DE60222044D1 - Nitrid-Feldeffekttransistor - Google Patents

Nitrid-Feldeffekttransistor

Info

Publication number
DE60222044D1
DE60222044D1 DE60222044T DE60222044T DE60222044D1 DE 60222044 D1 DE60222044 D1 DE 60222044D1 DE 60222044 T DE60222044 T DE 60222044T DE 60222044 T DE60222044 T DE 60222044T DE 60222044 D1 DE60222044 D1 DE 60222044D1
Authority
DE
Germany
Prior art keywords
nitride
field effect
effect transistor
type field
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60222044T
Other languages
English (en)
Other versions
DE60222044T2 (de
Inventor
Kaoru Inoue
Yoshito Ikeda
Hiroyuki Masato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60222044D1 publication Critical patent/DE60222044D1/de
Application granted granted Critical
Publication of DE60222044T2 publication Critical patent/DE60222044T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE60222044T 2001-03-27 2002-03-12 Nitrid-Feldeffekttransistor Expired - Lifetime DE60222044T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001090490 2001-03-27
JP2001090490A JP4220683B2 (ja) 2001-03-27 2001-03-27 半導体装置

Publications (2)

Publication Number Publication Date
DE60222044D1 true DE60222044D1 (de) 2007-10-11
DE60222044T2 DE60222044T2 (de) 2007-12-13

Family

ID=18945265

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60222044T Expired - Lifetime DE60222044T2 (de) 2001-03-27 2002-03-12 Nitrid-Feldeffekttransistor

Country Status (5)

Country Link
US (2) US6787820B2 (de)
EP (1) EP1246256B1 (de)
JP (1) JP4220683B2 (de)
CN (1) CN1240137C (de)
DE (1) DE60222044T2 (de)

