DE60225768D1 - LDMOS-Feldeffekttransistoren - Google Patents

LDMOS-Feldeffekttransistoren

Info

Publication number
DE60225768D1
DE60225768D1 DE60225768T DE60225768T DE60225768D1 DE 60225768 D1 DE60225768 D1 DE 60225768D1 DE 60225768 T DE60225768 T DE 60225768T DE 60225768 T DE60225768 T DE 60225768T DE 60225768 D1 DE60225768 D1 DE 60225768D1
Authority
DE
Germany
Prior art keywords
ldmos fets
ldmos
fets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60225768T
Other languages
English (en)
Other versions
DE60225768T2 (de
Inventor
Hideaki Tsuchiko
Bruce Lee Inn
Marty Garnett
Philip Fischer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Micrel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micrel Inc filed Critical Micrel Inc
Application granted granted Critical
Publication of DE60225768D1 publication Critical patent/DE60225768D1/de
Publication of DE60225768T2 publication Critical patent/DE60225768T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
DE60225768T 2001-08-23 2002-08-21 LDMOS-Feldeffekttransistoren Expired - Lifetime DE60225768T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/938,425 US6593621B2 (en) 2001-08-23 2001-08-23 LDMOS field effect transistor with improved ruggedness in narrow curved areas
US938425 2001-08-23

Publications (2)

Publication Number Publication Date
DE60225768D1 true DE60225768D1 (de) 2008-05-08
DE60225768T2 DE60225768T2 (de) 2008-07-24

Family

ID=25471416

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60225768T Expired - Lifetime DE60225768T2 (de) 2001-08-23 2002-08-21 LDMOS-Feldeffekttransistoren

Country Status (3)

Country Link
US (1) US6593621B2 (de)
EP (1) EP1286399B1 (de)
DE (1) DE60225768T2 (de)

Families Citing this family (74)

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US6924531B2 (en) * 2003-10-01 2005-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. LDMOS device with isolation guard rings
US7091556B2 (en) * 2003-12-24 2006-08-15 Texas Instruments Incorporated High voltage drain-extended transistor
US7304354B2 (en) * 2004-02-17 2007-12-04 Silicon Space Technology Corp. Buried guard ring and radiation hardened isolation structures and fabrication methods
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US7315067B2 (en) * 2004-07-02 2008-01-01 Impinj, Inc. Native high-voltage n-channel LDMOSFET in standard logic CMOS
US7145203B2 (en) * 2004-04-26 2006-12-05 Impinj, Inc. Graded-junction high-voltage MOSFET in standard logic CMOS
US8264039B2 (en) * 2004-04-26 2012-09-11 Synopsys, Inc. High-voltage LDMOSFET and applications therefor in standard CMOS
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DE102005060521A1 (de) * 2005-12-09 2007-06-14 Atmel Germany Gmbh DMOS-Transistor mit optimierter Randstruktur
CN100438032C (zh) * 2006-02-22 2008-11-26 崇贸科技股份有限公司 具有辐射结构和隔离效果的高电压和低导通电阻晶体管
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US7829945B2 (en) * 2007-10-26 2010-11-09 International Business Machines Corporation Lateral diffusion field effect transistor with asymmetric gate dielectric profile
US7598588B2 (en) * 2007-10-26 2009-10-06 Hvvi Semiconductors, Inc Semiconductor structure and method of manufacture
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US7999318B2 (en) 2007-12-28 2011-08-16 Volterra Semiconductor Corporation Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the same
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US7851314B2 (en) * 2008-04-30 2010-12-14 Alpha And Omega Semiconductor Incorporated Short channel lateral MOSFET and method
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JP5525736B2 (ja) * 2009-02-18 2014-06-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
JP2010278312A (ja) * 2009-05-29 2010-12-09 Sanyo Electric Co Ltd 半導体装置
US20110079849A1 (en) * 2009-10-06 2011-04-07 Ting-Zhou Yan Lateral-diffusion metal-oxide-semiconductor device
US20110146181A1 (en) * 2009-12-07 2011-06-23 Steven Traulsen Prefabricated reinforced concrete panel curtain-wall system
US8319255B2 (en) * 2010-04-01 2012-11-27 Texas Instruments Incorporated Low side Zener reference voltage extended drain SCR clamps
TWI500147B (zh) * 2010-08-26 2015-09-11 United Microelectronics Corp 橫向擴散金氧半導體元件
US9893209B2 (en) * 2010-12-02 2018-02-13 Alpha And Omega Semiconductor Incorporated Cascoded high voltage junction field effect transistor
US8803232B2 (en) 2011-05-29 2014-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
TWI469349B (zh) * 2011-07-14 2015-01-11 Richtek Technology Corp 高壓元件及其製造方法
CN102903752B (zh) * 2011-07-27 2015-03-25 立锜科技股份有限公司 高压元件及其制造方法
US8421150B2 (en) * 2011-08-03 2013-04-16 Richtek Technology Corporation R.O.C. High voltage device and manufacturing method thereof
CN102263034B (zh) * 2011-08-12 2013-06-05 杭州士兰集成电路有限公司 Bcd工艺中的高压mos晶体管结构及其制造方法
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
US8587058B2 (en) * 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
CN103208520B (zh) * 2012-01-13 2017-06-23 联华电子股份有限公司 横向扩散金属氧化半导体元件
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US9269704B2 (en) 2012-05-15 2016-02-23 Nuvoton Technology Corporation Semiconductor device with embedded silicon-controlled rectifier
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US9818831B2 (en) 2013-03-11 2017-11-14 Semiconductor Components Industreis, Llc DMOS transistor including a gate dielectric having a non-uniform thickness
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TWI703703B (zh) * 2018-12-20 2020-09-01 世界先進積體電路股份有限公司 靜電放電保護裝置
KR102233049B1 (ko) * 2019-07-24 2021-03-26 주식회사 키 파운드리 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법
KR102265031B1 (ko) * 2019-07-25 2021-06-14 주식회사 키 파운드리 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법
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Also Published As

Publication number Publication date
US20030038316A1 (en) 2003-02-27
DE60225768T2 (de) 2008-07-24
EP1286399B1 (de) 2008-03-26
US6593621B2 (en) 2003-07-15
EP1286399A2 (de) 2003-02-26
EP1286399A3 (de) 2004-03-03

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