조 방법 |
KR101462658B1 (ko) * | 2008-12-19 | 2014-11-17 | 삼성전자 주식회사 | 반도체 나노 결정 및 그 제조 방법 |
CN101476162B (zh) * | 2008-12-24 | 2011-05-11 | 云南大学 | 一种花形ZnSe半导体纳米晶的合成方法 |
JP5698679B2 (ja) | 2009-01-16 | 2015-04-08 | ユニバーシティ・オブ・ユタ・リサーチ・ファウンデイション | コロイドナノ結晶の低温合成 |
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US8012448B2 (en) | 2009-07-13 | 2011-09-06 | University Of Southern California | Synthesis of metal chalcogenide nanocrystals using organodichalcogenide reagents |
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US9719012B2 (en) * | 2010-02-01 | 2017-08-01 | Abl Ip Holding Llc | Tubular lighting products using solid state source and semiconductor nanophosphor, E.G. for florescent tube replacement |
WO2011100023A1 (en) | 2010-02-10 | 2011-08-18 | Qd Vision, Inc. | Semiconductor nanocrystals and methods of preparation |
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US8089207B2 (en) * | 2010-05-10 | 2012-01-03 | Abl Ip Holding Llc | Lighting using solid state device and phosphors to produce light approximating a black body radiation spectrum |
WO2011140700A1 (zh) * | 2010-05-11 | 2011-11-17 | 海洋王照明科技股份有限公司 | 硒化铅量子点的制备方法 |
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WO2012094664A2 (en) * | 2011-01-07 | 2012-07-12 | The Board Of Trustees Of The University Of Arkansas | Colloidal semiconductor nanocrystals having 1-dimensional quantum confinement and methods of making the same |
US8461752B2 (en) * | 2011-03-18 | 2013-06-11 | Abl Ip Holding Llc | White light lamp using semiconductor light emitter(s) and remotely deployed phosphor(s) |
US8803412B2 (en) * | 2011-03-18 | 2014-08-12 | Abl Ip Holding Llc | Semiconductor lamp |
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WO2013173409A1 (en) | 2012-05-15 | 2013-11-21 | Qd Vision, Inc. | Semiconductor nanocrystals and methods of preparation |
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US11746290B2 (en) | 2013-09-26 | 2023-09-05 | Samsung Electronics Co., Ltd. | Nanocrystal particles and processes for synthesizing the same |
KR101510855B1 (ko) | 2014-08-22 | 2015-04-09 | 삼성전자 주식회사 | 몰드프레임 및 광학 시트와 이를 포함하는 백라이트 유닛 및 액정 표시 장치 |
RU2607405C2 (ru) * | 2015-03-06 | 2017-01-10 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" | Способ синтеза наночастиц полупроводников |
CN104845622A (zh) * | 2015-04-22 | 2015-08-19 | 桂林理工大学 | 一种蓖麻油酸制备六方相上转换纳米材料的方法 |
EP3168278B2 (en) | 2015-10-28 | 2022-02-09 | Samsung Electronics Co., Ltd. | Quantum dots, production methods thereof, and electronic devices including the same |
KR102498798B1 (ko) | 2015-12-22 | 2023-02-09 | 삼성전자주식회사 | 양자점 및 이를 포함하는 소자 |
KR102653473B1 (ko) | 2015-12-29 | 2024-04-01 | 삼성전자주식회사 | 양자점을 포함하는 전자 소자 |
EP3336158B1 (en) | 2016-12-14 | 2023-03-08 | Samsung Electronics Co., Ltd. | Emissive nanocrystal particle, method of preparing the same and device including emissive nanocrystal particle |
JP6709328B2 (ja) | 2017-03-28 | 2020-06-10 | 富士フイルム株式会社 | Iii−v族半導体ナノ粒子の製造方法、iii−v族半導体量子ドットの製造方法、及びフロー式反応システム |
KR20200122717A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR20200122719A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR102652436B1 (ko) | 2019-04-18 | 2024-03-27 | 삼성전자주식회사 | ZnTeSe 기반의 양자점 |
US11603493B2 (en) | 2019-10-17 | 2023-03-14 | Samsung Electronics Co., Ltd. | Core shell quantum dot, production method thereof, and electronic device including the same |
CN112680211A (zh) | 2019-10-17 | 2021-04-20 | 三星电子株式会社 | 芯壳量子点、其制造方法、量子点群、量子点复合物、量子点组合物和显示器件 |
CN115818582A (zh) * | 2021-09-16 | 2023-03-21 | 浙江大学 | 前驱体组合物及其制备方法、无机纳米晶的制备方法 |
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US5505928A (en) * | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
US5559057A (en) * | 1994-03-24 | 1996-09-24 | Starfire Electgronic Development & Marketing Ltd. | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors |
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US6322901B1 (en) * | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
WO2000017655A1 (en) * | 1998-09-18 | 2000-03-30 | Massachusetts Institute Of Technology | Water-soluble fluorescent semiconductor nanocrystals |
US6179912B1 (en) * | 1999-12-20 | 2001-01-30 | Biocrystal Ltd. | Continuous flow process for production of semiconductor nanocrystals |
US6645444B2 (en) * | 2001-06-29 | 2003-11-11 | Nanospin Solutions | Metal nanocrystals and synthesis thereof |
WO2003030227A2 (en) * | 2001-10-02 | 2003-04-10 | Quantum Dot Corporation | Method of semiconductor nanoparticle synthesis |
US6623559B2 (en) * | 2001-12-10 | 2003-09-23 | Nanotek Instruments, Inc. | Method for the production of semiconductor quantum particles |
-
2002
- 2002-07-30 EP EP02802917A patent/EP1412563B1/en not_active Expired - Lifetime
- 2002-07-30 US US10/209,329 patent/US7105051B2/en not_active Expired - Lifetime
- 2002-07-30 CA CA2454355A patent/CA2454355C/en not_active Expired - Fee Related
- 2002-07-30 JP JP2003551344A patent/JP4344613B2/ja not_active Expired - Fee Related
- 2002-07-30 AU AU2002365069A patent/AU2002365069A1/en not_active Abandoned
- 2002-07-30 AT AT02802917T patent/ATE457373T1/de not_active IP Right Cessation
- 2002-07-30 DE DE60235306T patent/DE60235306D1/de not_active Expired - Lifetime
- 2002-07-30 WO PCT/US2002/024215 patent/WO2003050329A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
DE60235306D1 (de) | 2010-03-25 |
CA2454355A1 (en) | 2003-06-19 |
EP1412563A4 (en) | 2007-08-22 |
US7105051B2 (en) | 2006-09-12 |
AU2002365069A1 (en) | 2003-06-23 |
EP1412563B1 (en) | 2010-02-10 |
JP4344613B2 (ja) | 2009-10-14 |
AU2002365069A8 (en) | 2003-06-23 |
EP1412563A2 (en) | 2004-04-28 |
WO2003050329A2 (en) | 2003-06-19 |
WO2003050329A3 (en) | 2003-09-12 |
ATE457373T1 (de) | 2010-02-15 |
US20060130741A1 (en) | 2006-06-22 |
JP2005521755A (ja) | 2005-07-21 |
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