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JP2008098674A (ja) * 2003-06-10 2008-04-24 Matsushita Electric Ind Co Ltd 半導体装置
JP4224423B2 (ja) * 2003-06-10 2009-02-12 パナソニック株式会社 半導体装置およびその製造方法
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
EP1665358B1 (de) 2003-09-09 2020-07-01 The Regents of The University of California Herstellung von einer einzelnen oder mehreren gate-feldplatten
US7649215B2 (en) * 2003-12-05 2010-01-19 International Rectifier Corporation III-nitride device passivation and method
US7279697B2 (en) * 2003-12-05 2007-10-09 International Rectifier Corporation Field effect transistor with enhanced insulator structure
EP1690286A4 (de) * 2003-12-05 2009-07-08 Int Rectifier Corp Feldeffekttransistor mit verbesserter isolatorstruktur
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
JP2005210105A (ja) * 2003-12-26 2005-08-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
US8193612B2 (en) * 2004-02-12 2012-06-05 International Rectifier Corporation Complimentary nitride transistors vertical and common drain
JP4889203B2 (ja) * 2004-04-21 2012-03-07 新日本無線株式会社 窒化物半導体装置及びその製造方法
JP4869563B2 (ja) 2004-04-21 2012-02-08 新日本無線株式会社 窒化物半導体装置及びその製造方法
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP4607506B2 (ja) * 2004-07-16 2011-01-05 株式会社東芝 半導体装置
JP2006086354A (ja) 2004-09-16 2006-03-30 Toshiba Corp 窒化物系半導体装置
US7525248B1 (en) 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
US7714359B2 (en) 2005-02-17 2010-05-11 Panasonic Corporation Field effect transistor having nitride semiconductor layer
JP2006261642A (ja) * 2005-02-17 2006-09-28 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP5093991B2 (ja) * 2005-03-31 2012-12-12 住友電工デバイス・イノベーション株式会社 半導体装置
US8272757B1 (en) 2005-06-03 2012-09-25 Ac Led Lighting, L.L.C. Light emitting diode lamp capable of high AC/DC voltage operation
JP2007142243A (ja) * 2005-11-21 2007-06-07 Matsushita Electric Ind Co Ltd 窒化物半導体電界効果トランジスタ及びその製造方法
CN101331599A (zh) * 2005-12-14 2008-12-24 日本电气株式会社 场效应晶体管
JP5163129B2 (ja) * 2006-02-10 2013-03-13 日本電気株式会社 半導体装置
JP5560519B2 (ja) * 2006-04-11 2014-07-30 日産自動車株式会社 半導体装置及びその製造方法
JP5272727B2 (ja) * 2006-05-08 2013-08-28 日本電気株式会社 半導体装置
JP5179023B2 (ja) * 2006-05-31 2013-04-10 パナソニック株式会社 電界効果トランジスタ
US7504679B2 (en) * 2006-07-20 2009-03-17 International Rectifier Corporation Enhancement mode GaN FET with piezoelectric gate
JP4282708B2 (ja) * 2006-10-20 2009-06-24 株式会社東芝 窒化物系半導体装置
US8283699B2 (en) * 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US7838904B2 (en) * 2007-01-31 2010-11-23 Panasonic Corporation Nitride based semiconductor device with concave gate region
JP5313457B2 (ja) * 2007-03-09 2013-10-09 パナソニック株式会社 窒化物半導体装置及びその製造方法
US7800116B2 (en) 2007-03-29 2010-09-21 Panasonic Corporation Group III-nitride semiconductor device with a cap layer
CN101295758B (zh) 2007-04-29 2013-03-06 晶能光电（江西）有限公司 含有碳基衬底的铟镓铝氮发光器件以及其制造方法
JP5298559B2 (ja) * 2007-06-29 2013-09-25 富士通株式会社 半導体装置及びその製造方法
JP2009206163A (ja) * 2008-02-26 2009-09-10 Oki Electric Ind Co Ltd ヘテロ接合型電界効果トランジスタ
CN102017193B (zh) * 2008-03-25 2012-05-30 晶能光电（江西）有限公司 具有双面钝化的半导体发光器件
JP5562579B2 (ja) * 2009-05-12 2014-07-30 日本碍子株式会社 半導体素子用エピタキシャル基板の作製方法
US8338860B2 (en) * 2009-10-30 2012-12-25 Alpha And Omega Semiconductor Incorporated Normally off gallium nitride field effect transistors (FET)
TWI420578B (zh) * 2010-01-14 2013-12-21 Great Power Semiconductor Corp 低閘極阻抗之溝槽式功率半導體結構及其製造方法
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
JP5712583B2 (ja) * 2010-12-02 2015-05-07 富士通株式会社 化合物半導体装置及びその製造方法
KR20120060303A (ko) * 2010-12-02 2012-06-12 엘지전자 주식회사 질화물 반도체 소자의 제조 방법 및 이에 의해 제조된 질화물 반도체 소자
JP5519547B2 (ja) * 2011-01-31 2014-06-11 日本碍子株式会社 トランジスタ素子
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
JP5796181B2 (ja) * 2012-05-22 2015-10-21 パナソニックＩｐマネジメント株式会社 窒化物半導体発光装置
US9608085B2 (en) * 2012-10-01 2017-03-28 Cree, Inc. Predisposed high electron mobility transistor
JP6343807B2 (ja) * 2012-12-20 2018-06-20 パナソニックＩｐマネジメント株式会社 電界効果トランジスタおよびその製造方法
JP6197344B2 (ja) * 2013-04-18 2017-09-20 住友電気工業株式会社 半導体装置
CN105229778B (zh) * 2013-06-06 2018-12-11 日本碍子株式会社 13族氮化物复合基板、半导体元件及13族氮化物复合基板的制造方法
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
JP2017041542A (ja) * 2015-08-20 2017-02-23 株式会社東芝 半導体装置
CN106876444B (zh) * 2017-03-03 2019-09-10 东南大学 基于多周期量子阱结构的hemt器件
CN108615756B (zh) * 2018-06-15 2024-06-14 苏州汉骅半导体有限公司 半导体器件

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JPH02202029A (ja) 1989-01-31 1990-08-10 Sony Corp 化合物半導体装置
JP2553760B2 (ja) * 1990-11-16 1996-11-13 住友電気工業株式会社 高電子移動度トランジスタ
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
WO2000065663A1 (fr) 1999-04-26 2000-11-02 Kansai Research Institute Transistor a heterostructure a effet de champ
JP3751791B2 (ja) * 2000-03-28 2006-03-01 日本電気株式会社 ヘテロ接合電界効果トランジスタ

Also Published As

Publication number Publication date
JP4220683B2 (ja) 2009-02-04
EP1246256B1 (de) 2007-08-29
US20050006664A1 (en) 2005-01-13
EP1246256A2 (de) 2002-10-02
CN1240137C (zh) 2006-02-01
US6787820B2 (en) 2004-09-07
JP2002289837A (ja) 2002-10-04
DE60222044T2 (de) 2007-12-13
EP1246256A3 (de) 2004-05-26
CN1377092A (zh) 2002-10-30
US20020139995A1 (en) 2002-10-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP